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Enhancement of radiation hardness of InP-based HEMT with double si-doped plane

Chinese Physics B 2020年第3期29卷 455-459页

作者： Ying-Hui Zhong Bo Yang Ming-Ming Chang Peng Ding Liu-Hong Ma Meng-Ke Li Zhi-Yong Duan Jie Yang Zhi Jin Zhi-Chao Wei School of Physics and Microelectronics Zhengzhou UniversityZhengzhou 450001China Institute of Microelectronics Chinese Academy of SciencesBeijing 100029China China Academy of Space Technology Beijing 100086China

An anti-radiation structure of In P-based high electron mobility transistor(HEMT) has been proposed and optimized with double si-doped planes. The additional si-doped plane under channel layer has made a huge promotion in channel current, transconductance, current gain cut-off frequency, and maximum oscillation frequency of In P-based HEMTs. Moreover, direct current(DC) and radio frequency(RF) characteristic properties and their reduction rates have been compared in detail between single si-doped and double si-doped structures after 75-keV proton irradiation with dose of 5× 10^(11) cm^(-2),1× 10^(12) cm^(-2), and 5× 10^(12) cm^(-2). DC and RF characteristics for both structures are observed to decrease gradually as irradiation dose rises, which particularly show a drastic drop at dose of 5× 10^(12) cm^(-2). Besides, characteristic degradation degree of the double si-doped structure is significantly lower than that of the single si-doped structure, especially at large proton irradiation dose. The enhancement of proton radiation tolerance by the insertion of another si-doped plane could be accounted for the tremendously increased native carriers, which are bound to weaken substantially the carrier removal effect by irradiation-induced defects.

关键词： InP-based HEMT anti-radiation proton irradiation si-doped plane

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Electronic structures and optical properties of si-and Sn-doped β-Ga_2O_3: A GGA+U study

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Chinese Physics B 2019年第1期28卷 502-510页

作者： Jun-Ning Dang Shu-wen Zheng Lang Chen Tao Zheng[] Institute of Opto-electronic Materials and Technology South China Normal University

The electronic structures and optical properties of β-Ga_2O_3 and si-and Sn-doped β-Ga_2O_3 are studied using the GGA + U method based on density functional theory. The calculated bandgap and Ga 3d-state peak of β-Ga_2O_3 are in good agreement with experimental results. si-and Sn-doped β-Ga_2O_3 tend to form under O-poor conditions, and the formation energy of si-doped β-Ga_2O_3 is larger than that of Sn-doped β-Ga_2O_3 because of the large bond length variation between Ga–O and si–O. si-and Sn-doped β-Ga_2O_3 have wider optical gaps than β-Ga_2O_3, due to the Burstein–Moss effect and the bandgap renormalization effect. si-doped β-Ga_2O_3 shows better electron conductivity and a higher optical absorption edge than Sn-doped β-Ga_2O_3, so si is more suitable as a dopant of n-type β-Ga_2O_3, which can be applied in deep-UV photoelectric devices.

关键词： density functional theory GGA + U method si-doped β-Ga2O3 Sn-doped β-Ga2O3 electronic structure optical property

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Formation of Al-si Composite Oxide Film by Hydrolysis Precipitation and Anodizing

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Journal of Electronic Science and Technology of China 2007年第4期5卷 289-292页

作者： Zhe-Sheng Feng Ying-Jie Xia Jia Ding Jin-Ju Chen State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China （UESTC） Chengdu 610054 China

This paper presents a new technique in the high dielectric constant composite oxide film preparation. On the basis of nano-compsite high dielectric constant aluminum oxide fdm growth technology, a new idea of adulterating si oxide species into the aluminum composite film was proposed. As a result, the specific capacitance and withstanding voltage of the composite oxide film formed at the anodizing voltage of 20V are enhanced, and the leakage current of the aluminum composite oxide fdm is reduced through incorporation of si oxide species.

关键词： Aluminum electric foil si-doped specific capacitance withstanding voltage.

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