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Characterization of the triple-gate flash memory endurance degradation mechanism

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Journal of Semiconductors 2009年第1期30卷 19-22页

作者：曹子贵孙凌李嘉秩 Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Graduate University of the Chinese academy of Sciences grace Semiconductor Manufacturing Corporation

Write/erase degradation after endurance cycling due to electron trapping events in triple-gate flash memory have been detected and analyzed using a UV erasure method. Different from the commonly degradation phenomenon, write-induced electron trapping in the floating gate oxide, electron trapping in tunneling oxide is observed in triple-gate flash memory. Further, the degradation due to single-electron locally trapping/de-trapping in hornshaped SuperFlash does not occur in the triple-gate flash cell This is because of planar poly-to-poly erasing in the triple-gate flash cell instead of tip erasing in the horn-shaped SuperFlash cell Moreover, by TCAD simulation, the trap location is identified and the magnitude of its density is quantified roughly.

关键词： Fowler-Nordheim tunneling endurance traps UV erasure

Overlay mark optimization for thick-film resist overlay metrology

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Journal of Semiconductors 2009年第6期30卷 142-146页

作者：朱亮李杰周从树顾以理杨华岳 Shanghai Institute of Microsystem and Information Technology Chinese academy of Sciences Graduate University of the Chinese academy of Sciences grace Semiconductor Manufacturing Corporation

For thick resist implant layers,such as a high voltage P well and a deep N well,systematic and uncorrectable overlay residues brought about by the tapered resist profiles were *** was found that the tapered profile is closely related to the pattern *** solutions of the manufacturing problem include hardening the film solidness or balancing the exposure *** this paper,instead of focusing on the process change methodology,we intend to solve the issue of the overlay metrology error from the perspective of the overlay mark *** on the comparison of the overlay performances between the proposed overlay mark and the original design,it is shown that the optimized overlay mark target achieves better performance in terms of profiles,dynamic precision,tool induced shift（TIS）,and ***,five types of overlay marks with dummy bars are studied,and a recommendation for the overlay marks is given.

关键词： overlay metrology error dynamic precision tool induced shift statistical process control depth of focus exposure latitude

A high-entropy-designed cathode with V^(5+)-V^(2+) multi-redox for high energy density sodium-ion batteries

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Journal of Energy Chemistry 2024年第10期97卷 429-437,I0008页

作者： Xiang Ding Xiaofen Yang Yibing Yang Liangwei Liu Yi Xiao Lili Han College of Chemistry and Materials Science Fujian Normal University.Fuzhou 350007FujianChina State Key Laboratory of Structural Chemistry Fujian Institute of Research on the Structure of MatterChinese Academy of SciencesFuzhou 350002FujianChina

Na_(3)V_(2)(PO_(4))_(3)(NVP)is gifted with fast Na^(+)conductive NASICON *** it still suffers from low electronic conductivity and inadequate energy ***,a high-entropy modification strategy is realized by doping V^(3+)site with Ga^(3+)/Cr^(3+)/Al^(3+)/Fe^(3+)/In^(3+)simultaneously(***_(3)V_(2-x)(GaCrAlFeIn)_x(PO_(4))_(3);x=0,0.04,0.06,and 0.08)to stimulate the V^(5+)■V^(2+)reversible multi-electron *** configuration high-entropy can effectively suppress the structural collapse,enhance the redox reversibility in high working voltage(4.0 V),and optimize the electronic induced *** in-situ X-ray powder diffraction and in-situ electrochemical impedance spectroscopy tests efficaciously confirm the robust structu ral recovery and far lower polarization throughout an entire charge-discharge cycle during 1.6-4.3 V,***,the density functional theory calculations clarify the stronger metallicity of high-entropy electrode than the bare that is derived from the more mobile free electrons surrounding the vicinity of Fermi *** grace of high-entropy design and multi-electron transfer reactions,the optimal Na_(3)V_(1.7)(GaCrAlFeIn)_(0.06)(PO_(4))_(3)can exhibit perfect cycling/rate performances(90.97%@5000 cycles@30 C;112 mA h g^(-1)@10 C and 109 mA h g^(-1)@30 C,2.0-4.3 V).Furthermore,it can supply ultra-high185 mA h g^(-1)capacity with fa ntastic energy density(522 W h kg^(-1))in half-cells(1.4-4.3 V),and competitive capacity(121 mA h g^(-1))as well as energy density(402 W h kg^(-1))in full-cells(1.6-4.1 V),demonstrating enormous application potential for sodium-ion batteries.

