Monolithic integration of MoS2-based visible detectors and GaN-based UV detectors

作     者：YOU WU ZHIWEN LI KAH-WEE ANG YUPING JIA ZHIMING SHI ZHI HUANG WENJIE YU XIAOJUAN SUN XINKE LIU DABING LI 

作者机构：State Key Laboratory of Luminescence and ApplicationsChangchun Institute of OpticsFine Mechanics and PhysicsChinese Academy of SciencesChangchun 130033China Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing 100049China Department of Electrical and Computer EngineeringNational University of SingaporeSingapore 117583Singapore Shenzhen Castle Security Technology Co.Ltd.Shenzhen 518000China State Key Laboratory of Functional Materials for InformaticsShanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China 

出 版 物：《Photonics Research》 (光子学研究（英文版）)

年 卷 期：2019年第7卷第10期

页      面：1127-1133页

核心收录：

学科分类：080901[工学-物理电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080401[工学-精密仪器及机械] 0804[工学-仪器科学与技术] 0803[工学-光学工程] 

基　　金：National Key Research and Development Plan(2017YFB0403000) National Science Fund for Distinguished Young Scholars(61725403) National Natural Science Foundation of China(61874118,61704171,61504083,61674161) CAS Pioneer Hundred Talents Program Jilin Provincial Science&Technology Department(20180201026GX) Key Program of the International Partnership Program of CAS(181722KYSB20160015) Special Project for Inter-government Collaboration of the State Key Research and Development Program(2016YFE0118400) Youth Innovation Promotion Association of CAS Guangdong Province Key Research and Development Plan(2019B010138002) 

主　　题：visible integration ultraviolet 

摘      要：With the increasing demand for high integration and multi-color photodetection for both military and civilian applications, the research of multi-wavelength detectors has become a new research hotspot. However, current research has been mainly in visible dual-or multi-wavelength detectors, while integration of both visible light and ultraviolet(UV) dual-wavelength detectors has rarely been studied. In this work, large-scale and high-quality monolayer MoS2 was grown by the chemical vapor deposition method on transparent free-standing GaN substrate. Monolithic integration of MoS2-based visible detectors and GaN-based UV detectors was demonstrated using common semiconductor fabrication technologies such as photolithography, argon plasma etching, and metal deposition. High performance of a 280 nm and 405 nm dual-wavelength photodetector was *** responsivity of the UV detector reached 172.12 A/W, while that of the visible detector reached 17.5 A/***, both photodetectors achieved high photocurrent gain, high external quantum efficiency, high normalized detection rate, and low noise equivalent power. Our study extends the future application of dual-wavelength detectors for image sensing and optical communication.