检索结果-南通市图书馆

Bio-Design and Manufacturing 2024年第4期7卷 428-438页

作者： Bowen Zhong Hao Xu Xiaokun Qin Lingchen Liu Hailong Wang Lili Wang State Key laboratory for Superlattices and Microstructures Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of materials Science and Optoelectronic Engineering University of Chinese Academy of SciencesBeijing 100049China

Sweat loss monitoring is important for understanding the body’s thermoregulation and hydration status,as well as for comprehensive sweat *** recent advances,developing a low-cost,scalable,and universal method for the fabrication of colorimetric microfluidics designed for sweat loss monitoring remains *** this study,we propose a novel laserengraved surface roughening strategy for various flexible *** process permits the construction of microchannels that show distinct structural reflectance changes before and after sweat *** leveraging these unique optical properties,we have developed a fully laser-engraved microfluidic device for the quantification of naked-eye sweat *** sweat loss sensor is capable of a volume resolution of 0.5µL and a total volume capacity of 11µL,and can be customized to meet different performance ***,we report the development of a crosstalk-free dual-mode sweat microfluidic system that integrates an Ag/AgCl chloride sensor and a matching wireless measurement flexible printed circuit *** integrated system enables the real-time monitoring of colorimetric sweat loss signals and potential ion concentration signals without ***,we demonstrate the potential practical use of this microfluidic sweat loss sensor and its integrated system for sports medicine via on-body studies.

关键词： Sweat loss sensor Microfluidic design Structural reflectance Dual-mode integration Crosstalk-free

Nanoscale cathodoluminescence spectroscopy probing the nitride quantum wells in an electron microscope

在线全文

学校读者我要写书评

暂无评论

Chinese Physics B 2024年第3期33卷 144-149页

作者：刘哲彤刘秉尧梁冬冬李晓梅李晓敏陈莉朱瑞徐军魏同波白雪冬高鹏 Electron Microscopy laboratory School of PhysicsPeking UniversityBeijing 100871China Academy for Advanced Interdisciplinary studies Peking UniversityBeijing 100871China Research and development Center for Semiconductor Lighting Technology Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Beijing National laboratory for Condensed Matter Physics Institute of PhysicsChinese Academy of SciencesBeijing 100190China International Center for Quantum materials Peking UniversityBeijing 100871China

To gain further understanding of the luminescence properties of multiquantum wells and the factors affecting them on a microscopic level,cathodoluminescence combined with scanning transmission electron microscopy and spectroscopy was used to measure the luminescence of In_(0.15)Ga_(0.85)N five-period multiquantum *** lattice-composition-energy relationship was established with the help of energy-dispersive x-ray spectroscopy,and the bandgaps of In_(0.15)Ga_(0.85)N and GaN in multiple quantum wells were extracted by electron energy loss spectroscopy to understand the features of cathodoluminescence *** luminescence differences between different periods of multiquantum wells and the effects of defects such as composition fluctuation and dislocations on the luminescence of multiple quantum wells were *** study establishing the direct relationship between the atomic structure of In_(x)Ga_(1-x)N multiquantum wells and photoelectric properties provides useful information for nitride applications.

关键词： nitride multiquantum wells defect cathodoluminescence scanning transmission electron microscopy

Enhanced High-Temperature Energy Storage Performance of All-Organic Composite Dielectric via Constructing Fiber-Re in forced Structure

在线全文

学校读者我要写书评

暂无评论

Energy & Environmental materials 2024年第2期7卷 299-307页

作者： Mengjia Feng Yu Feng Changhai Zhang Tiandong Zhang Xu Tong Qiang Gao Qingguo Chen Qingguo Chi Key laboratory of Engineering dielectrics and Its Application Ministry of EducationHarbin University of Science and TechnologyHarbin 150080China School of Electrical and Electronic Engineering Harbin University of Science and TechnologyHarbin 150080China

