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Soft multifunctional neurological electronic skin through intrinsically stretchable synaptic transistor

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Nano Research 2024年第7期17卷 6550-6559页

作者： Pengcheng Zhu Shuairong Mu Wenhao Huang Zeye Sun Yuyang Lin Ke Chen Zhifeng Pan Mohsen Golbon Haghighi Roya Sedghi Junlei Wang Yanchao Mao Key Laboratory of Materials Physics of ministry of education School of Physics and MicroelectronicsZhengzhou UniversityZhengzhou 450001China School of Mechanical and power Engineering Zhengzhou UniversityZhengzhou 450001China Department of Chemistry Shahid Beheshti UniversityTehran ***Iran

Neurological electronic skin(E-skin)can process and transmit information in a distributed manner that achieves effective stimuli perception,holding great promise in neuroprosthetics and soft *** E-skin with multifunctional perception abilities can enable robots to precisely interact with the complex surrounding ***,current neurological E-skins that possess tactile,thermal,and visual perception abilities are usually prepared with rigid materials,bringing difficulties in realizing biologically synapse-like ***,we report a soft multifunctional neurological E-skin(SMNE)comprised of a poly(3-hexylthiophene)(P3HT)nanofiber polymer semiconductor-based stretchable synaptic transistor and multiple soft artificial sensory receptors,which is capable of effectively perceiving force,thermal,and light *** stretchable synaptic transistor can convert electrical signals into transient channel currents analogous to the biological excitatory postsynaptic *** it also possesses both short-term and long-term synaptic plasticity that mimics the human memory *** integrating a stretchable triboelectric nanogenerator,a soft thermoelectric device,and an elastic photodetector as artificial receptors,we further developed an SMNE that enables the robot to make precise actions in response to various surrounding *** with traditional neurological E-skin,our SMNE can maintain the softness and adaptability of biological synapses while perceiving multiple stimuli including force,temperature,and *** SMNE could promote the advancement of E-skins for intelligent robot applications.

关键词： electronic skin soft stretchable polymer semiconductor synaptic transistor multifunctional

Optoelectronic tuning of plasmon resonances via optically modulated hot electrons

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National Science Review 2024年第5期11卷 134-141页

作者： Jiacheng Yao Cheng Wang Chi Zhang Song Ma Li Zhou Ti Wang Ququan Wang Hongxing Xu Tao Ding Key Laboratory of Artificial Micro Nano Structure of Ministry of Education School of Physics and Technology Wuhan University Department of Physics Southern University of Science and Technology

Fast optical modulation of nanoplasmonics is fundamental for on-chip integration of all-optical *** various strategies have been proposed for dynamic modulation of surface plasmons, critical issues of device compatibility and extremely low efficiency in the visible spectrum hamper the application of optoplasmonic nanochips. Here we establish an optoplasmonic system based on Au@Cu2–xS hybrid core–shell nanoparticles. The optical excitation of hot electrons and their charge transfer to the semiconductor coating(Cu2–xS) lead to lowered electron density of Au, which results in the red shift of the localized surface plasmon resonance. The hot electrons can also transport through the Cu2–xS layer to the metal substrate, which increases the conductance of the nanogap. As such, the coupled gap plasmon blue-shifts with a magnitude of up to ～15 nm, depending on the excitation power and the thickness of the coatings, which agrees with numerical simulations. All of this optoelectronic tuning process is highly reversible, controllable and fast with a modulated laser beam, which is highly compatible and sufficiently useful for on-chip integration of nanophotonic devices.

关键词： hot carriers plasmon switching optoplasmonics circuit modelNPoM

Effect and mechanism of on-chip electrostatic discharge protection circuit under fast rising time electromagnetic pulse

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强激光与粒子束 2024年第10期36卷 44-52页

作者： Mao Xinyi Chai Changchun Li Fuxing Lin Haodong Zhao Tianlong Yang Yintang Key Laboratory of ministry of education for Wide Band-Gap semiconductor Materials and devices Xidian UniversityXi’an 710071China

The electrostatic discharge(ESD)protection circuit widely exists in the input and output ports of CMOS digital circuits,and fast rising time electromagnetic pulse(FREMP)coupled into the device not only interacts with the CMOS circuit,but also acts on the protection *** paper establishes a model of on-chip CMOS electrostatic discharge protection circuit and selects square pulse as the FREMP *** on multiple physical parameter models,it depicts the distribution of the lattice temperature,current density,and electric field intensity inside the *** the same time,this paper explores the changes of the internal devices in the circuit under the injection of fast rising time electromagnetic pulse and describes the relationship between the damage amplitude threshold and the pulse *** results show that the ESD protection circuit has potential damage risk,and the injection of FREMP leads to irreversible heat loss inside the *** addition,pulse signals with different attributes will change the damage threshold of the *** results provide an important reference for further evaluation of the influence of electromagnetic environment on the chip,which is helpful to carry out the reliability enhancement research of ESD protection circuit.

