Electrical performance and reliability analysis of vertical gallium nitride Schottky barrier diodes with dual-ion implanted edge termination

作     者：Bo Li Jinpei Lin Linfei Gao Zhengweng Ma Huakai Yang Zhihao Wu Hsien-Chin Chiu Hao-Chung Kuo Chunfu Zhang Zhihong Liu Shuangwu Huang Wei He Xinke Liu 

作者机构：College of Materials Science and EngineeringCollege of Electronics and Information EngineeringInstitute of Microelectronics(IME)Guangdong Research Center for Interfacial Engineering of Functional MaterialsState Key Laboratory of Radio Frequency Heterogeneous IntegrationShenzhen UniversityShenzhen 518060China Department of Electronic EngineeringChang Gung UniversityTaoyuan 333TaiwanChina Department of Photonics and the Institute of Electro-Optical Engineeringand with Foxconn Semiconductor Research InstituteNational Chiao Tung UniversityHsinchu 300TaiwanChina Xidian UniversitySchool of MicroelectronicsXi’an710071China 

出 版 物：《Chip》 (芯片（英文）)

年 卷 期：2024年第3卷第3期

页      面：36-42页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：supported by the GuangdongMajor Project of Basic and Applied Basic Research(2023B0303000012) Guangdong Science Foundation for Distinguished Young Scholars(2022B1515020073) Shenzhen Science and Technology Program(JCYJ20220818102809020) 

主　　题：Vertical GaN SBD HVPE Dual ion co-implantation Leakage mechanism Device reliability 

摘      要：In this study,a galliumnitride(GaN)substrate and its 15μmepitaxial layer were entirely grown by adopting the hydride vapor phase epitaxy(HVPE)*** enhance the breakdown voltage(VBR)of vertical GaN-on-GaN Schottky barrier diodes(SBDs),a dual ion coimplantation of carbon and heliumwas employed to create the edge *** resulting devices exhibited a low turn-on voltage of 0.55 V,a high Ion/Ioff ratio of approximately 109,and a lowspecific onresistance of 1.93 mU cm^(2).When the ion implantation edge was terminated,the maximumVBR of the devices reached 1575 V,with an average improvement of 126%.These devices demonstrated a high figure of merit(FOM)of 1.28 GW cm^(-2) and showed excellent reliability during pulse stress testing.