Optical properties of InGaAsBi/GaAs strained quantum wells studied by temperature-dependent photoluminescence

作     者：顾溢 张永刚 宋禹忻 叶虹 曹远迎 李爱珍 王庶民 

作者机构：State Key Laboratory of Functional Materials for InformaticsShanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences Department of Microtechnology and NanoscienceChalmers University of TechnologyGothenburg SE-41296Sweden 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2013年第22卷第3期

页      面：508-511页

核心收录：

学科分类：070207[理学-光学] 07[理学] 08[工学] 0803[工学-光学工程] 0702[理学-物理学] 

基　　金：Project supported by the National Basic Research Program of China (Grant No. 2012CB619200) the National Natural Science Foundation of China (Grant Nos. 61275113,61204133,and 60906047) the Innovative Founding of Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences the Swedish Research Council 

主　　题：InGaAsBi strained quantum wells photoluminescence 

摘      要：The effect of bismuth on the optical properties of InGaAsBi/GaAs quantum well structures is investigated using the temperature-dependent photoluminescence from 12 K to 450 *** incorporation of bismuth in the InGaAsBi quantum well is confirmed and found to result in a red shift of photoluminescence wavelength of 27.3 meV at 300 *** photoluminescence intensity is significantly enhanced by about 50 times at 12 K with respect to that of the InGaAs quantum well due to the surfactant effect of *** temperature-dependent integrated photoluminescence intensities of the two samples reveal different behaviors related to various non-radiative recombination *** incorporation of bismuth also induces alloy non-uniformity in the quantum well,leading to an increased photoluminescence linewidth.