Optimizing the high-temperature energy storage characteristics of energy storage dielectrics is of great significance for the development of pulsed power devices and power control *** a polymer with a higher glass transition temperature(T_(g))as the matrix is one of the effective ways to increase the upper limit of the polymer operating ***,current high-T_(g)polymers have limitations,and it is difficult to meet the demand for high-temperature energy storage dielectrics with only one *** example,polyetherimide has high-energy storage efficiency,but low breakdown strength at high *** has high corona resistance,but low high-temperature energy storage *** this work,combining the advantages of two polymer,a novel high-T_(g)polymer fiber-reinforced microstructure is *** is designed as extremely fine fibers distributed in the composite dielectric,which will facilitate the reduction of high-temperature conductivity loss for *** the same time,due to the high-temperature resistance and corona resistance of polyimide,the high-temperature breakdown strength of the composite dielectric is *** the polyimide content with the best high-temperature energy storage characteristics is determined,molecular semiconductors(ITIC)are blended into the polyimide fibers to further improve the high-temperature ***,excellent high-temperature energy storage properties are *** 0.25 vol%ITIC-polyimide/polyetherimide composite exhibits high-energy density and high discharge efficiency at 150℃(2.9 J cm^(-3),90%)and 180℃(2.16 J cm^(-3),90%).This work provides a scalable design idea for high-performance all-organic high-temperature energy storage dielectrics.

关键词： all-organic energy storage density high-temperature high-temperature breakdown strength

Performance Study of a Quadratic Boost Converter

在线全文

学校读者我要写书评

暂无评论

Circuits and Systems 2024年第2期15卷 13-27页

作者： Modou Badiane Prince Abdoul Aziz Honadia Oumar Diallo Sadio Fabé Idrissa Barro Department of Physics Semiconductors and Solar Energy Laboratory Faculty of Science and Technique Cheikh Anta Diop University Dakar Senegal Renewable Thermal Energy laboratory Kaya University Centre Ouagadougou Burkina Faso

Energy is the driving force behind all economic and industrial development. Africa is the least advanced continent in terms of energy consumption and production. Paradoxically, it is the sunniest continent, which is why our objective is to exploit this energy potential in order to produce and use sufficient energy. To achieve this, we are carrying out a series of studies aimed at developing a device capable of converting solar photovoltaic energy into electrical energy. This device is a two-stage converter, the first of which is a quadratic boost and the second a full bridge. Initially, this paper is devoted to studying the performance of the quadratic boost.

关键词： Solar Energy Photovoltaic Efficiency Quadratic Boost Converter

Bioinspired sensing-memory-computing integrated vision systems: biomimetic mechanisms, design principles, and applications

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Science China(Information Sciences) 2024年第5期67卷 5-27页

作者： Yujie HUANG Yinlong TAN Yan KANG Yabo CHEN Yuhua TANG Tian JIANG Institute for Quantum Information and State Key laboratory of High Performance Computing College of Computer National University of Defense Technology College of Advanced Interdisciplinary studies National University of Defense Technology Institute for Quantum Science and Technology College of ScienceNational University of Defense Technology

With the explosion of sensory data in the Internet of Things(Io T) era, conventional machine vision systems are becoming increasingly difficult to meet the requirements of high efficiency, low energy consumption, and low latency due to their inherent shortcomings of separate sensing, memory, and computing units. Inspired by the retina and neuromorphic computing, the sensing-memory-computing integrated vision system(SMCVS) that features low power consumption, low latency, and high parallelism has been considered a promising technology to surpass the von Neumann architecture and realize strong artificial ***, novel materials like two-dimensional semiconductors and quantum dots with novel optoelectronic performance provide hardware carriers for implementing integrated sensing-memory-computing architectures,attracting considerable attention. This paper reviews the recent research progress in bioinspired vision systems in terms of biomimetic mechanisms, design principles, computational architectures, and ***, the biomimetic mechanisms are illustrated to guide the design of high-performance artificial visual perception systems. Then the research progress of optoelectronic-synapse-based bioinspired vision systems in the device principles and applications including image filtering, color recognition, visual adaptation, and motion detection are summarized. Finally, the challenges and future developing directions of the SMCVS are provided regarding bionic application, architecture design, and device fabrication.