关键词： fast rising time electromagnetic pulse damage effect electrostatic discharge protection circuit damage location prediction

Ga(X)N/Si nanoarchitecture:An emerging semiconductor platform for sunlight-powered water splitting toward hydrogen

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Frontiers in Energy 2024年第1期18卷 56-79页

作者： Yixin LI Sharif Md.SADAF Baowen ZHOU Key Laboratory for power Machinery and Engineering of the ministry of education Research Center for Renewable Synthetic FuelSchool of Mechanical EngineeringShanghai Jiao Tong UniversityShanghai 200240China Centre Energie Matériaux et TélécommunicationsInstitut National de la Recherche Scientifique(INRS)-Universitédu Québec1650 Boulevard Lionel-BouletVarennesQuébec J3X1S2Canada

Sunlight-powered water splitting presents a promising strategy for converting intermittent and virtually unlimited solar energy into energy-dense and storable green *** the pioneering discovery by Honda and Fujishima,considerable efforts have been made in this research *** various materials developed,Ga(X)N/Si(X=In,Ge,Mg,etc.)nanoarchitecture has emerged as a disruptive semiconductor platform to split water toward hydrogen by *** paper introduces the characteristics,properties,and growth/synthesis/fabrication methods of Ga(X)N/Si nanoarchitecture,primarily focusing on explaining the suitability as an ideal platform for sunlight-powered water splitting toward green hydrogen *** addition,it exclusively summarizes the recent progress and development of Ga(X)N/Si nanoarchitecture for photocatalytic and photoelectrochemical water ***,it describes the challenges and prospects of artificial photosynthesis integrated device and system using Ga(X)N/Si nanoarchitectures for solar water splitting toward hydrogen.

关键词： Ga(X)N/Si nanoarchitecture artificial photosynthesis water splitting solar toward hydrogen

Microstructure,optical,and photoluminescence properties ofβ-Ga_(2)O_(3)films prepared by pulsed laser deposition under different oxygen partial pressures

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Chinese Physics B 2021年第2期30卷 578-583页

作者： Rui-Rui Cui Jun Zhang Zi-Jiang Luo Xiang Guo Zhao Ding Chao-Yong Deng power semiconductor device reliability center of the ministry of education Department of Electronic ScienceCollege of Big Data and Information EngineeringGuizhou UniversityGuiyang 550025China College of Computer and Information Engineering Guizhou University of CommerceGuiyang 550014China

Theβ-Ga_(2)O_(3)films are prepared on polished Al_(2)O_(3)(0001)substrates by pulsed laser deposition at different oxygen partial *** influence of oxygen partial pressure on crystal structure,surface morphology,thickness,optical properties,and photoluminescence properties are studied by x-ray diffraction(XRD),atomic force microscope(AFM),scanning electron microscope(SEM),spectrophotometer,and *** results of x-ray diffraction and atomic force microscope indicate that with the decrease of oxygen pressure,the full width at half maximum(FWHM)and grain size *** the increase of oxygen pressure,the thickness of the films first increases and then *** room-temperature UV-visible(UV-Vis)absorption spectra show that the bandgap of theβ-Ga_(2)O_(3)film increases from4.76 e V to 4.91 e V as oxygen pressure *** temperature photoluminescence spectra reveal that the emission band can be divided into four Gaussian bands centered at about 310 nm(~4.0 e V),360 nm(~3.44 e V),445 nm(~2.79 e V),and 467 nm(~2.66 e V),*** addition,the total photoluminescence intensity decreases with oxygen pressure increasing,and it is found that the two UV bands are related to self-trapped holes(STHs)at O1 sites and between two O2-s sites,respectively,and the two blue bands originate from V_(Ga)^(2-)at Ga1 tetrahedral *** photoluminescence mechanism of the films is also *** results will lay a foundation for investigating the Ga_(2)O_(3)film-based electronic devices.

关键词： β-Ga_(2)O_(3) pulsed laser deposition band gap photoluminescence

Propagation of terahertz waves in nonuniform plasma slab under “electromagnetic window”

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Chinese Physics B 2022年第3期31卷 399-405页

作者： Hao Li Zheng-Ping Zhang Xin Yang College of Big Data and Information Engineering Guizhou UniversityGuiyang 550025China semiconductor power device reliability Engineering Research center of ministry of education Guizhou UniversityGuiyang 550025China Key Laboratory of Micro-Nano-Electronics and Software Technology of Guizhou Province Guiyang 550025China

The application of magnetic fields, electric fields, and the increase of the electromagnetic wave frequency are upand-coming solutions for the blackout problem. Therefore, this study considers the influence of the external magnetic field on the electron flow and the effect of the external electric field on the electron density distribution, and uses the scattering matrix method(SMM) to perform theoretical calculations and analyze the transmission behavior of terahertz waves under different electron densities, magnetic field distributions, and collision frequencies. The results show that the external magnetic field can improve the transmission of terahertz waves at the low-frequency end. Magnetizing the plasma from the direction perpendicular to the incident path can optimize the right-hand polarized wave transmission. The external electric field can increase the transmittance to some extent, and the increase of the collision frequency can suppress the right-hand polarized wave cyclotron resonance caused by the external magnetic field. By adjusting these parameters, it is expected to alleviate the blackout phenomenon to a certain extent.

