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One photon-per-bit receiver using near-noiseless phase-sensitive amplification

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Light(Science & Applications) 2020年第1期9卷 543-549页

作者： Ravikiran Kakarla Jochen Schroder Peter A.Andrekson Photonics Laboratory Department of Microtechnology and Nanoscience(MC2)Chalmers University of Technology412-96 GothenburgSweden

Space communication for deep-space missions,inter-satellite data transfer and Earth monitoring requires high-speed data *** reach is fundamentally dictated by the available transmission power,the aperture size,and the receiver sensitivity.A transition from radio-frequency links to optical links is now seriously being considered,as this greatly reduces the channel loss caused by diffraction.A widely studied approach uses power-efficient formats along with nanowire-based photon-counting receivers cooled to a few Kelvins operating at speeds below 1 Gb/***,to achieve the multi-Gb/s data rates that will be required in the future,systems relying on pre-amplified receivers together with advanced signal generation and processing techniques from fibre communications are also *** sensitivity of such systems is largely determined by the noise figure(NF)of the pre-amplifier,which is theoretically 3 dB for almost all ***-sensitive optical amplifiers(PSAs)with their uniquely low NF of 0 dB promise to provide the best possible sensitivity for Gb/s-rate long-haul free-space ***,we demonstrate a novel approach using a PSA-based receiver in a free-space transmission experiment with an unprecedented bit-error-free,black-box sensitivity of 1 photon-per-information-bit(PPB)at an information rate of 10.5 Gb/*** system adopts a simple modulation format(quadrature-phase-shift keying,QPSK),standard digital signal processing for signal recovery and forward-error correction and is straightforwardly scalable to higher data rates.

关键词： receiver amplifier noise

Application of UV depth lithography in micro system technology

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Optoelectronics Letters 2008年第1期4卷 1-4页

作者： Stephanus Büttgenbach Marco Feldmann Institute for microtechnology Technical University of Braunschweig Langer Kamp 8 38106 Braunschweig Germany

This letter reports on new types of photo resists allowing UV-light exposure of thick layers. Optimized processes Cthat for the positive resist AZ 9260 and the negative resist Epon SU-8 have been developed enabling the fabrication of high aspect ratio metallic and polymer micro components. The high potential of this technology will be demonstrated on the basis of two examples, a variable reluctance micro motor with compensated attractive force and an optical microphone developed for application in electro-magnetic interference environments.

关键词：微系统技术紫外线平版印刷术微电子学

Toward optical coherence tomography on a chip: in vivo three-dimensional human retinal imaging using photonic integrated circuit-based arrayed waveguide gratings

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Light(Science & Applications) 2021年第1期10卷 71-85页

作者： Elisabet A.Rank Ryan Sentosa Danielle J.Harper Matthias Salas Anna Gaugutz Dana Seyringer Stefan Nevlacsil Alejandro Maese-Novo Moritz Eggeling Paul Muellner Rainer Hainberger Martin Sagmeister Jochen Kraft Rainer ALeitgeb Wolfgang Drexler Center for Medical Physics and Biomedical Engineering Medical University of ViennaWaehringer Guertel 18-20/4 L1090 ViennaAustria research centre for microtechnology Vorarlberg University of Applied SciencesHochschulstrasse 16850 DornbirnAustria AIT Austrian Institute of Technology GmbH Gieffinggasse 41210 ViennaAustria ams AG Tobelbader Strasse 308141 PremstaettenAustria

In this work,we present a significant step toward in vivo ophthalmic optical coherence tomography and angiography on a photonic integrated *** diffraction gratings used in spectral-domain optical coherence tomography can be replaced by photonic integrated circuits comprising an arrayed waveguide *** arrayed waveguide grating designs with 256 channels were tested,which enabled the first chip-based optical coherence tomography and angiography in vivo three-dimensional human retinal *** 1 supports a bandwidth of 22nm,with which a sensitivity of up to 91 dB(830μW) and an axial resolution of 10.7 pm was *** 2 supports a bandwidth of 48 nm,with which a sensitivity of 90 dB(480μW) and an axial resolution of 6.5μm was *** silicon nitride-based integrated optical waveguides were fabricated with a fully CMOS-compatible process,which allows their monolithic co-integration on top of an optoelectronic silicon *** a benchmark for chip-based optical coherence tomography,tomograms generated by a commercially available clinical spectral-domain optical coherence tomography system were compared to those acquired with on-chip *** similarities in the tomograms demonstrate the significant clinical potential for further integration of optical coherence tomography on a chip system.

