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Chip 2024年第3期3卷 36-42页

作者： Bo Li Jinpei Lin Linfei Gao Zhengweng Ma Huakai Yang Zhihao Wu Hsien-Chin Chiu Hao-Chung Kuo Chunfu Zhang Zhihong liu Shuangwu Huang Wei He xinke liu College of Materials Science and Engineering College of Electronics and Information EngineeringInstitute of Microelectronics(IME)Guangdong Research Center for Interfacial Engineering of Functional MaterialsState Key Laboratory of Radio Frequency Heterogeneous IntegrationShenzhen UniversityShenzhen 518060China Department of Electronic Engineering Chang Gung UniversityTaoyuan 333TaiwanChina Department of Photonics and the Institute of Electro-Optical Engineering and with Foxconn Semiconductor Research InstituteNational Chiao Tung UniversityHsinchu 300TaiwanChina Xidian University School of MicroelectronicsXi’an710071China

In this study,a galliumnitride(GaN)substrate and its 15μmepitaxial layer were entirely grown by adopting the hydride vapor phase epitaxy(HVPE)*** enhance the breakdown voltage(VBR)of vertical GaN-on-GaN Schottky barrier diodes(SBDs),a dual ion coimplantation of carbon and heliumwas employed to create the edge *** resulting devices exhibited a low turn-on voltage of 0.55 V,a high Ion/Ioff ratio of approximately 109,and a lowspecific onresistance of 1.93 mU cm^(2).When the ion implantation edge was terminated,the maximumVBR of the devices reached 1575 V,with an average improvement of 126%.These devices demonstrated a high figure of merit(FOM)of 1.28 GW cm^(-2) and showed excellent reliability during pulse stress testing.

关键词： Vertical GaN SBD HVPE Dual ion co-implantation Leakage mechanism Device reliability

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垂直氮化镓沟槽栅极场效应管的优化设计

固体电子学研究与进展 2024年第1期44卷 19-23页

作者：杨华恺刘新科姜梅何仕杰贺威深圳大学电子与信息工程学院广东深圳518060

在传统的氮化镓沟槽栅极场效应管的基础上,通过引入AlGaN层,在异质结界面处形成二维电子气减小器件的导通电阻,并对漂移层的厚度和掺杂浓度进行讨论,使用TCAD软件对器件进行设计优化。最终优化后的漂移层厚度为6μm,掺杂浓度为5×10^(16... 详细信息

在传统的氮化镓沟槽栅极场效应管的基础上,通过引入AlGaN层,在异质结界面处形成二维电子气减小器件的导通电阻,并对漂移层的厚度和掺杂浓度进行讨论,使用TCAD软件对器件进行设计优化。最终优化后的漂移层厚度为6μm,掺杂浓度为5×10^(16)cm^(-3)。器件获得了较低的导通电阻R_(on)=0.47 mΩ·cm^(2),较高的击穿电压V_(BR)=2880 V和品质因子FOM=17.6 GW·cm^(-2)。结果显示出了沟槽栅极垂直氮化镓场效应管在高压大电流应用场景下的优势。

关键词：氮化镓沟槽栅极场效应晶体管 Baliga品质因子击穿电压导通电阻

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可移动式液压支架外加载及比压测试技术研究

煤炭工程 2024年第1期56卷 214-219页

作者：赵锐刘欣科杨建新唐小龙王阳阳煤炭科学技术研究院有限公司检测分院北京100013 煤科(北京)检测技术有限公司北京100013 国家煤矿支护设备质量检验检测中心北京100013 煤炭资源高效开采与洁净利用国家重点实验室北京100013

为解决液压支架让缩性能、底座比压等测试项目的检测检验以及现有液压支架试验装置无法进行外加载的技术难题,设计了一种可移动式液压支架外加载及比压测试装置。该装置采用12根气液组合功能加载油缸作为外加载动力源及比压测试数据采... 详细信息

