检索结果-南通市图书馆

Electronics based on two-dimensional materials:Status and outlook

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

Nano Research 2021年第6期14卷 1752-1767页

作者： Senfeng Zeng Zhaowu Tang chunsen liu Peng Zhou State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghai200433China School of Computer Science Fudan UniversityShanghai200433China

Since Moore’s law in the traditional semiconductor industry is facing shocks,More Moore and More than Moore are proposed as two paths to maintain the development of the semiconductor industry by adopting new architectures or new materials,in which the former is committed to the continued scaling of transistors for performance enhancement,and the latter pursues the realization of functional diversification of electronic ***-dimensional(2D)materials are supposed to play an important role in these two *** More Moore,the ultimate thin thickness and the dangling-bond-free surface of 2D channels offer excellent gate electrostatics while avoiding the degradation of carrier mobility at the same time,so that the transistors can be further scaled down for higher *** More than Moore,devices based on 2D materials can well meet the requirements of electronic systems for functional diversity,like that they can operate at high frequency,exhibit excellent sensitivity to the changes in the surroundings at room temperature,have good mechanical flexibility,and so *** this review,we present the application of 2D materials in More Moore and More than Moore domains of electronics,outlining their potential as a technological option for logic electronics,memory electronics,radio-frequency electronics,sensing electronics,and flexible electronics.

关键词： More Moore More Than Moore two-dimensional materials transition metal dichalcogenides(TMDs)

Nanoreactors derived from silica-protection-assisted metal-organic framework

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Chinese Chemical Letters 2020年第9期31卷 2207-2210页

作者： Ling Jin Xiaxia Li chunsen liu Huan Pang School of Chemistry and Chemical Engineering Guangling CollegeYangzhou UniversityYangzhou 225009China Henan Provincial Key Laboratory of Surface&Interface Science Zhengzhou University of Light IndustryZhengzhou 450002China

The construction of highly stable and regular nanoreactors is a major *** this work,we use a facile template protection method to obtain ZIF-67@SiO2(JS) and to encapsulate metal oxide nanoparticles(Co3O4) into nanoreactors(SiO2).ZIF-67 crystals provide a cobalt species;SiO2 was first used as a protective layer of ZIF-67 and then as a nanoreactor for metastable metal oxide *** this basis,Co3O4@SiO2 with dodecahedron morphology were synthesized by calcining JS at different tempe ratures,followed by a hydrothermal reaction to obtain Co3(OH)***,CoSx and CoP-SiO2 were fabricated through sulfuration and *** results in this work show that nanoreactors derived from metal-organic frameworks(MOFs) with a rational structure have broad development prospects.

关键词： Core-shell structure Metal oxide nanoparticles Co3(OH)4Si2O5 Nanoreactors Silicon shell

In-memory computing to break the memory wall

在线全文

学校读者我要写书评

暂无评论

Chinese Physics B 2020年第7期29卷 28-48页

作者： Xiaohe Huang chunsen liu Yu-Gang Jiang Peng Zhou State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghai 200433China School of Computer Science Fudan UniversityShanghai 200433China

Facing the computing demands of Internet of things(IoT)and artificial intelligence(AI),the cost induced by moving the data between the central processing unit(CPU)and memory is the key problem and a chip featured with flexible structural unit,ultra-low power consumption,and huge parallelism will be ***-memory computing,a non-von Neumann architecture fusing memory units and computing units,can eliminate the data transfer time and energy consumption while performing massive parallel *** in-memory computing schemes modified from different memory technologies have shown orders of magnitude improvement in computing efficiency,making it be regarded as the ultimate computing *** we review the state-of-the-art memory device technologies potential for in-memory computing,summarize their versatile applications in neural network,stochastic generation,and hybrid precision digital computing,with promising solutions for unprecedented computing tasks,and also discuss the challenges of stability and integration for general in-memory computing.

