Introducing voids around the interlayer of AlN by high temperature annealing

作     者：Jianwei Ben Jiangliu Luo Zhichen Lin Xiaojuan Sun Xinke Liu Xiaohua Li 贲建伟;罗江流;林之晨;孙晓娟;刘新科;黎晓华

作者机构：College of Materials Science and EngineeringShenzhen University-Hanshan Normal University Postdoctoral WorkstationShenzhen UniversityShenzhen 518060China College of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen 518060China State Key Laboratory of Luminescence and ApplicationsChangchun Institute of OpticsFine Mechanics and PhysicsChinese Academy of SciencesChangchun 130033China 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2022年第31卷第7期

页      面：448-453页

核心收录：

学科分类：081702[工学-化学工艺] 08[工学] 0817[工学-化学工程与技术] 0803[工学-光学工程] 

基　　金：the National Key Research and Development Program of China(Grant No.2017YFB0404100) the National Natural Science Foundation of China(Grant Nos.61827813,61974144,and 62004127) the Key Research Program of the Chinese Academy of Sciences(Grant No.XDPB22) the Key-Area Research and Development Program of Guangdong Province,China(Grant Nos.2020B010169001 and 2020B010174003) the Science and Technology Foundation of Shenzhen(Grant No.JSGG20191129114216474) 

主　　题：AlN template AlN interlayer voids high-temperature annealing 

摘      要：Introducing voids into AlN layer at a certain height using a simple method is meaningful but *** this work,the AlN/sapphire template with AlN interlayer structure was designed and grown by metal-organic chemical vapor ***,the AlN template was annealed at 1700℃for an hour to introduce the *** was found that voids were formed in the AlN layer after high-temperature annealing and they were mainly distributed around the AlN ***,the dislocation density of the AlN template decreased from 5.26×10^(9)cm^(-2)to 5.10×10^(8)cm^(-2).This work provides a possible method to introduce voids into AlN layer at a designated height,which will benefit the design of AlN-based devices.