关键词： waveguide arrayed optical

Optical properties of InGaAsBi/GaAs strained quantum wells studied by temperature-dependent photoluminescence

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Chinese Physics B 2013年第3期22卷 508-511页

作者：顾溢张永刚宋禹忻叶虹曹远迎李爱珍王庶民 State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences Department of microtechnology and Nanoscience Chalmers University of TechnologyGothenburg SE-41296Sweden

The effect of bismuth on the optical properties of InGaAsBi/GaAs quantum well structures is investigated using the temperature-dependent photoluminescence from 12 K to 450 *** incorporation of bismuth in the InGaAsBi quantum well is confirmed and found to result in a red shift of photoluminescence wavelength of 27.3 meV at 300 *** photoluminescence intensity is significantly enhanced by about 50 times at 12 K with respect to that of the InGaAs quantum well due to the surfactant effect of *** temperature-dependent integrated photoluminescence intensities of the two samples reveal different behaviors related to various non-radiative recombination *** incorporation of bismuth also induces alloy non-uniformity in the quantum well,leading to an increased photoluminescence linewidth.

关键词： InGaAsBi strained quantum wells photoluminescence

Complex microstructure fabrication by integrating silicon anisotropic etching and UV-LIGA technology

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High Technology Letters 2007年第4期13卷 369-372页

作者：靖向萌 Chen Di Huang Chuang Chen Xiang Liu Jingquan Zhu Jun National Key Laboratory of Micro/Nano Fabrication Technology. Key Laboratory for Thin Films and microtechnology of Ministry of Education Research Institute of Micro/Nano Science and Technology Shanghai Jiaotong University Shanghai 200030 P.R. China

A fabrication method which integrates silicon anisotropic etching micromachining with UV-LIGA technology to make complex microstmetures is presented. This proposed combined process enables the fabrication of high-aspect-ratio and three-dimensional （3D） microstructures, which cannot be fabricated by silicon bulk mieromachining or UV-LIGA alone. To demonstrate this combined method, the 100μm thick SU-8 micro gears were fabricated on the silicon convex square structure, which is 100μm × 100μm× 80μm in dimension. In the subsequent micro hot embossing process, a novel type of plastics polyethylene terephtalate glycol （PETG） was tried for use. Through optimizing process parameters, PETG shows the potential of being used as plastic replica in micro-electro-mechanical system （MEMS）. This fabrication technology provides a new option for the increasing need of functionality, quality and economy of MEMS.

关键词： UV-LIGA bulk silicon micro machining 3D microfabrication polyethylene terephtalate glycol (PETG)

Metamorphic InGaAs Quantum Well Laser Diodes at 1.5μm on GaAs Grown by Molecular Beam Epitaxy

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Chinese Physics Letters 2009年第1期26卷 142-144页

作者：王海莉吴东海吴兵朋倪海桥黄社松熊永华王鹏飞韩勤牛智川 I.Tangring S.M.Wang State Key Laboratory For Superlattice and Microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing 10008 Department of microtechnology and Nanoscience Chalmers University of Technology 41296 Gothenburg Sweden

We report a 1.5-μm InGaAs/GaAs quantum well laser diode grown by molecular beam epitaxy on InGaAs metamorphic buffers. At 150K, for a 1500×10μm^2 ridge waveguide laser, the lazing wavelength is centred at 1.508 μm... 详细信息

关键词： current density gallium arsenide high-speed optical techniques III-V semiconductors indium compounds

Highly conformable chip-in-foil implants for neural applications

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Microsystems & Nanoengineering 2023年第3期9卷 245-257页

