Overlay mark optimization for thick-film resist overlay metrology

作     者：朱亮 李杰 周从树 顾以理 杨华岳 

作者机构：Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Graduate University of the Chinese Academy of Sciences Grace Semiconductor Manufacturing Corporation 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2009年第30卷第6期

页      面：142-146页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0702[理学-物理学] 

主　　题：overlay metrology error dynamic precision tool induced shift statistical process control depth of focus exposure latitude 

摘      要：For thick resist implant layers,such as a high voltage P well and a deep N well,systematic and uncorrectable overlay residues brought about by the tapered resist profiles were *** was found that the tapered profile is closely related to the pattern *** solutions of the manufacturing problem include hardening the film solidness or balancing the exposure *** this paper,instead of focusing on the process change methodology,we intend to solve the issue of the overlay metrology error from the perspective of the overlay mark *** on the comparison of the overlay performances between the proposed overlay mark and the original design,it is shown that the optimized overlay mark target achieves better performance in terms of profiles,dynamic precision,tool induced shift（TIS）,and ***,five types of overlay marks with dummy bars are studied,and a recommendation for the overlay marks is given.