Microstructure,optical,and photoluminescence properties ofβ-Ga_(2)O_(3)films prepared by pulsed laser deposition under different oxygen partial pressures

作     者：Rui-Rui Cui Jun Zhang Zi-Jiang Luo Xiang Guo Zhao Ding Chao-Yong Deng 崔瑞瑞;张俊;罗子江;郭祥;丁召;邓朝勇

作者机构：Power Semiconductor Device Reliability Center of the Ministry of EducationDepartment of Electronic ScienceCollege of Big Data and Information EngineeringGuizhou UniversityGuiyang 550025China College of Computer and Information EngineeringGuizhou University of CommerceGuiyang 550014China 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2021年第30卷第2期

页      面：578-583页

核心收录：

学科分类：080901[工学-物理电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080401[工学-精密仪器及机械] 0804[工学-仪器科学与技术] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0803[工学-光学工程] 

基　　金：Project supported by the Guizhou Provincial Science and Technology Planning Project,China(Grant No.2018-5781) the National Natural Science Foundation of China(Grant No.51762010) the Guizhou Provincial Science and Technology Foundation,China(Grant Nos.2020-1Y021 and 2020-1Y271) the Guizhou Provincial High-level Innovative Talents,China(Grant No.2018-4006) 

主　　题：β-Ga_(2)O_(3) pulsed laser deposition band gap photoluminescence 

摘      要：Theβ-Ga_(2)O_(3)films are prepared on polished Al_(2)O_(3)(0001)substrates by pulsed laser deposition at different oxygen partial *** influence of oxygen partial pressure on crystal structure,surface morphology,thickness,optical properties,and photoluminescence properties are studied by x-ray diffraction(XRD),atomic force microscope(AFM),scanning electron microscope(SEM),spectrophotometer,and *** results of x-ray diffraction and atomic force microscope indicate that with the decrease of oxygen pressure,the full width at half maximum(FWHM)and grain size *** the increase of oxygen pressure,the thickness of the films first increases and then *** room-temperature UV-visible(UV-Vis)absorption spectra show that the bandgap of theβ-Ga_(2)O_(3)film increases from4.76 e V to 4.91 e V as oxygen pressure *** temperature photoluminescence spectra reveal that the emission band can be divided into four Gaussian bands centered at about 310 nm(~4.0 e V),360 nm(~3.44 e V),445 nm(~2.79 e V),and 467 nm(~2.66 e V),*** addition,the total photoluminescence intensity decreases with oxygen pressure increasing,and it is found that the two UV bands are related to self-trapped holes(STHs)at O1 sites and between two O2-s sites,respectively,and the two blue bands originate from V_(Ga)^(2-)at Ga1 tetrahedral *** photoluminescence mechanism of the films is also *** results will lay a foundation for investigating the Ga_(2)O_(3)film-based electronic devices.