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Systematic dissection of disease resistance to southern corn rust by bulked-segregant and transcriptome analysis

The Crop Journal 2022年第2期10卷 426-435页

作者： Xiaohuan Mu Zhuangzhuang Dai Zhanyong Guo Hui Zhang Jianping Yang xinke gan Jiankun Li Zonghua Liu Jihua Tang Mingyue Gou State Key Laboratory of Wheat and Maize Crop Science Collaborative Innovation Center of Henan Grain CropsCollege of AgronomyHenan Agricultural UniversityZhengzhou 450002HenanChina

Southern corn rust(SCR) is a destructive maize disease caused by Puccinia polysora Underw. To investigate the mechanism of SCR resistance in maize, a highly resistant inbred line, L119 A, and a highly susceptible line, Lx9801, were subjected to gene mapping and transcriptome analysis. Bulked-segregant analysis coupled with whole-genome sequencing revealed several quantitative trait loci(QTL) on chromosomes 1, 6, 8, and 10. A set of 25 genes, including two coiled-coil nucleotide-binding site leucine-rich repeat(CC-NBS-LRR) genes, were identified as candidate genes for a major-effect QTL on chromosome 10. To investigate the mechanism of SCR resistance in L119 A, RNA-seq of P. polysorainoculated and non-inoculated plants of L119 A and Lx9801 was performed. Unexpectedly, the number of differentially expressed genes in inoculated versus non-inoculated L119 A plants was about 10 times that of Lx9801, with only 29 common genes identified in both lines, suggesting extensive gene expression changes in the highly resistant but not in the susceptible line. Based on the transcriptome analysis, one of the CC-NBS-LRR candidate genes was confirmed to be upregulated in L119 A relative to Lx9801 independently of P. polysora inoculation. Gene Ontology and Kyoto Encyclopedia of Genes and Genomes analyses indicated that transcription factors, as well as genes involved in defense responses and metabolic processes, were dominantly enriched, with the phenylpropanoid biosynthesis pathway most specifically activated. Consistently, accumulation of phenylpropanoid-derived lignin, especially S lignin, was drastically increased in L119 A after P. polysora inoculation, but remained unchanged in Lx9801, suggesting a critical role of lignin in SCR resistance. A regulatory network of defense activation and metabolic change in SCR-resistant maize upon P. polysora infection is described.

关键词： Maize Southern corn rust BSA-seq RNA-seq Lignin

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Electrical performance and reliability analysis of vertical gallium nitride Schottky barrier diodes with dual-ion implanted edge termination

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Chip 2024年第3期3卷 36-42页

作者： Bo Li Jinpei Lin Linfei Gao Zhengweng Ma Huakai Yang Zhihao Wu Hsien-Chin Chiu Hao-Chung Kuo Chunfu Zhang Zhihong Liu Shuangwu Huang Wei He xinke Liu College of Materials Science and Engineering College of Electronics and Information EngineeringInstitute of Microelectronics(IME)Guangdong Research Center for Interfacial Engineering of Functional MaterialsState Key Laboratory of Radio Frequency Heterogeneous IntegrationShenzhen UniversityShenzhen 518060China Department of Electronic Engineering Chang Gung UniversityTaoyuan 333TaiwanChina Department of Photonics and the Institute of Electro-Optical Engineering and with Foxconn Semiconductor Research InstituteNational Chiao Tung UniversityHsinchu 300TaiwanChina Xidian University School of MicroelectronicsXi’an710071China

In this study,a galliumnitride(gan)substrate and its 15μmepitaxial layer were entirely grown by adopting the hydride vapor phase epitaxy(HVPE)*** enhance the breakdown voltage(VBR)of vertical gan-on-gan Schottky barrier diodes(SBDs),a dual ion coimplantation of carbon and heliumwas employed to create the edge *** resulting devices exhibited a low turn-on voltage of 0.55 V,a high Ion/Ioff ratio of approximately 109,and a lowspecific onresistance of 1.93 mU cm^(2).When the ion implantation edge was terminated,the maximumVBR of the devices reached 1575 V,with an average improvement of 126%.These devices demonstrated a high figure of merit(FOM)of 1.28 GW cm^(-2) and showed excellent reliability during pulse stress testing.

关键词： Vertical gan SBD HVPE Dual ion co-implantation Leakage mechanism Device reliability

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Systematic dissection of disease resistance to southern corn rust by bulked-segregant and transcriptome analysis

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The Crop Journal 2022年第2期

作者： Xiaohuan Mu Zhuangzhuang Dai Zhanyong Guo Hui Zhang Jianping Yang xinke gan Jiankun Li Zonghua Liu Jihua Tang Mingyue Gou

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3D macropore carbon-vacancy g-C_(3)N_(4) constructed using polymethylmethacrylate spheres for enhanced photocatalytic H_(2) evolution and CO_(2) reduction

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Journal of Energy Chemistry 2021年第2期30卷 139-146,I0006页

