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作     者：Zhaowu Tang Chunsen Liu Senfeng Zeng Xiaohe Huang Liwei Liu Jiayi Li Yugang Jiang David Wei Zhang Peng Zhou 

作者机构：State Key Laboratory of ASIC and SystemSchool of MicroelectronicsFudan UniversityShanghai 200433China School of Computer ScienceFudan UniversityShanghai 200433China 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2021年第42卷第2期

页      面：106-107页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

主　　题：quasi-nonvolatile memory refresh time density of states engineering 

摘      要：The recently reported quasi-nonvolatile memory based on semi-floating gate architecture has attracted extensive attention thanks to its potential to bridge the large gap between volatile and nonvolatile ***,the further extension of the refresh time in quasi-nonvolatile memory is limited by the charge leakage through the p-n ***,based on the density of states engineered van der Waals heterostructures,the leakage of electrons from the floating gate to the channel is greatly *** a result,the refresh time is effectively extended to more than 100 s,which is the longest among all previously reported quasi-nonvolatile *** work provides a new idea to enhance the refresh time of quasi-nonvolatile memory by the density of states engineering and demonstrates great application potential for high-speed and low-power memory technology.