Characteristics of InGaN multiple quantum well blue-violet laser diodes

作     者：LI Deyao1, ZHANG Shuming1, WANG Jianfeng1, CHEN Jun1, CHEN Lianghui2, CHONG Ming2, ZHU Jianjun1, ZHAO Degang1, LIU Zongshun1, YANG Hui1 & LIANG Junwu1 1. State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China 2. Nano-Optoelectronics Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China 

作者机构：State Key Laboratory of Integrated Optoelectronics Institute of Semiconductors Chinese Academy of Sciences Beijing China Nano-Optoelectronics Laboratory Institute of Semiconductors Chinese Academy of Sciences Beijing China 

出 版 物：《Science China(Technological Sciences)》 (中国科学（技术科学英文版）)

年 卷 期：2006年第49卷第6期

页      面：727-732页

核心收录：

学科分类：08[工学] 0803[工学-光学工程] 

基　　金：National High Technology Research and Development Program of China, (2001AA313100) National Key Laboratory of High Power Semiconductor Lasers in Changchun University of Science and Technology, (51456020205ZK0301) 

主　　题：metalorganic chemical vapor deposition (MOCVD), GaN-based laser diodes, multiple quantum well, ridge waveguide, threshold current. 

摘      要：Studies on InGaN multiple quantum well blue-violet laser diodes have been reported. Laser structures with long-period multiple quantum wells were grown by metal-organic chemical vapor deposition. Triple-axis X-ray diffraction (TAXRD) measurements show that the multiple quantum wells were high quality. Ridge waveguide laser diodes were fabricated with cleaved facet mirrors. The laser diodes lase at room temperature under a pulsed current. A threshold current density of 3.3 kA/cm[2]; a characteristic temperature T 0 of 145 K were observed for the laser diode.