作者： Xuewen Wang Qjuchan Li Lei gan Xinfei Ji Fayun Chen xinke Peng Rongbin Zhang Key Laboratory of Jiangxi Province for Environment and Energy Catalysis The College of ChemistryNanchang UniversityNanchang 330031JiangxiChina College of Chemistry and Environmental Science Shangrao Normal UniversityShangrao 334001JiangxiChina Jiangxi Energy Sales Co. LtdNanchang 330031Jiangxi.China

Metal-free g-C_3N_4 is widely used in photocatalytic reactions owing to its suitable band ***, it has low specific surface area and insufficient absorbance for visible light, and its photoexcited carriers have high recombination rates. In this study, the 3 D macropore C-vacancy g-C_3N_4 was prepared through a facile one-step route. Polymethylmethacrylate is used as a template to increase the surface reaction sites of g-C_3N_4 and extend its visible-light range. Compared to unmodified g-C_3N_4, the H2 production and CO_2 reduction rates of the fabricated g-C_3N_4 significantly improved. The special pore structure significantly improved the light utilization efficiency of g-C_3N_4 and increased the number of surface-active sites. The introduction of C-vacancy extended the absorption band of visible-light and suppressed the carrier recombination. The newly developed synthesis strategy can improve solar energy conversion efficiency and potentially modifies g-C_3N_4.

关键词： Carbon nitride Macropore Photocatalytic H_(2)evolution CO_(2)reduction

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基于录井资料的页岩油随钻储集层评价技术

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录井工程 2021年第2期32卷 45-49页

作者：侯力虎徐声驰刘志邹先锋罗宏斌冯志清甘新科吉军中国石油西部钻探工程有限公司地质研究院储集层导向研究所新疆克拉玛依市834000 中国石油西部钻探工程有限公司地质研究院

由于页岩油非常规油藏特殊的地质特征,常规测井曲线无法对页岩油储集层的含油性和物性进行有效评价,必须依赖核磁测井进行相关评价,而应用核磁测井进行储集层评价费用昂贵,不便于大规模应用。以准噶尔盆地吉木萨尔凹陷芦草沟组页岩油为... 详细信息

由于页岩油非常规油藏特殊的地质特征,常规测井曲线无法对页岩油储集层的含油性和物性进行有效评价,必须依赖核磁测井进行相关评价,而应用核磁测井进行储集层评价费用昂贵,不便于大规模应用。以准噶尔盆地吉木萨尔凹陷芦草沟组页岩油为例,通过深入挖掘录井资料的潜力,发现录井参数与核磁孔隙度相关性较好,进而以核磁测井为参考标准,利用录井参数进行储集层孔隙度的拟合计算,形成了基于录井资料的储集层评价技术。运用该技术指导页岩油储集层压裂改造取得了良好的效果。

关键词：页岩油气测校正岩石热解 XRD 录井资料储集层评价孔隙度

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垂直氮化镓沟槽栅极场效应管的优化设计

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固体电子学研究与进展 2024年第1期44卷 19-23页

作者：杨华恺刘新科姜梅何仕杰贺威深圳大学电子与信息工程学院广东深圳518060

在传统的氮化镓沟槽栅极场效应管的基础上,通过引入Algan层,在异质结界面处形成二维电子气减小器件的导通电阻,并对漂移层的厚度和掺杂浓度进行讨论,使用TCAD软件对器件进行设计优化。最终优化后的漂移层厚度为6μm,掺杂浓度为5×10^(16... 详细信息

在传统的氮化镓沟槽栅极场效应管的基础上,通过引入Algan层,在异质结界面处形成二维电子气减小器件的导通电阻,并对漂移层的厚度和掺杂浓度进行讨论,使用TCAD软件对器件进行设计优化。最终优化后的漂移层厚度为6μm,掺杂浓度为5×10^(16)cm^(-3)。器件获得了较低的导通电阻R_(on)=0.47 mΩ·cm^(2),较高的击穿电压V_(BR)=2880 V和品质因子FOM=17.6 GW·cm^(-2)。结果显示出了沟槽栅极垂直氮化镓场效应管在高压大电流应用场景下的优势。

关键词：氮化镓沟槽栅极场效应晶体管 Baliga品质因子击穿电压导通电阻

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Strain enhancement for a MoS2-on-gan photodetector with an Al2O3 stress liner grown by atomic layer deposition

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Photonics Research 2020年第6期8卷 799-805页

作者： ZHIWEN LI JIANGLIU LUO SHENGQUN HU QIANG LIU WENJIE Yu YOUMING LU xinke LIU College of Materials Science and Engineering Shenzhen UniversityShenzhen 518060China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China

Strain regulation as an effective way to enhance the photoelectric properties of two dimensional(2D)transition metal dichalcogenides has been widely employed to improve the performance of photovoltaic *** this work,tensile strain was introduced in multilayer MoS2 grown on gan by depositing 3 nm of Al2O3 on the *** temperature dependent Raman spectrum shows that the thermal stability of MoS2 is improved by *** simulations confirmed the existence of tensile strain on MoS2 covered with Al2O3,and the bandgap and electron effective mass of six layers of MoS2 decreased due to tensile strain,which resulted in an increase of electron *** to the tensile strain ffect,the photodetector with the Al2O3 stress liner achieved better performance under the illumination of 365 nm wavelength,including a higher responsivity of 24.6 A/W,photoconductive gain of 520,and external quantum fficiency of 8381%,which are more than twice the corresponding values of photodetectors without *** work provides an effective technical way for improving the performance of 2D material photodetectors.

