In-memory computing to break the memory wall

作     者：Xiaohe Huang Chunsen Liu Yu-Gang Jiang Peng Zhou 黄晓合;刘春森;姜育刚;周鹏

作者机构：State Key Laboratory of ASIC and SystemSchool of MicroelectronicsFudan UniversityShanghai 200433China School of Computer ScienceFudan UniversityShanghai 200433China 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2020年第29卷第7期

页      面：28-48页

核心收录：

学科分类：08[工学] 081201[工学-计算机系统结构] 0812[工学-计算机科学与技术（可授工学、理学学位）] 

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.61925402 and 61851402) Science and Technology Commission of Shanghai Municipality,China(Grant No.19JC1416600) the National Key Research and Development Program of China(Grant No.2017YFB0405600) Shanghai Education Development Foundation and Shanghai Municipal Education Commission Shuguang Program,China(Grant No.18SG01) 

主　　题：in-memory computing non-volatile memory device technologies crossbar array 

摘      要：Facing the computing demands of Internet of things(IoT)and artificial intelligence(AI),the cost induced by moving the data between the central processing unit(CPU)and memory is the key problem and a chip featured with flexible structural unit,ultra-low power consumption,and huge parallelism will be ***-memory computing,a non-von Neumann architecture fusing memory units and computing units,can eliminate the data transfer time and energy consumption while performing massive parallel *** in-memory computing schemes modified from different memory technologies have shown orders of magnitude improvement in computing efficiency,making it be regarded as the ultimate computing *** we review the state-of-the-art memory device technologies potential for in-memory computing,summarize their versatile applications in neural network,stochastic generation,and hybrid precision digital computing,with promising solutions for unprecedented computing tasks,and also discuss the challenges of stability and integration for general in-memory computing.