关键词： Na_(3)V_(2)(PO_(4))_(3) High-entropy V^(5+)■V^(2+)multi-redox High energy density Sodium-ion batteries

A novel symmetrical split-gate structure for 2-bit per cell flash memory

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Journal of Semiconductors 2014年第7期35卷 69-72页

作者：方亮孔蔚然顾靖张博邹世昌 Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Huahong grace Semiconductor Manufacturing Corporation University of Chinese academy of Sciences

A fully self-aligned symmetrical split-gate cell structure for 2-bit per cell flash memory with a very competitive bit size is presented. One common select gate is located between two floating gates and a pair of source/drain junctions are shared by the 2 bits. The fabrication method utilized here to create a self-aligned structure is to form a spacer against the prior layer without any additional mask. Although the cell consists of three channels in a series, the attributes from conventional split gate flash are still preserved with appropriate bias conditions. Program and erase operation is performed by using a source side injection （SSI） and a poly-to-poly tunneling mechanism respectively.

关键词： split-gate flash 2-bit per cell self-aligned process

A novel 2-T structure memory device using a Si nanodot for embedded application

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Journal of Semiconductors 2011年第12期32卷 86-90页

作者：杨潇楠王永张满红霍宗亮刘璟张博刘明 Laboratory of Nano-Fabrication and Novel Devices Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences grace Semiconductor Manufacturing Corporation

Performance and reliability ofa 2 transistor Si nanocrystal nonvolatile memory （NVM） are investigated. A good performance of the memory cell has been achieved, including a fast program/erase （P/E） speed under low voltages, an excellent data retention （maintaining for 10 years） and good endurance with a less threshold voltage shift of less than 10% after 104 P/E cycles. The data show that the device has strong potential for future embedded NVM applications.

关键词： nonvolatile memory nanocrystal reliability

High efficiency grating couplers based on shared process with CMOS MOSFETs

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Chinese Physics B 2013年第2期22卷 298-301页

作者：仇超盛振李乐彭树根武爱民王曦邹世昌甘甫烷 State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences grace Semiconductor Manufacturing Corporation University of Chinese academy of Sciences

Grating couplers are widely investigated as coupling interfaces between silicon-on-insulator waveguides and optical *** this work,a high-efficiency and complementary metal-oxide-semiconductor（CMOS） process compatible grating coupler is *** poly-Si layer used as a gate in the CMOS metal-oxide-semiconductor field effect transistor（MOSFET） is combined with a normal fully etched grating coupler,which greatly enhances its coupling *** optimal structure parameters,a coupling efficiency can reach as high as ～ 70% at a wavelength of 1550 nm as indicated by *** the angle of fabrication,all masks and etching steps are shared between MOSFETs and grating couplers,thereby making the high performance grating couplers easily integrated with CMOS *** errors such as alignment shift are also simulated,showing that the device is quite tolerant in fabrication.

关键词： grating coupler optical waveguide silicon-on-insulator poly-silicon

Erase voltage impact on 0.18μm triple self-aligned split-gate flash memory endurance

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Journal of Semiconductors 2010年第6期31卷 74-77页

作者：董耀旗孔蔚然 Nhan Do 王序伦李荣林 Shanghai Institute of Microsystem and Information Technology Chinese academy of Sciences grace Semiconductor Manufacturing Corporation Graduate University of the Chinese academy of Sciences Silicon Storage Technology Inc. 1171 Sonora Court Sunnyvale

The erase voltage impact on the 0.18μm triple self-aligned split-gate flash endurance is *** optimized erase voltage is necessary in order to achieve the best endurance.A lower erase voltage can cause more cell current degradation by increasing its sensitivity to the floating gate voltage drop,which is induced by tunnel oxide charge trapping during program/erase cycling.A higher erase voltage also aggravates the endurance degradation by introducing select gate oxide charge trapping.A progressive erase voltage method is proposed and demonstrated to better balance the two degradation mechanisms and thus further improve endurance performance.