关键词： in-memory computing non-volatile memory device technologies crossbar array

Temperature-switching logic in MoS2 single transistors

在线全文

学校读者我要写书评

暂无评论

Chinese Physics B 2020年第9期29卷 464-469页

作者： Xiaozhang Chen Lehua Gu Lan liu Huawei Chen Jingyu Li chunsen liu Peng Zhou The State Key Laboratory of ASIC and System Department of MicroelectronicsFudan UniversityShanghai 200433China Department of Physics State Key Laboratory of Surface PhysicsKey Laboratory of Micro and Nano Photonic Structures(Ministry of Education)and Institute for Nanoelectronic Devices and Quantum ComputingFudan UniversityShanghai 200433China School of Computer Science Fudan UniversityShanghai 200433China

Due to their unique characteristics,two-dimensional(2D)materials have drawn great attention as promising candidates for the next generation of integrated circuits,which generate a calculation unit with a new working mechanism,called a logic *** figure out the application prospects of logic transistors,exploring the temperature dependence of logic characteristics is *** this work,we explore the temperature effect on the electrical characteristic of a logic transistor,finding that changes in temperature cause transformation in the calculation:logical output converts from‘AND’at 10 K to‘OR’at 250 *** transformation phenomenon of temperature regulation in logical output is caused by energy band which decreases with increasing *** the experiment,the indirect band gap of MoS2 shows an obvious decrease from 1.581 eV to 1.535 eV as the temperature increases from 10 K to 250 *** change of threshold voltage with temperature is consistent with the energy band,which confirms the theoretical ***,as a promising material for future integrated circuits,the demonstrated characteristic of 2D transistors suggests possible application for future functional devices.

关键词： molybdenum disulfide(MoS2) logic temperature dependence mobility

Ultrafast flash memory with large self-rectifying ratio based on atomically thin MoS_(2)-channel transistor

在线全文

学校读者我要写书评

暂无评论

Materials Futures 2022年第2期1卷 153-162页

作者： Liwei liu Yibo Sun Xiaohe Huang chunsen liu Zhaowu Tang Senfeng Zeng David Wei Zhang Shaozhi Deng Peng Zhou Frontier Institute of Chip and System Fudan UniversityShanghai 200433People’s Republic of China State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghai 200433People’s Republic of China State Key Laboratory of Optoelectronic Materials and Technologies Guangdong Province Key Laboratory of Display Material and TechnologySchool of Electronics and Information TechnologySun Yat-sen UniversityGuangzhou 510275People’s Republic of China

Flash memory with high operation speed and stable retention performance is in great demand to meet the requirements of big *** addition,the realisation of ultrafast flash memory with novel functions offers a means of combining heterogeneous components into a homogeneous device without considering impedance *** report proposes a 20 ns programme flash memory with 10^(8) self-rectifying ratios based on a 0.65 nm-thick MoS_(2)-channel transistor.A high-quality van der Waals heterojunction with a sharp interface is formed between the Cr/Au metal floating layer and h-BN tunnelling *** addition,the large rectification ratio and low ideality factor(n=1.13)facilitate the application of the MoS_(2)-channel flash memory as a bit-line select ***,owing to the ultralow MoS_(2)/h-BN heterojunction capacitance(50 fF),the memory device exhibits superior performance as a high-frequency(up to 1 MHz)sine signal *** results pave the way toward the potential utilisation of multifunctional memory devices in ultrafast two-dimensional NAND-flash applications.

关键词： ultra-fast flash memory metal floating gate atomic sharp interface atomic thin channel self-rectification transistor high-frequency rectifier

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

█████

Journal of Semiconductors 2021年第2期42卷 106-107页

作者： Zhaowu Tang chunsen liu Senfeng Zeng Xiaohe Huang Liwei liu Jiayi Li Yugang Jiang David Wei Zhang Peng Zhou State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghai 200433China School of Computer Science Fudan UniversityShanghai 200433China

The recently reported quasi-nonvolatile memory based on semi-floating gate architecture has attracted extensive attention thanks to its potential to bridge the large gap between volatile and nonvolatile ***,the further extension of the refresh time in quasi-nonvolatile memory is limited by the charge leakage through the p-n ***,based on the density of states engineered van der Waals heterostructures,the leakage of electrons from the floating gate to the channel is greatly *** a result,the refresh time is effectively extended to more than 100 s,which is the longest among all previously reported quasi-nonvolatile *** work provides a new idea to enhance the refresh time of quasi-nonvolatile memory by the density of states engineering and demonstrates great application potential for high-speed and low-power memory technology.