关键词： sensing-memory-computing architecture neuromorphic computing retinomorphic device image recognition visual system

Recent progress of parameter-adjustable high-power photonic microwave generation based on wide-bandgap photoconductive semiconductors

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

Chinese Optics Letters 2024年第1期22卷 113-122页

作者：荀涛牛昕玥王朗宁张斌姚金妹易木俣杨汉武侯静刘金亮张建徳 College of Advanced Interdisciplinary studies National University of Defense TechnologyChangsha 410073China Nanhu Laser laboratory National University of Defense TechnologyChangsha 410073China

Radio frequency/microwave-directed energy sources using wide bandgap SiC photoconductive semiconductors have attracted much attention due to their unique advantages of high-power output and multi-parameter adjustable *** the past several years,benefitting from the sustainable innovations in laser technology and the significant progress in materials technology,megawatt-class output power electrical pulses with a flexible frequency in the P and L microwave wavebands have been achieved by photoconductive semiconductor ***,we mainly summarize and review the recent progress of the high-power photonic microwave generation based on the SiC photoconductive semiconductor devices in the linear modulation mode,including the mechanism,system architecture,critical technology,and experimental demonstration of the proposed high-power photonic microwave *** outlooks and challenges for the future of multi-channel power synthesis development of higher power photonic microwave using wide bandgap photoconductors are also discussed.

关键词： high-power photonic microwave wide bandgap photoconductive semiconductor devices linear modulation multi-parameter adjustable microwave generation multi-channel power synthesis

A LS-SVM （Least Squares Support Vector Machines） Approach for Predicting Critical Flashover Voltage of Polluted Insulators

在线全文

学校读者我要写书评

暂无评论

Journal of Energy and Power Engineering 2013年第2期7卷 355-360页

作者： Abdelhalim Mahdjoubi Boubakeur Zegnini Mohammed Belkheiri studies and development of semiconductors and dielectrics materials laboratory LeDMaScD Amar Telidji University ofLaghouat Laghouat 03000 Algeria Telecommunications Signals and Systems Laboratory LTSS Amar Telidji University of Laghouat Laghouat 03000 Algeria

LS-SVM （least squares support vector machines） are a class of kemel machines emphasizing on primal-dual aspects in a constrained optimization framework. LS-SVMs aim at extending methodologies typical of classical support vector machines for problems beyond classification and regression. This paper describes a methodology that was developed for the prediction of the critical flashover voltage of polluted insulators by using a LS-SVM. The methodology uses as input variables characteristics of the insulator such as diameter, height, creepage distance, form factor and equivalent salt deposit density. The estimation offlashover performance of polluted insulators is based on field experience and laboratory tests are invaluable as they significantly reduce the time and labour involved in insulators design and selection. The majority of the variables to be predicted are dependent upon several independent variables. The results from this work are useful to predict the contamination severity, critical flashover voltage as a function of contamination severity, arc length, and especially to predict the flashover voltage. The validity of the approach was examined by testing several insulators with different geometries. Moreover, the performance of the proposed approach with other intelligence method based on ANN （artificial neural networks） is compared. It can be concluded that the LS-SVM approach has better generalization ability that assist the measurement and monitoring of contamination severity, flashover voltage and leakage current.

关键词： LS-SVM flashover modeling polluted insulator equivalent salt deposit density.

Electron-transporting boron-doped polycyclic aromatic hydrocarbons:Facile synthesis and heteroatom doping positions-modulated optoelectronic properties

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Chinese Chemical Letters 2024年第4期35卷 447-451页

作者： Tingting Huang Zhuanlong Ding Hao Liu Ping-An Chen Longfeng Zhao Yuanyuan Hu Yifan Yao Kun Yang Zebing Zeng Key laboratory of Chemo/Biosensing and Chemometrics College of Chemistry and Chemical EngineeringHunan UniversityChangsha 410082China Shenzhen Research Institute of Hunan University Shenzhen 518000China Key laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education and Hunan Provincial Key laboratory of Low-Dimensional Structural Physics and Devices School of Physics and Electronics Hunan UniversityChangsha 410082China

While heteroatom doping serves as a powerful strategy for devising novel polycyclic aromatic hydrocarbons(PAHs), the further fine-tuning of optoelectronic properties via the precisely altering of doping patterns remains a challenge. Herein, by changing the doping positions of heteroatoms in a diindenopyrene skeleton, we report two isomeric boron, sulfur-embedded PAHs, named Anti-B_(2)S_(2) and Syn-B_(2)S_(2), as electron transporting semiconductors. Detailed structure-property relationship studies revealed that the varied heteroatom positions not only change their physicochemical properties, but also largely affect their solid-state packing modes and Lewis base-triggered photophysical responses. With their low-lying frontier molecular orbital levels, n-type characteristics with electron mobilities up to 1.5 × 10^(-3)cm^(2)V^(-1)s^(-1)were achieved in solution-processed organic field-effect transistors. Our work revealed the critical role of controlling heteroatom doping patterns for designing advanced PAHs.

