Metamorphic InGaAs Quantum Well Laser Diodes at 1.5μm on GaAs Grown by Molecular Beam Epitaxy
Metamorphic InGaAs Quantum Well Laser Diodes at 1.5μm on GaAs Grown by Molecular Beam Epitaxy作者机构：State Key Laboratory For Superlattice and Microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing 10008 Department of Microtechnology and Nanoscience Chalmers University of Technology 41296 Gothenburg Sweden
出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)
年 卷 期：2009年第26卷第1期
页 面：142-144页
核心收录：
学科分类：080901[工学-物理电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080401[工学-精密仪器及机械] 0804[工学-仪器科学与技术] 0803[工学-光学工程]
基 金：Supported partly by the National Natural Science Foundation of China under Grand Nos 60607016 and 60625405 the National Basic Research Programme of China and the National High Technology Research and Development Programme of China
主 题：current density gallium arsenide high-speed optical techniques III-V semiconductors indium compounds
摘 要：We report a 1.5-μm InGaAs/GaAs quantum well laser diode grown by molecular beam epitaxy on InGaAs metamorphic buffers. At 150K, for a 1500×10μm^2 ridge waveguide laser, the lazing wavelength is centred at 1.508 μm and the threshold current density is 667 A/cm^2 under pulsed operation. The pulsed lasers can operate up to 286 K.
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