关键词： quasi-nonvolatile memory refresh time density of states engineering

Enhancement of refresh time in quasi-nonvolatile memory by the density of states engineering

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Journal of Semiconductors 2021年第2期42卷 100-107页

关键词： quasi-nonvolatile memory refresh time density of states engineering

在线全文

学校读者我要写书评

暂无评论

原子晶体非易失存储

中国科学：物理学、力学、天文学 2016年第10期46卷 100-118页

作者：刘春森周鹏张卫复旦大学微电子学院专用集成电路和系统国家重点实验室上海200433

多功能低功耗芯片中存储、计算与通讯功能各模块的占用面积、数据交换速率等因素已经成为集成电路发展的瓶颈问题.可满足大数据核内传输速率的未来系统架构中高密度高性能存储技术需具备超低功耗、超小器件尺寸以及快速写入及非易失特性... 详细信息

多功能低功耗芯片中存储、计算与通讯功能各模块的占用面积、数据交换速率等因素已经成为集成电路发展的瓶颈问题.可满足大数据核内传输速率的未来系统架构中高密度高性能存储技术需具备超低功耗、超小器件尺寸以及快速写入及非易失特性.未来存储技术包括采用新原理器件例如操控电子跃迁或离子移动代替电子输运、使用新材料以降低热量产生以及新型三维堆叠工艺提高密度.本综述聚焦于新材料特别是二维原子晶体在非易失存储技术中的应用.具有高电子迁移率、极限超薄沟道、超低界面态的二维原子晶体新材料因为其本征厚度约0.6–1.2 nm并具有丰富的能带结构为未来存储技术提供了优秀的解决方案,对器件进一步微缩提高集成度、提高稳定性和扩大应用场景以及开发新型存储器有着巨大潜力,是解决当今存储器功耗和集成度的崭新途径.

关键词：原子晶体二维原子晶体非易失存储器闪存阻变存储器

Memristive switching in the surface of a charge-density-wave topological semimetal

在线全文

学校读者我要写书评

暂无评论

Science Bulletin 2024年第13期69卷 2042-2049页

作者： Jianwen Ma Xianghao Meng Binhua Zhang Yuxiang Wang Yicheng Mou Wenting Lin Yannan Dai Luqiu Chen Haonan Wang Haoqi Wu Jiaming Gu Jiayu Wang Yuhan Du chunsen liu Wu Shi Zhenzhong Yang Bobo Tian Lin Miao Peng Zhou Chun-Gang Duan Changsong Xu Xiang Yuan Cheng Zhang State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing Fudan UniversityShanghai 200433China State Key Laboratory of Precision Spectroscopy East China Normal UniversityShanghai 200241China Key Laboratory of Computational Physical Sciences(Ministry of Education) Institute of Computational Physical SciencesState Key Laboratory of Surface PhysicsDepartment of PhysicsFudan UniversityShanghai 200433China Shanghai Qi Zhi Institute Shanghai 200030China School of Physics Southeast UniversityNanjing 211189China Key Laboratory of Polar Materials and Devices(Ministry of Education) Department of ElectronicsEast China Normal UniversityShanghai 200241China Shanghai Center of Brain–inspired Intelligent Materials and Devices East China Normal UniversityShanghai 200241China State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghai 200433China Frontier Institute of Chip and System Fudan UniversityShanghai 200433China Zhangjiang Fudan International Innovation Center Fudan UniversityShanghai 201210China School of Physics and Electronic Science East China Normal UniversityShanghai 200241China

Owing to the outstanding properties provided by nontrivial band topology,topological phases of matter are considered as a promising platform towards low-dissipation electronics,efficient spin-charge conversion,and topological quantum *** ferroelectricity in topological materials enables the non-volatile control of the quantum states,which could greatly facilitate topological electronic ***,ferroelectricity is generally incompatible with systems featuring metallicity due to the screening effect of free *** this study,we report the observation of memristive switching based on the ferroelectric surface state of a topological semimetal(TaSe_(4))*** find that the surface state of(TaSe_(4))2I presents out-of-plane ferroelectric polarization due to surface *** the combination of ferroelectric surface and charge-density-wave-gapped bulk states,an electric-switchable barrier height can be achieved in(TaSe_(4))2I-metal *** employing a multi-terminal-grounding design,we manage to construct a prototype ferroelectric memristor based on(TaSe_(4))2I with on/off ratio up to 103,endurance over 103 cycles,and good retention *** origin of the ferroelectric surface state is further investigated by first-principles calculations,which reveal an interplay between ferroelectricity and band *** emergence of ferroelectricity in(TaSe_(4))2I not only demonstrates it as a rare but essential case of ferroelectric topological materials,but also opens new routes towards the implementation of topological materials in functional electronic devices.

关键词： Topological semimetal Schottky barrier Surface ferroelectricity Memristor