Characterization of the triple-gate flash memory endurance degradation mechanism

作     者：曹子贵 孙凌 李嘉秩 

作者机构：Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Graduate University of the Chinese Academy of Sciences Grace Semiconductor Manufacturing Corporation 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2009年第30卷第1期

页      面：19-22页

核心收录：

学科分类：0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 081201[工学-计算机系统结构] 0702[理学-物理学] 0812[工学-计算机科学与技术（可授工学、理学学位）] 

主　　题：Fowler-Nordheim tunneling endurance traps UV erasure 

摘      要：Write/erase degradation after endurance cycling due to electron trapping events in triple-gate flash memory have been detected and analyzed using a UV erasure method. Different from the commonly degradation phenomenon, write-induced electron trapping in the floating gate oxide, electron trapping in tunneling oxide is observed in triple-gate flash memory. Further, the degradation due to single-electron locally trapping/de-trapping in hornshaped SuperFlash does not occur in the triple-gate flash cell This is because of planar poly-to-poly erasing in the triple-gate flash cell instead of tip erasing in the horn-shaped SuperFlash cell Moreover, by TCAD simulation, the trap location is identified and the magnitude of its density is quantified roughly.