Normally-off AlGaN/GaN heterojunction field-effect transistors with in-situ AlN gate insulator

作     者：Taofei Pu Shuqiang Liu Xiaobo Li Ting-Ting Wang Jiyao Du Liuan Li Liang He Xinke Liu Jin-Ping Ao 蒲涛飞;刘树强;李小波;王婷婷;都继瑶;李柳暗;何亮;刘新科;敖金平

作者机构：Hanshan Normal UniversityChaozhou 521041China No.5 Electronics Research Institute of the Ministry of Industry and Information TechnologyGuangzhou 510610China Shenzhen UniversityShenzhen 518000China School of MicroelectronicsXidian UniversityXi’an 710071China School of Automation and Electrical EngineeringShenyang Ligong UniversityShenyang 110159China Yibin Research InstituteJilin UniversityYibin 644000China 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2022年第31卷第12期

页      面：526-530页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：Supported by the National Natural Science Foundation of China(Grant No.61904207) scientific research support foundation for introduced high-level talents of Shenyang Ligong University(Grant No.1010147000914) the Natural Science Foundation of Sichuan Province,China(Grant No.2022NSFSC0886) 

主　　题：AlGaN/GaN HFET normally-off in-situ AlN metal-insulator-semiconductor 

摘      要：AlGaN/GaN heterojunction field-effect transistors(HFETs)with p-GaN cap layer are developed for normally-off operation,in which an in-situ grown AlN layer is utilized as the gate *** with the SiNxgate insulator,the AlN/p-GaN interface presents a more obvious energy band bending and a wider depletion region,which helps to positively shift the threshold *** addition,the relatively large conduction band offset of AlN/p-GaN is beneficial to suppress the gate leakage current and enhance the gate breakdown *** to the introduction of AlN layer,normally-off p-GaN capped AlGaN/GaN HFET with a threshold voltage of 4 V and a gate swing of 13 V is ***,the field-effect mobility is approximately 1500 cm^(2)·V^(-1)·s^(-1)in the 2DEG channel,implying a good device performance.