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120-nm gate-length In_(0.7)Ga_(0.3)As/In_(0.52)Al_(0.48)As InP-based hemt

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Journal of Semiconductors 2010年第7期31卷 46-48页

作者：黄杰郭天义张海英徐静波付晓君杨浩牛洁斌 Institute of Microelectronics Chinese Academy of Sciences School of Physical Science and Technology Southwest University

120 nm gate-length In_（0.7）Ga_（0.3）As/In_（0.52）Al_（0.48） As InP-based high electron mobility transitions（hemts） are fabricated by a new T-shaped gate electron beam lithograph（EBL） technology,which is achieved by the use of a PMMA/PMGI/ZEP520/PMGI four-layer photoresistor *** devices also demonstrate excellent DC and RF characteristics：the transconductance,maximum saturation drain-to-source current,threshold voltage,maximum current gain frequency,and maximum power-gain cutoff frequency of InGaAs/InAlAs hemts is 520 mS/mm,446 mA/mm, -1.0 V,141 GHz and 120 GHz,*** material structure and all the device fabrication technology in this work were developed by our group.

关键词： hemt InP InGaAs/InAlAs cutoff frequency T-shaped gate

Photoresponse and trap characteristics of transparent AZO-gated AlGaN/GaN hemt

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Chinese Physics B 2016年第10期25卷 525-528页

作者：王冲赵梦荻何云龙郑雪峰张坤魏晓晓毛维马晓华张进成郝跃 Key Laboratory of Wide Band Gap Semiconductor Materials and Devices The School of Microelectronics Xidian University

AZO-gated and Ni/Au-gated AlGaN/GaN hemts are fabricated successfully,and an excellent transparency of AZOgated electrode is *** a negative gate bias stress acts on two kinds of the devices,their photoresponse characteristics are investigated by using laser sources with different *** effect of photoresponse on AZO-gated electrode device is more obvious than on Ni/Au-gated electrodes *** electrons are trapped in the AlGaN barrier of AZO-gated hemt after it has experienced negative gate bias stress,and then the electrons can be excited effectively after it has been illuminated by the light with certain ***,the trap state density DTand the time constantτTof the AZO-gated Schottky contact are extracted by fitting the measured parallel conductance in a frequency range from10 kHz to 10 *** constants of the trap range from about 0.35 μs to 20.35 μs,and the trap state density increased from1.93×l013eV 1·cm~2 at an energy of 0.33 eV to 3.07×1011eV~1·cm~2 at an energy of 0.40 ***,the capacitance and conductance measurements are used to characterize the trapping effects under different illumination conditions in AZO-gated *** deep trap states’ density is confirmed under the illumination of short wavelength light.

关键词： AlGaN/GaN hemt AZO trap

Enhancement of radiation hardness of InP-based hemt with double Si-doped plane

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Chinese Physics B 2020年第3期29卷 455-459页

作者： Ying-Hui Zhong Bo Yang Ming-Ming Chang Peng Ding Liu-Hong Ma Meng-Ke Li Zhi-Yong Duan Jie Yang Zhi Jin Zhi-Chao Wei School of Physics and Microelectronics Zhengzhou UniversityZhengzhou 450001China Institute of Microelectronics Chinese Academy of SciencesBeijing 100029China China Academy of Space Technology Beijing 100086China

An anti-radiation structure of In P-based high electron mobility transistor(hemt) has been proposed and optimized with double Si-doped planes. The additional Si-doped plane under channel layer has made a huge promotion in channel current, transconductance, current gain cut-off frequency, and maximum oscillation frequency of In P-based hemts. Moreover, direct current(DC) and radio frequency(RF) characteristic properties and their reduction rates have been compared in detail between single Si-doped and double Si-doped structures after 75-keV proton irradiation with dose of 5× 10^(11) cm^(-2),1× 10^(12) cm^(-2), and 5× 10^(12) cm^(-2). DC and RF characteristics for both structures are observed to decrease gradually as irradiation dose rises, which particularly show a drastic drop at dose of 5× 10^(12) cm^(-2). Besides, characteristic degradation degree of the double Si-doped structure is significantly lower than that of the single Si-doped structure, especially at large proton irradiation dose. The enhancement of proton radiation tolerance by the insertion of another Si-doped plane could be accounted for the tremendously increased native carriers, which are bound to weaken substantially the carrier removal effect by irradiation-induced defects.