为解决液压支架让缩性能、底座比压等测试项目的检测检验以及现有液压支架试验装置无法进行外加载的技术难题,设计了一种可移动式液压支架外加载及比压测试装置。该装置采用12根气液组合功能加载油缸作为外加载动力源及比压测试数据采集元件,可分别用于外加载和底座比压测试。外加载测试时,利用基于高精度刚性液压同步油缸调整技术的多缸同步加载实现测试装置的外加载功能;比压测试时,根据试验装置承载外载荷时不同区段的“气弹簧”沉降位移及压力数据的相互关系得到比压分布数值。通过在不同的试验台对不同规格液压支架进行让缩性能和比压测试试验,发现外加载测试过程平稳、比压测试数据采集快捷准确。实际测试表明,该装置具备在不同的液压支架试验装置间进行共享使用的功能,可有效解决液压支架外加载及比压测试的技术难题。

关键词：外加载比压测试气液组合功能加载油缸可移动式液压支架

Strain enhancement for a MoS2-on-GaN photodetector with an Al2O3 stress liner grown by atomic layer deposition

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Photonics Research 2020年第6期8卷 799-805页

作者： ZHIWEN LI JIANGliu LUO SHENGQUN HU QIANG liu WENJIE Yu YOUMING LU xinke liu College of Materials Science and Engineering Shenzhen UniversityShenzhen 518060China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China

Strain regulation as an effective way to enhance the photoelectric properties of two dimensional(2D)transition metal dichalcogenides has been widely employed to improve the performance of photovoltaic *** this work,tensile strain was introduced in multilayer MoS2 grown on GaN by depositing 3 nm of Al2O3 on the *** temperature dependent Raman spectrum shows that the thermal stability of MoS2 is improved by *** simulations confirmed the existence of tensile strain on MoS2 covered with Al2O3,and the bandgap and electron effective mass of six layers of MoS2 decreased due to tensile strain,which resulted in an increase of electron *** to the tensile strain ffect,the photodetector with the Al2O3 stress liner achieved better performance under the illumination of 365 nm wavelength,including a higher responsivity of 24.6 A/W,photoconductive gain of 520,and external quantum fficiency of 8381%,which are more than twice the corresponding values of photodetectors without *** work provides an effective technical way for improving the performance of 2D material photodetectors.

关键词： stress illumination layer

Anomalously enhanced thermal stability of phosphorene via metal adatom doping: An experimental and first-principles study

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Nano Research 2016年第9期9卷 2687-2695页

作者： Xuewei Feng Vadym V.Kulish Ping Wu xinke liu Kah-Wee Ang Department of Electrical and Computer Engineering National University of Singapore4 Engineering Drive 3Singapore 117583Singapore Entropic Interface Group(EIG) Engineering Product DevelopmentSingapore University of Technology and Design(SUTD)8 Somapah RoadSingapore 487372Singapore College of Materials Science and Engineering Shenzhen Engineering Laboratory for Advanced Technology of CeramicsNanshan District Key Lab for Biopolymer and Safety EvaluationShenzhen University3688 Nanhai AvenueShenzhen 518060China

Atomically thin black phosphorus, also known as phosphorene, is an emerging two-dimensional (2D) material, which has attracted increasing attention due to its unique electronic and optoelectronic properties. However, the reduced thermal stability of phosphorene limits its suitability for high-temperature fabrication processes, which could be detrimental for the performance of phosphorenebased devices. Here, we investigate the impact of doping by Al and Hf transition metal adatoms on the thermal stability of phosphorene. The formation of Al–P covalent bonds was found to significantly improve the thermal coefficients of the Ag1, B2g, and Ag2phonon modes to 0.00044, 0.00081, and 0.00012 cm–1·°C–1, respectively, which are two orders of magnitude lower than those observed for pristine P–P bonds (~0.01 cm–1·°C–1). First-principles calculations within the density functional theory framework reveal that the observed thermal stability enhancement in the Al-doped material reflects a significantly higher Al binding energy, due to the stronger Al–P bonds compared to the weak van der Waals interactions between adjacent P atoms in the undoped material. The present work thus paves the way towards phosphorene materials with improved structural stability, which could be promising candidates for potential nanoelectronic and optoelectronic applications. [Figure not available: see fulltext.] © 2016, Tsinghua University Press and Springer-Verlag Berlin Heidelberg.

