Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode

作     者：Hongliang Chang Zhetong Liu Shenyuan Yang Yaqi Gao Jingyuan Shan Bingyao Liu Jingyu Sun Zhaolong Chen Jianchang Yan Zhiqiang Liu Junxi Wang Peng Gao Jinmin Li Zhongfan Liu Tongbo Wei Hongliang Chang;Zhetong Liu;Shenyuan Yang;Yaqi Gao;Jingyuan Shan;Bingyao Liu;Jingyu Sun;Zhaolong Chen;Jianchang Yan;Zhiqiang Liu;Junxi Wang;Peng Gao;Jinmin Li;Zhongfan Liu;Tongbo Wei

作者机构：Research and Development Center for Semiconductor Lighting TechnologyInstitute of SemiconductorsChinese Academy of Sciences100083 BeijingChina Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of Sciences100049 BeijingChina Center for Nanochemistry(CNC)Beijing Science and Engineering Center for NanocarbonsBeijing National Laboratory for Molecular SciencesCollege of Chemistry and Molecular EngineeringPeking University100871 BeijingChina Electron Microscopy Laboratoryand International Center for Quantum MaterialsSchool of PhysicsPeking University100871 BeijingChina Beijing graphene institute(BGI)100095 BeijingChina Academy for Advanced Interdisciplinary StudiesInterdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced MaterialsPeking University100871 BeijingChina State Key Laboratory of Superlattices and MicrostructuresInstitute of SemiconductorsChinese Academy of Sciences100083 BeijingChina 

出 版 物：《Light(Science & Applications)》 (光（科学与应用)（英文版）)

年 卷 期：2022年第11卷第5期

页      面：808-819页

核心收录：

学科分类：08[工学] 0803[工学-光学工程] 

基　　金：financially supported by the National Key R&D Program of China(No.2019YFA0708203) the National Natural Science Foundation of China(Nos.61974139,52192614 and 12074369) Beijing Natural Science Foundation(No.4222077) 

主　　题：sapphire diode strain 

摘      要：The energy-efficient deep ultraviolet(DUV)optoelectronic devices suffer from critical issues associated with the poor quality and large strain of nitride material system caused by the inherent mismatch of *** this work,we have prepared the strain-free AlN film with low dislocation density(DD)by graphene(Gr)-driving strain-pre-store engineering and a unique mechanism of strain-relaxation in quasi-van der Waals(QvdW)epitaxy is *** DD in AlN epilayer with Gr exhibits an anomalous sawtooth-like evolution during the whole epitaxy *** can help to enable the annihilation of the dislocations originated from the interface between AlN and Gr/sapphire by impelling a lateral two-dimensional growth ***,it can induce AlN epilayer to pre-store sufficient tensile strain during the early growth stage and thus compensate the compressive strain caused by ***,the low-strain state of the DUV light-emitting diode(DUV-LED)epitaxial structure is realized on the strain-free AlN template with ***,the DUV-LED with Gr demonstrate 2.1 times enhancement of light output power and a better stability of luminous wavelength compared to that on bare *** in-depth understanding of this work reveals diverse beneficial impacts of Gr on nitride growth and provides a novel strategy of relaxing the vital requirements of hetero-mismatch in conventional heteroepitaxy.