关键词： InP-based hemt anti-radiation proton irradiation Si-doped plane

A 4.69-W/mm output power density InAlN/GaN hemt grown on sapphire substrate

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Journal of Semiconductors 2011年第12期32卷 68-71页

作者：刘波冯志红张森敦少博尹甲运李佳王晶晶张效帏房玉龙蔡树军 Science and Technology on ASIC Laboratory Hebei Semiconductor Research Institute School of Materials Science and Engineering Harbin Institute of Technology

We report high performance InA1N/GaN hemts grown on sapphire substrates. The lattice-matched InA1N/GaN hemt sample showed a high 2DEG mobility of 1210 cmZ/（V.s） under a sheet density of 2.6 × 10^13 cm^-2. Large signal load-pull measurements for a （2 × 100 μm） x 0.25 μm device have been conducted with a drain voltage of 24 V at 10 GHz. The presented results confirm the high performances reachable by InAIN- based technology with an output power density of 4.69 W/ram, a linear gain of 11.8 dB and a peak power-added efficiency of 48%. This is the first report of high performance InA1N/GaN hemts in China's Mainland.

关键词： InA1N/GaN hemt output power density metal-organic chemical vapor deposition

RF and microwave characteristics of a 10 nm thick InGaN-channel gate recessed hemt

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Journal of Semiconductors 2013年第11期34卷 36-41页

作者： T.R.Lenka G.N.Dash A.K.Panda Department of Electronics and Communication Engineering National Institute of Technology Silchar School of Physics Sambalpur University National Institute of Science and Technology

A new depletion-mode gate recessed A1GaN/InGaN/GaN-high electron mobility transistor （hemt） with 10 nm thickness of InGaN-channel is proposed. A growth of A1GaN over GaN leads to the formation of two- dimensional electron gas （2DEG） at the heterointerface. High 2DEG density （ns） is achieved at the heterointerface due to a strain induced piezoelectric effect between A1GaN and GaN layers. The electrons are confined in the InGaN-channel without spilling over into the buffer layer, which also reduces the buffer leakage current. From the input transfer characteristics the threshold voltage is obtained as -4.5 V and the device conducts a current of 2 A/mm at a drain voltage of 10 V. The device also shows a maximum output current density of 1.8 A/ram at Vds of 3 V. The microwave characteristics like transconductance, cut-off frequency, max frequency of oscillation and Mason＇s Unilateral Gain of the device are studied by AC small-signal analysis using a two-port network. The stability and power performance of the device are analyzed by the Smith chart and polar plots respectively. To our knowledge this proposed InGaN-channel hemt structure is the first of its kind.

关键词： 2DEG hemt InGaN microwave

Fabrication of a 120 nm gate-length lattice-matched InGaAs/InAlAs InP-based hemt

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Journal of Semiconductors 2010年第9期31卷 45-48页

作者：黄杰郭天义张海英徐静波付晓君杨浩牛洁斌 Institute of Microelectronics Chinese Academy of Sciences School of Physical Science and Technology Southwest University

A new PMMA/PMGI/ZEP520/PMGI four-layer resistor electron beam lithography technology is successfully developed and used to fabricate a 120 nm gate-length lattice-matched In_（0.53）Ga_（0.47）As/In_（0.52）Al_（0.48） As InP-based hemt,of which the material structure is successfully designed and optimized by our group.A 980 nm ultra-wide T-gate head,which is nearly as wide as 8 times the gatefoot（120 nm）,is successfully obtained,and the excellent T-gate profile greatly reduces the parasitic resistance and capacitance effect and effectively enhances the RF performances. These fabricated devices demonstrate excellent DC and RF performances such as a maximum current gain frequency of 190 GHz and a unilateral power-gain gain frequency of 146 GHz.

