Enhancement of refresh time in quasi-nonvolatile memory by the density of states engineering

作     者：Zhaowu Tang Chunsen Liu Senfeng Zeng Xiaohe Huang Liwei Liu Jiayi Li Yugang Jiang David Wei Zhang Peng Zhou Zhaowu Tang;Chunsen Liu;Senfeng Zeng;Xiaohe Huang;Liwei Liu;Jiayi Li;Yugang Jiang;David Wei Zhang;Peng Zhou

作者机构：State Key Laboratory of ASIC and SystemSchool of MicroelectronicsFudan UniversityShanghai 200433China School of Computer ScienceFudan UniversityShanghai 200433China 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2021年第42卷第2期

页      面：100-107页

核心收录：

学科分类：08[工学] 081201[工学-计算机系统结构] 0812[工学-计算机科学与技术（可授工学、理学学位）] 

基　　金：This work was supported by the National Natural Science Foundation of China(61925402,61851402 and 61734003) Science and Technology Commission of Shanghai Municipality(19JC1416600) National Key Research and Development Program(2017YFB0405600) Shanghai Education Development Foundation and Shanghai Municipal Education Commission Shuguang Program(18SG01) China Postdoctoral Science Foundation(2019M661358,2019TQ0065) 

主　　题：quasi-nonvolatile memory refresh time density of states engineering 

摘      要：The recently reported quasi-nonvolatile memory based on semi-floating gate architecture has attracted extensive attention thanks to its potential to bridge the large gap between volatile and nonvolatile ***,the further extension of the refresh time in quasi-nonvolatile memory is limited by the charge leakage through the p-n ***,based on the density of states engineered van der Waals heterostructures,the leakage of electrons from the floating gate to the channel is greatly *** a result,the refresh time is effectively extended to more than 100 s,which is the longest among all previously reported quasi-nonvolatile *** work provides a new idea to enhance the refresh time of quasi-nonvolatile memory by the density of states engineering and demonstrates great application potential for high-speed and low-power memory technology.