Enhancement of radiation hardness of InP-based HEMT with double Si-doped plane

作     者：Ying-Hui Zhong Bo Yang Ming-Ming Chang Peng Ding Liu-Hong Ma Meng-Ke Li Zhi-Yong Duan Jie Yang Zhi Jin Zhi-Chao Wei 钟英辉;杨博;常明铭;丁芃;马刘红;李梦珂;段智勇;杨洁;金智;魏志超

作者机构：School of Physics and MicroelectronicsZhengzhou UniversityZhengzhou 450001China Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China China Academy of Space TechnologyBeijing 100086China 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2020年第29卷第3期

页      面：455-459页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.11775191,61404115,61434006,and 11475256) the Promotion Funding for Excellent Young Backbone Teacher of Henan Province,China(Grant No.2019GGJS017) 

主　　题：InP-based HEMT anti-radiation proton irradiation Si-doped plane 

摘      要：An anti-radiation structure of In P-based high electron mobility transistor(HEMT) has been proposed and optimized with double Si-doped planes. The additional Si-doped plane under channel layer has made a huge promotion in channel current, transconductance, current gain cut-off frequency, and maximum oscillation frequency of In P-based HEMTs. Moreover, direct current(DC) and radio frequency(RF) characteristic properties and their reduction rates have been compared in detail between single Si-doped and double Si-doped structures after 75-keV proton irradiation with dose of 5× 10^(11) cm^(-2),1× 10^(12) cm^(-2), and 5× 10^(12) cm^(-2). DC and RF characteristics for both structures are observed to decrease gradually as irradiation dose rises, which particularly show a drastic drop at dose of 5× 10^(12) cm^(-2). Besides, characteristic degradation degree of the double Si-doped structure is significantly lower than that of the single Si-doped structure, especially at large proton irradiation dose. The enhancement of proton radiation tolerance by the insertion of another Si-doped plane could be accounted for the tremendously increased native carriers, which are bound to weaken substantially the carrier removal effect by irradiation-induced defects.