关键词： hemt InP InGaAs/InAlAs cutoff frequency T-shaped gate technology

An Ultrathin AlGaN Barrier Layer MIS-hemt Structure for Enhancement-Mode Operation

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Chinese Physics Letters 2013年第2期30卷 243-246页

作者： QUAN Si MA Xiao-Hua ZHENG Xue-Feng HAO Yue School of Electronics and Control Engineering Chang'an UniversityXi'an 710064 School of Technical Physics Xidian UniversityXi'an 710071 Key Laboratory of Wide Band Gap Semiconductor Materials and Devices Xidian UniversityXi'an 710071

A GaN-based enhancement-mode(E-Mode)metal-insulator-semiconductor(MIS)high electron mobility transistor(hemt)with a 2 nm/5 nm/1.5nm-thin GaN/AlGaN/AlN barrier is *** find that the formation of a two-dimensional electron gas(2DES)in the GaN/AlGaN/AlN/GaN heterostructure can be controlled by the presence of the plasma-enhanced chemical-vapor deposition(PECVD)Si_(3)N_(4) on the barrier layer,and the degree of decrease in sheet resistance R_(sh) is dependent on the Si_(3)N_(4) *** choose 13 nm Si_(3)N_(4) as the gate insulator to decrease gate current and to improve the threshold voltage of *** selective etching of the passivation Si_(3)N_(4) under gate and over fluorine plasma treatment,the MIS-hemt exhibits a high threshold voltage of 1.8 *** maximum drain current Id,max and the maximum transconductance are 810 mA/mm and 190 mS/mm,*** devices show a wide operation range of 4.5 V.

关键词： hemt barrier MIS

Performance analysis of 20 nm gate-length In_(0:2)Al_(0:8)N/GaN hemt with Cu-gate having a remarkable high I_(ON)/I_(OFF)ratio

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Journal of Semiconductors 2014年第6期35卷 26-31页

作者： A.Bhattacharjee T.R.Lenka Department of Electronics and Communication Engineering National Institute of Technology Silchar

： We propose a new structure of InxAll-xN/GaN high electron mobility transistor （hemt） with gate length of 20 nm. The threshold voltage of this hemt is achieved as -0.472 V. In this device the InA1N barrier layer is intentionally n-doped to boost the ION/IOFF ratio. The InAlN layer acts as donor barrier layer for this hemt which exhibits an ION = 10-4.3 A and a very low IOFF = 10-14.4 A resulting in an ION/IoFF ratio of 1010.1. We compared our obtained results with the conventional InAlN/GaN hemt device having undoped barrier and found that the proposed device has almost l0s times better ION/IOFF ratio. Further, the mobility analysis in GaN channel of this proposed hemt structure along with DC analysis, C-V and conductance characteristics by using small-signal analysis are also presented in this paper. Moreover, the shifts in threshold voltage by DIBL effect and gate leakage current in the proposed hemt are also discussed. InAlN was chosen as the most preferred barrier layer as a replacement of AlGaN for its excellent thermal conductivity and very good scalability.

关键词： C-V characteristics DIBL GaN hemt ION/IOFF mobility

An 88 nm gate-length In_(0.53)Ga_(0.47)As/In_(0.52)Al_(0.48)As InP-based hemt with f_(max) of 201 GHz

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Journal of Semiconductors 2012年第7期33卷 39-42页

作者：钟英辉王显泰苏永波曹玉雄金智张玉明刘新宇 Microelectronics Institute Xidian University Institute of Microelectronics Chinese Academy of Sciences

An 88 nm gate-length In0.53Ga0.47As/In0.52Alo.48As InP-based high electron mobility transistor （hemt） was successfully fabricated with a gate width of 2× 50 μm and source-drain space of 2.4μm. The T-gate was defined by electron beam lithography in a trilayer of PMMA/A1/UVIII. The exposure dose and the development time were optimized, and followed by an appropriate residual resist removal process. These devices also demonstrated excellent DC and RF characteristics： the extrinsic maximum transconductance, the full channel cur- rent, the threshold voltage, the current gain cutoff frequency and the maximum oscillation frequency of the hemts were 765 mS/mm, 591 mA/mm, -0.5 V, 150 GHz and 201 GHz, respectively. The hemts are promising for use in millimeter-wave integrated circuits.

关键词： hemt gate-length gate recess InP InA1As/InGaAs