关键词： phosphorene black phosphorus adatom doping transition metals thermal stability

淄博烧烤现象下生命周期评价在餐厨垃圾中的解析

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广东化工 2024年第3期51卷 130-132,166页

作者：刘新科张乔梁建晔黎晓华深圳大学材料学院广东深圳518060

本文旨在探讨生命周期评价在淄博烧烤现象下餐厨垃圾中的应用前景,并提供科学解决方法,具有重要的现实意义。淄博烧烤现象的突发给城市管理以及生活垃圾处理带来巨大挑战,尤其是餐厨垃圾的解决问题更是成为了人们关注的焦点。本文使用... 详细信息

本文旨在探讨生命周期评价在淄博烧烤现象下餐厨垃圾中的应用前景,并提供科学解决方法,具有重要的现实意义。淄博烧烤现象的突发给城市管理以及生活垃圾处理带来巨大挑战,尤其是餐厨垃圾的解决问题更是成为了人们关注的焦点。本文使用层次分析法探讨生命周期评价在餐厨垃圾处理中的具体应用,旨在为淄博烧烤现象下餐厨垃圾的治理和环境保护提供科学依据和决策支持。

关键词：生命周期评价淄博烧烤现象餐厨垃圾层次分析法环境材料

Introducing voids around the interlayer of AlN by high temperature annealing

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Chinese Physics B 2022年第7期31卷 448-453页

作者： Jianwei Ben Jiangliu Luo Zhichen Lin Xiaojuan Sun xinke liu Xiaohua Li College of Materials Science and Engineering Shenzhen University-Hanshan Normal University Postdoctoral WorkstationShenzhen UniversityShenzhen 518060China College of Physics and Optoelectronic Engineering Shenzhen UniversityShenzhen 518060China State Key Laboratory of Luminescence and Applications Changchun Institute of OpticsFine Mechanics and PhysicsChinese Academy of SciencesChangchun 130033China

Introducing voids into AlN layer at a certain height using a simple method is meaningful but *** this work,the AlN/sapphire template with AlN interlayer structure was designed and grown by metal-organic chemical vapor ***,the AlN template was annealed at 1700℃for an hour to introduce the *** was found that voids were formed in the AlN layer after high-temperature annealing and they were mainly distributed around the AlN ***,the dislocation density of the AlN template decreased from 5.26×10^(9)cm^(-2)to 5.10×10^(8)cm^(-2).This work provides a possible method to introduce voids into AlN layer at a designated height,which will benefit the design of AlN-based devices.

关键词： AlN template AlN interlayer voids high-temperature annealing

Monolithic integration of MoS2-based visible detectors and GaN-based UV detectors

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Photonics Research 2019年第10期7卷 1127-1133页

作者： YOU WU ZHIWEN LI KAH-WEE ANG YUPING JIA ZHIMING SHI ZHI HUANG WENJIE YU XIAOJUAN SUN xinke liu DABING LI State Key Laboratory of Luminescence and Applications Changchun Institute of OpticsFine Mechanics and PhysicsChinese Academy of SciencesChangchun 130033China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Department of Electrical and Computer Engineering National University of SingaporeSingapore 117583Singapore Shenzhen Castle Security Technology Co. Ltd.Shenzhen 518000China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China

With the increasing demand for high integration and multi-color photodetection for both military and civilian applications, the research of multi-wavelength detectors has become a new research hotspot. However, current research has been mainly in visible dual-or multi-wavelength detectors, while integration of both visible light and ultraviolet(UV) dual-wavelength detectors has rarely been studied. In this work, large-scale and high-quality monolayer MoS2 was grown by the chemical vapor deposition method on transparent free-standing GaN substrate. Monolithic integration of MoS2-based visible detectors and GaN-based UV detectors was demonstrated using common semiconductor fabrication technologies such as photolithography, argon plasma etching, and metal deposition. High performance of a 280 nm and 405 nm dual-wavelength photodetector was *** responsivity of the UV detector reached 172.12 A/W, while that of the visible detector reached 17.5 A/***, both photodetectors achieved high photocurrent gain, high external quantum efficiency, high normalized detection rate, and low noise equivalent power. Our study extends the future application of dual-wavelength detectors for image sensing and optical communication.