关键词： Polycyclic aromatic hydrocarbon Optoelectronic properties Heteroatom doping n-Type organic semiconductors Structure–property relationship

Photodetectors based on junctions of two-dimensional transition metal dichalcogenides

在线全文

学校读者我要写书评

暂无评论

Chinese Physics B 2017年第3期26卷 174-188页

作者：魏侠闫法光申超吕全山王开友 State Key laboratory of Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences College of materials Science and Opto-Electronic Technology University of Chinese Academy of Science

Transition metal dichalcogenides （TMDCs） have gained considerable attention because of their novel properties and great potential applications. The flakes of TMDCs not only have great light absorption from visible to near infrared, but also can be stacked together regardless of lattice mismatch like other two-dimensional （2D） materials. Along with the studies on intrinsic properties of TMDCs, the junctions based on TMDCs become more and more important in applications of photodetection. The junctions have shown many exciting possibilities to fully combine the advantages of TMDCs, other 2D materials, conventional and organic semiconductors together. Early studies have greatly enriched the application of TMDCs in photodetection. In this review, we investigate the efforts in photodetectors based on the junctions of TMDCs and analyze the properties of those photodetectors. Homojunctions based on TMDCs can be made by surface chemical doping, elemental doping and electrostatic gating. Heterojunction formed between TMDCs/2D materials, TMDCs/conventional semiconductors and TMDCs/organic semiconductor also deserve more attentions. We also compare the advantages and disadvantages of different junctions, and then give the prospects for the development of junctions based on TMDCs.

关键词： transition metal dichalcogenides homojunction heterojunction photodetector

Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode

在线全文

学校读者我要写书评

暂无评论

Light(Science & Applications) 2022年第5期11卷 808-819页

作者： Hongliang Chang Zhetong Liu Shenyuan Yang Yaqi Gao Jingyuan Shan Bingyao Liu Jingyu Sun Zhaolong Chen Jianchang Yan Zhiqiang Liu Junxi Wang Peng Gao Jinmin Li Zhongfan Liu Tongbo Wei Research and development Center for Semiconductor Lighting Technology Institute of SemiconductorsChinese Academy of Sciences100083 BeijingChina Center of materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences100049 BeijingChina Center for Nanochemistry(CNC) Beijing Science and Engineering Center for NanocarbonsBeijing National Laboratory for Molecular SciencesCollege of Chemistry and Molecular EngineeringPeking University100871 BeijingChina Electron Microscopy laboratory and International Center for Quantum MaterialsSchool of PhysicsPeking University100871 BeijingChina Beijing graphene institute(BGI) 100095 BeijingChina Academy for Advanced Interdisciplinary studies Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced MaterialsPeking University100871 BeijingChina State Key laboratory of Superlattices and Microstructures Institute of SemiconductorsChinese Academy of Sciences100083 BeijingChina

The energy-efficient deep ultraviolet(DUV)optoelectronic devices suffer from critical issues associated with the poor quality and large strain of nitride material system caused by the inherent mismatch of *** this work,we have prepared the strain-free AlN film with low dislocation density(DD)by graphene(Gr)-driving strain-pre-store engineering and a unique mechanism of strain-relaxation in quasi-van der Waals(QvdW)epitaxy is *** DD in AlN epilayer with Gr exhibits an anomalous sawtooth-like evolution during the whole epitaxy *** can help to enable the annihilation of the dislocations originated from the interface between AlN and Gr/sapphire by impelling a lateral two-dimensional growth ***,it can induce AlN epilayer to pre-store sufficient tensile strain during the early growth stage and thus compensate the compressive strain caused by ***,the low-strain state of the DUV light-emitting diode(DUV-LED)epitaxial structure is realized on the strain-free AlN template with ***,the DUV-LED with Gr demonstrate 2.1 times enhancement of light output power and a better stability of luminous wavelength compared to that on bare *** in-depth understanding of this work reveals diverse beneficial impacts of Gr on nitride growth and provides a novel strategy of relaxing the vital requirements of hetero-mismatch in conventional heteroepitaxy.

关键词： sapphire diode strain