关键词： split-gate flash endurance erase voltage

A novel sourceline voltage compensation circuit for embedded NOR flash memory

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Journal of Semiconductors 2014年第7期35卷 155-159页

作者：张圣波杨光军胡剑肖军 State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Micro-System and Information TechnologyChinese Academy of Sciences University of Chinese academy of Sciences Shanghai Huahong grace Semiconductor Manufacturing Corporation

A novel sourceline voltage compensation circuit for program operation in embedded flash memory is presented. With the sourceline voltage compensation circuit, the charge pump can modulate the output voltage according to the number of cells to be programmed with data ＂0＂. So the IR drop on the sourceline decoding path is compensated, and a stable sourceline voltage can be obtained. In order to reduce the power dissipation in program operation, a bit-inversion program circuit is adopted. By using the bit-inversion program circuit, the cells programmed to data ＂0＂ are limited to half of the bits of a write data word, thus power dissipation in program operation is greatly reduced. A 1.8-V 8 × 64-kbits embedded NOR flash memory employing the two circuits has been integrated using a GSMC 0.18-μm 4-poly 4-metal CMOS process.

关键词： charge pump flash memory sourceline voltage compensation circuit split-gate flash memory cell

A Deep-Learning and Transfer-Learning Hybrid Aerosol Retrieval Algorithm for FY4-AGRI:Development and Verification over Asia

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Engineering 2024年第7期38卷 164-174页

作者： Disong Fu Hongrong Shi christian AGueymard Dazhi Yang Yu Zheng Huizheng Che Xuehua Fan Xinlei Han Lin Gao Jianchun Bian Minzheng Duan Xiangao Xia Key Laboratory of Middle Atmosphere and Global Environment Observation Institute of Atmospheric PhysicsChinese Academy of SciencesBeijing 10029China Key Laboratory of Cloud-Precipitation Physics and Severe Storms Institute of Atmospheric PhysicsChinese Academy of SciencesBeijing 100029China Solar Consulting Services ColebrookNH 03576USA School of Electrical Engineering and Automation Harbin Institute of TechnologyHarbin 150006China State Key Laboratory of Severe Weather&Key Laboratory of Atmospheric Chemistry Institute of Atmospheric Composition and Environmental MeteorologyChinese Academy of Meteorological SciencesChina Meteorological AdministrationBeijing 100081China National Institute of Natural Hazards Ministry of Emergency Management of ChinaBeijing100085China Key Laboratory of Compound and Chained Natural Hazards Dynamics Ministry of Emergency Management of ChinaBeijing 100085China h National Satellite Meteorological Center China Meteorological AdministrationBeijing 100081China University of Chinese academy of Sciences Beijing 100049China

The Advanced Geosynchronous Radiation Imager(AGRI)is a mission-critical instrument for the Fengyun series of *** acquires full-disk images every 15 min and views East Asia every 5 min through 14 spectral bands,enabling the detection of highly variable aerosol optical depth(AOD).Quantitative retrieval of AOD has hitherto been challenging,especially over *** this study,an AOD retrieval algorithm is proposed that combines deep learning and transfer *** algorithm uses core concepts from both the Dark Target(DT)and Deep Blue(DB)algorithms to select features for the machinelearning(ML)algorithm,allowing for AOD retrieval at 550 nm over both dark and bright *** algorithm consists of two steps:①A baseline deep neural network(DNN)with skip connections is developed using 10 min Advanced Himawari Imager(AHI)AODs as the target variable,and②sunphotometer AODs from 89 ground-based stations are used to fine-tune the DNN ***-of-station validation shows that the retrieved AOD attains high accuracy,characterized by a coefficient of determination(R2)of 0.70,a mean bias error(MBE)of 0.03,and a percentage of data within the expected error(EE)of 70.7%.A sensitivity study reveals that the top-of-atmosphere reflectance at 650 and 470 nm,as well as the surface reflectance at 650 nm,are the two largest sources of uncertainty impacting the *** a case study of monitoring an extreme aerosol event,the AGRI AOD is found to be able to capture the detailed temporal evolution of the *** work demonstrates the superiority of the transfer-learning technique in satellite AOD retrievals and the applicability of the retrieved AGRI AOD in monitoring extreme pollution events.

关键词： Aerosol optical depth Retrieval algorithm Deep learning Transfer learning Advanced Geosynchronous Radiation Imager