关键词： visible integration ultraviolet

老年急性脑梗死患者血清lncRNA XIST和lncRNA SOX2OT水平及其预后价值

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热带医学杂志 2024年第4期24卷 541-545页

作者：肖玉平刘新科杨晓光肖夏崔啸天首都医科大学附属北京天坛医院北京100160

目的分析老年急性脑梗死(ACI)患者血清长链非编码RNA染色体X失活特异转录本(lncRNA XIST)、长链非编码RNA性别决定相关基因簇2重叠转录本(lncRNA SOX2OT)水平变化,并评估其预后价值。方法选取首都医科大学附属北京天坛医院2021年2月-202... 详细信息

目的分析老年急性脑梗死(ACI)患者血清长链非编码RNA染色体X失活特异转录本(lncRNA XIST)、长链非编码RNA性别决定相关基因簇2重叠转录本(lncRNA SOX2OT)水平变化,并评估其预后价值。方法选取首都医科大学附属北京天坛医院2021年2月-2023年2月收治的154例老年ACI患者为研究对象,采用改良Rankin量表(mRS)评分将患者分为预后良好组(n=111)和预后不良组(n=43),另选取同期健康体检者160人为健康组。采用qRT-PCR分析患者血清lncRNA XIST、lncRNA SOX2OT水平,采用多因素logistic回归分析ACI患者预后不良影响因素;采用Spearman法进行相关性分析。采用受试者工作特征(ROC)曲线分析血清lncRNA XIST、lncRNA SOX2OT水平对ACI患者预后的诊断价值。结果预后不良组lncRNA XIST[(0.47±0.09)vs.(0.61±0.09)vs.(1.01±0.27)]水平低于良好组和健康组,lncRNA SOX2OT[(2.16±0.37)vs.(1.73±0.33)vs.(1.03±0.21)]水平高于良好组和健康组,差异均有统计学意义(F=190.845、367.704,P均<0.001)。预后良好组m RS评分[(1.52±0.37)分vs.(3.79±0.45)分]、NIHSS评分[(3.57±1.11)分vs.(9.72±3.12)分]显著低于预后不良组,差异均有统计学意义(t=32.097、18.092,P均<0.001)。lncRNA XIST与mRS评分、NIHSS评分成负相关(r=-0.503、-0.479,P均<0.001),lncRNA SOX2OT与mRS评分、NIHSS评分成正相关(r=0.525、0.493,P均<0.001)。lncRNA XIST、lncRNA SOX2OT是ACI患者预后的影响因素(P均<0.001)。血清lncRNA XIST、lncRNA SOX2OT联合诊断ACI患者预后的曲线下面积(AUC)为0.920,显著优于单独诊断(Z_(lncRNA XIST vs.联合)=2.123,P=0.034;Z_(lncRNA SOX2OT vs.联合)=2.108,P=0.035),联合诊断的敏感性为90.99%,特异性为79.07%。结论ACI患者血清lncRNA XIST水平下调,lncRNA SOX2OT水平上调,与患者预后密切相关。

关键词：急性脑梗死长链非编码RNA染色体X失活特异转录本长链非编码RNA性别决定相关基因簇2重叠转录本

Normally-off AlGaN/GaN heterojunction field-effect transistors with in-situ AlN gate insulator

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Chinese Physics B 2022年第12期31卷 526-530页

作者： Taofei Pu Shuqiang liu Xiaobo Li Ting-Ting Wang Jiyao Du liuan Li Liang He xinke liu Jin-Ping Ao Hanshan Normal University Chaozhou 521041China No.5 Electronics Research Institute of the Ministry of Industry and Information Technology Guangzhou 510610China Shenzhen University Shenzhen 518000China School of Microelectronics Xidian UniversityXi’an 710071China School of Automation and Electrical Engineering Shenyang Ligong UniversityShenyang 110159China Yibin Research Institute Jilin UniversityYibin 644000China

AlGaN/GaN heterojunction field-effect transistors(HFETs)with p-GaN cap layer are developed for normally-off operation,in which an in-situ grown AlN layer is utilized as the gate *** with the SiNxgate insulator,the AlN/p-GaN interface presents a more obvious energy band bending and a wider depletion region,which helps to positively shift the threshold *** addition,the relatively large conduction band offset of AlN/p-GaN is beneficial to suppress the gate leakage current and enhance the gate breakdown *** to the introduction of AlN layer,normally-off p-GaN capped AlGaN/GaN HFET with a threshold voltage of 4 V and a gate swing of 13 V is ***,the field-effect mobility is approximately 1500 cm^(2)·V^(-1)·s^(-1)in the 2DEG channel,implying a good device performance.

关键词： AlGaN/GaN HFET normally-off in-situ AlN metal-insulator-semiconductor