作者： Thomas Stieglitz Calogero Gueli Julien Martens Niklas Floto Max Eickenscheidt Markus Sporer Maurits Ortmanns Laboratory for Biomedical microtechnology Department of Microsystems Engineering-IMTEKUniversity of FreiburgD-79110 FreiburgGermany BrainLinks-BrainTools//IMBIT University of FreiburgD-79110 FreiburgGermany Institute of Microelectronics University of UlmD-89081 UlmGermany

Demands for neural interfaces around functionality,high spatial resolution,and longevity have recently *** requirements can be met with sophisticated silicon-based integrated *** miniaturized dice in flexible polymer substrates significantly improves their adaptation to the mechanical environment in the body,thus improving the systems’structural biocompatibility and ability to cover larger areas of the *** work addresses the main challenges in developing a hybrid chip-in-foil neural *** considered(1)the mechanical compliance to the recipient tissue that allows a long-term application and(2)the suitable design that allows the implant’s scaling and modular adaptation of chip *** element model studies were performed to identify design rules regarding die geometry,interconnect routing,and positions for contact pads on *** edge fillets in the die base shape proved an effective measure to improve die-substrate integrity and increase the area available for contact ***,routing of interconnects in the immediate vicinity of die corners should be avoided,as the substrate in these areas is prone to mechanical stress *** pads on dice should be placed with a clearance from the die rim to avoid delamination when the implant conforms to a curvilinear body.A microfabrication process was developed to transfer,align,and electrically interconnect multiple dice into conformable polyimide-based *** process enabled arbitrary die shape and size over independent target positions on the conformable substrate based on the die position on the fabrication wafer.

关键词： neural positions shape

Seeking advanced thermal management for stretchable electronics

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npj Flexible Electronics 2021年第1期5卷 94-98页

作者： Bin Sun Xingyi Huang College of microtechnology&Nanotechnology Qingdao UniversityQingdaoPR China Weihai Innovation research Institute of Qingdao University WeihaiPR China Department of Polymer Science and Engineering Shanghai Key Laboratory of Electrical Insulation and Thermal AgingShanghai Jiao Tong UniversityShanghaiPR China

With the trend of integration,miniaturization,and increasing power density of stretchable electronic devices,real-time thermal dissipation is becoming *** materials and/or structures with advanced thermal management for stretchable electronics becomes an urgent *** passive thermal management,the traditional thermal interfacial materials(TIMs)with flexibility cannot meet the demand of stretchable electronics,because stretchable devices are usually required to experience a large scale of bending,twisting,stretching,and so *** main challenge facing thermal management for stretchable electronics is how to maintain stable thermal conductance under large ***,we examine the development of materials and structures available in this *** also propose a comparative analysis of the existing challenges and provide possible solutions for the thermal management of stretchable electronics in the future.

关键词： thermal stretching maintain

Tunnel magnetoresistance with atomically thin two- dimensional hexagonal boron nitride barriers

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Nano research 2015年第4期8卷 1357-1364页

作者： Andre Dankert M. Venkata Kamalakar Abdul Wajid R. S. Patel Saroj P. Dash Department of microtechnology and Nanoscience Chalmers University of Technology SE-41296 Goteborg Sweden Department of Physics Birla Institute of Technology and Science Pilani--K K Birla Goa Campus Zuarinagar-403 726 Goa India

The two-dimensional atomically thin insulator hexagonal boron nitride （h-BN） constitutes a new paradigm in tunnel based devices. A large band gap, along with its atomically flat nature without dangling bonds or interface trap states, makes it an ideal candidate for tunnel spin transport in spintronic devices. Here, we demonstrate the tunneling of spin-polarized electrons through large area monolayer h-BN prepared by chemical vapor deposition in magnetic tunnel junctions. In ferromagnet/h-BN/ferromagnet heterostructures fabricated on a chip scale, we show tunnel magnetoresistance at room temperature. Measurements at different bias voltages and on multiple devices with different ferromagnetic electrodes establish the spin polarized tunneling using h-BN barriers. These results open the way for integration of 2D monolayer insulating barriers in active spintronic devices and circuits operating at ambient temperature, and for further exploration of their properties and prospects.

关键词： hexagonal boron nitride 2D layered materials CVD spintronics magnetic tunnel junction tunnel magnetoresistance tunnel barrier