关键词： stress illumination layer

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Monolithic integration of MoS2-based visible detectors and gan-based UV detectors

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Photonics Research 2019年第10期7卷 1127-1133页

作者： YOU WU ZHIWEN LI KAH-WEE ANG YUPING JIA ZHIMING SHI ZHI HUANG WENJIE YU XIAOJUAN SUN xinke LIU DABING LI State Key Laboratory of Luminescence and Applications Changchun Institute of OpticsFine Mechanics and PhysicsChinese Academy of SciencesChangchun 130033China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Department of Electrical and Computer Engineering National University of SingaporeSingapore 117583Singapore Shenzhen Castle Security Technology Co. Ltd.Shenzhen 518000China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China

With the increasing demand for high integration and multi-color photodetection for both military and civilian applications, the research of multi-wavelength detectors has become a new research hotspot. However, current research has been mainly in visible dual-or multi-wavelength detectors, while integration of both visible light and ultraviolet(UV) dual-wavelength detectors has rarely been studied. In this work, large-scale and high-quality monolayer MoS2 was grown by the chemical vapor deposition method on transparent free-standing gan substrate. Monolithic integration of MoS2-based visible detectors and gan-based UV detectors was demonstrated using common semiconductor fabrication technologies such as photolithography, argon plasma etching, and metal deposition. High performance of a 280 nm and 405 nm dual-wavelength photodetector was *** responsivity of the UV detector reached 172.12 A/W, while that of the visible detector reached 17.5 A/***, both photodetectors achieved high photocurrent gain, high external quantum efficiency, high normalized detection rate, and low noise equivalent power. Our study extends the future application of dual-wavelength detectors for image sensing and optical communication.

关键词： visible integration ultraviolet

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Normally-off Algan/gan heterojunction field-effect transistors with in-situ AlN gate insulator

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Chinese Physics B 2022年第12期31卷 526-530页

作者： Taofei Pu Shuqiang Liu Xiaobo Li Ting-Ting Wang Jiyao Du Liuan Li Liang He xinke Liu Jin-Ping Ao Hanshan Normal University Chaozhou 521041China No.5 Electronics Research Institute of the Ministry of Industry and Information Technology Guangzhou 510610China Shenzhen University Shenzhen 518000China School of Microelectronics Xidian UniversityXi’an 710071China School of Automation and Electrical Engineering Shenyang Ligong UniversityShenyang 110159China Yibin Research Institute Jilin UniversityYibin 644000China

Algan/gan heterojunction field-effect transistors(HFETs)with p-gan cap layer are developed for normally-off operation,in which an in-situ grown AlN layer is utilized as the gate *** with the SiNxgate insulator,the AlN/p-gan interface presents a more obvious energy band bending and a wider depletion region,which helps to positively shift the threshold *** addition,the relatively large conduction band offset of AlN/p-gan is beneficial to suppress the gate leakage current and enhance the gate breakdown *** to the introduction of AlN layer,normally-off p-gan capped Algan/gan HFET with a threshold voltage of 4 V and a gate swing of 13 V is ***,the field-effect mobility is approximately 1500 cm^(2)·V^(-1)·s^(-1)in the 2DEG channel,implying a good device performance.

关键词： Algan/gan HFET normally-off in-situ AlN metal-insulator-semiconductor

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Construction of van der Waals substrates for largely mismatched heteroepitaxy systems using first principles

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Science China(Physics,Mechanics & Astronomy) 2019年第12期62卷 89-95页

作者： ZhiMing Shi XiaoJuan Sun YuPing Jia xinke Liu ShanLi Zhang ZhanBin Qi DaBing Li State Key Laboratory of Luminescence and Applications Changchun Institute of OpticsFine Mechanics and PhysicsChinese Academy of SciencesChangchun 130033China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China

The high density of defects induced by large strains in largely mismatched heteroepitaxy systems, such as AlN and gan, because of the large lattice and thermal mismatch between substrates and epilayers is the bottleneck problem. Graphene-assisted van der Waals(vdW) heteroepitaxy offers a new opportunity to resolve this problem. However, it suffers from the difficulty of nucleation. Here we theoretically assess the effects of five 2D materials for vdW heteroepitaxy of AlN and gan, including graphene, hBN, MoS2, gC3N, and gC3N4, and provide physical insights using first-principle calculations. MoS2 and gC3N exhibit significant potential to overcome the shortcomings of graphene owing to their appropriate binding strengths and Al(or Ga)diffusion barriers. Moreover, the interface behavior between the epilayers and the substrates are carefully analyzed. Our findings are helpful not only for obtaining high-quality AlN and gan films but also for developing new criterions to discover effective 2D materials for vdW heteroepitaxy.

关键词： van der Waals epitaxy 2D materials first principles

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