Photodetectors based on junctions of two-dimensional transition metal dichalcogenides

作     者：魏侠 闫法光 申超 吕全山 王开友 

作者机构：State Key Laboratory of Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences College of Materials Science and Opto-Electronic Technology University of Chinese Academy of Science 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2017年第26卷第3期

页      面：174-188页

核心收录：

学科分类：081702[工学-化学工艺] 08[工学] 0817[工学-化学工程与技术] 

基　　金：Project supported by the National Basic Research Program of China(Grant No.2014CB643903) the National Natural Science Foundation of China(Grant Nos.61225021,11474272,11174272,and 11404324) K.C.Wong Education Foundation 

主　　题：transition metal dichalcogenides homojunction heterojunction photodetector 

摘      要：Transition metal dichalcogenides （TMDCs） have gained considerable attention because of their novel properties and great potential applications. The flakes of TMDCs not only have great light absorption from visible to near infrared, but also can be stacked together regardless of lattice mismatch like other two-dimensional （2D） materials. Along with the studies on intrinsic properties of TMDCs, the junctions based on TMDCs become more and more important in applications of photodetection. The junctions have shown many exciting possibilities to fully combine the advantages of TMDCs, other 2D materials, conventional and organic semiconductors together. Early studies have greatly enriched the application of TMDCs in photodetection. In this review, we investigate the efforts in photodetectors based on the junctions of TMDCs and analyze the properties of those photodetectors. Homojunctions based on TMDCs can be made by surface chemical doping, elemental doping and electrostatic gating. Heterojunction formed between TMDCs/2D materials, TMDCs/conventional semiconductors and TMDCs/organic semiconductor also deserve more attentions. We also compare the advantages and disadvantages of different junctions, and then give the prospects for the development of junctions based on TMDCs.