关键词： terahertz wave scattering matrix method(SMM) nonuniform magnetized plasma electric field

Side-chain symmetry-breaking strategy on porphyrin donors enables high-efficiency binary all-small-molecule organic solar cells

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SusMat 2024年第3期4卷 204-213页

作者： Wentao Zou Xu Zhang Haojiang Shen Wenqing Zhang Xinyue Jiang Liaohui Ni Can Shen Longlong Geng Xiaotao Hao Yingguo Yang Xunchang Wang Renqiang Yang Yanna Sun Yuanyuan Kan Ke Gao Shandong Provincial Key Laboratory for Science of Material Creation and Energy Conversion Science Center for Material Creation and Energy ConversionInstitute of Frontier ChemistrySchool of Chemistry and Chemical EngineeringShandong UniversityQingdaoChina School of Physics State Key Laboratory of Crystal MaterialsShandong UniversityJinanChina Shandong Provincial Key Laboratory of Monocrystalline Silicon semiconductor Materials and Technology College of Chemistry and Chemical EngineeringDezhou UniversityDezhouChina School of Microelectronics Fudan UniversityShanghaiChina Key Laboratory of Optoelectronic Chemical Materials and devices(ministry of education) School of Optoelectronic Materials&TechnologyJianghan UniversityWuhanChina

Side-chain symmetry-breaking strategy plays an important role in developing photovoltaic materials for high-efficiency all-small-molecule organic solar cells(ASM OSCs).However,the power conversion efficiencies(PCEs)of ASM OSCs still lag behind their polymer-based counterparts,which can be attributed to the difficulties in achieving favorable ***,two asymmetric porphyrin-based donors named DAPor-DPP and DDPor-DPP were synthesized,presenting stronger intermolecular interaction and closer molecular stacking compared to the symmetric *** DAPor-DPP:6TIC blend afforded a favorablemorphologywith nanoscale phase separation and more ordered molecular packing,thus achievingmore efficient charge transportation and suppressed charge ***,the DAPor-DPP:6TIC-based device exhibited superior photovoltaic parameters,yielding a champion PCE of 16.62%higher than that of the DDPor-DPP-based device(14.96%).To our knowledge,16.62%can be ranked as one of the highest PCE values among the binary ASM OSC *** provides a prospective approach to address the challenge ofASM OSCs in improving film morphology and further achieving high efficiency via side-chain symmetry-breaking strategy,exhibiting great potential in constructing efficient ASM OSCs.

关键词： all-small-molecule organic solar cells asymmetric side-chain engineering power conversion efficiency small molecule donors

An I/Q DAC with gain matching circuit for a wireless transmitter

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Journal of semiconductors 2013年第6期34卷 126-131页

作者：汤华莲庄奕琪景鑫张丽 ministry of education Key Laboratory of Wide Band-Gap semiconductor Materials and device Xidian University

This paper presents a two-channel 12-bit current-steering digital-to-analog converter（DAC） for I and Q signal paths in a wireless *** proposed DAC has a full-scale output current with an adjusting range of 2 to 10 mA.A gain matching circuit is proposed to reduce gain mismatch between the I and Q *** tuning range is±24%of full scale and the minimum resolution is 1/16 *** further improve its dynamic performance, the switch driver and current cell are optimized to minimize glitch *** chip has been processed in a standard 0.13μm CMOS *** mismatch between a 1-channel DAC and a Q-channel DAC is measured to be approximately 0.13%.At 120-MSPS sample rate for 1 MHz sinusoidal signal,the spurious free dynamic range （SFDR） is 75 *** total power dissipation is 62 mW and has an active area of 1.08 mm^2.

关键词： digital-to-analog converter gain mismatch switch current cell

reliability analysis of GaN-based light emitting diodes for solid state illumination

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Chinese Physics B 2008年第7期17卷 2696-2700页

作者：杨凌马晓华冯倩郝跃 Key Laboratory of ministry of education for Wide Band Gap semiconductor Material and device Institute of MicroelectronicsXidian University

In this paper, we have discussed the effect of electrical stress on GaN light emitting diode （LED）. With the lapse of time, the LED with an applied large current stress can reduce its current more than without such a stress under a large forward-voltage drop. Its scanning electron microscopy （SEM） image shows that there exist several pits on the surface of the p-metal. With an electrical stress applied, the number of pits greatly increases. We also find that the degradation of GaN LED is related to the oxidized Ni/Au ohmic contact to p-GaN. The electrical activation of H-passivated Mg acceptors is described in detail. Annealing is performed in ambient air for 10 min and the differential resistances at a forward-voltage drop of 5 V are taken to evaluate the activation of the Mg acceptors. These results suggest some mechanisms of degradation responsible for these phenomena, which are described in the paper.

关键词： GaN based LED electrical stress pits annealing mechanism of degradation