Ultrafast flash memory with large self-rectifying ratio based on atomically thin MoS_(2)-channel transistor
作者机构：Frontier Institute of Chip and SystemFudan UniversityShanghai 200433People’s Republic of China State Key Laboratory of ASIC and SystemSchool of MicroelectronicsFudan UniversityShanghai 200433People’s Republic of China State Key Laboratory of Optoelectronic Materials and TechnologiesGuangdong Province Key Laboratory of Display Material and TechnologySchool of Electronics and Information TechnologySun Yat-sen UniversityGuangzhou 510275People’s Republic of China
出 版 物：《Materials Futures》 (材料展望（英文）)
年 卷 期：2022年第1卷第2期
页 面：153-162页
核心收录：
学科分类：08[工学] 0812[工学-计算机科学与技术（可授工学、理学学位）]
基 金：This work was supported by the National Natural Science Foundation of China(Grant Nos.62004042 61925402 61851402 and 61734003).The authors would like to acknowledge the support by the Young Scientist project of the MoE innovation platform.The authors would also like to acknowledge Professor Ning Sheng Xu for the valuable advice on thesis writing
主 题：ultra-fast flash memory metal floating gate atomic sharp interface atomic thin channel self-rectification transistor high-frequency rectifier
摘 要：Flash memory with high operation speed and stable retention performance is in great demand to meet the requirements of big *** addition,the realisation of ultrafast flash memory with novel functions offers a means of combining heterogeneous components into a homogeneous device without considering impedance *** report proposes a 20 ns programme flash memory with 10^(8) self-rectifying ratios based on a 0.65 nm-thick MoS_(2)-channel transistor.A high-quality van der Waals heterojunction with a sharp interface is formed between the Cr/Au metal floating layer and h-BN tunnelling *** addition,the large rectification ratio and low ideality factor(n=1.13)facilitate the application of the MoS_(2)-channel flash memory as a bit-line select ***,owing to the ultralow MoS_(2)/h-BN heterojunction capacitance(50 fF),the memory device exhibits superior performance as a high-frequency(up to 1 MHz)sine signal *** results pave the way toward the potential utilisation of multifunctional memory devices in ultrafast two-dimensional NAND-flash applications.
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