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Adjustable ion energy barrier for reliable memristive neuromorphic systems

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Science China Materials 2024年第11期67卷 3759-3760页

作者： Tianci Huang Zuqing Yuan School of integrated circuits and Electronics Beijing Institute of Technology

With the rapid development of artificial intelligence and the processing of large-scale data, the demand for low-power and high-speed computing has become increasingly crucial [1].Neuromorphic computing, which mimics the neural structure of the human brain, offers a promising solution to overcome the limitations of traditional von Neumann architecture [2,3].

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Hybrid-integrated 200 Gb/s REC-DML array transmitter based on photonic wire bonding technology

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Chinese Optics Letters 2024年第8期22卷 64-69页

作者： Yuxin Ma Jie Zhao Tongtong Yang Yipeng Mei Zhenxing Sun Jun Lu Shaobo Li Xiang Ma Xiangfei Chen Key Laboratory of Intelligent Optical Sensing and Manipulation of the Ministry of Education&National Laboratory of Solid State Microstructures&College of Engineering and Applied Sciences&institute of Optical Communication Engineering&Nanjing University-Tongding Joint Lab for large-scale Photonic integrated circuits Nanjing UniversityNanjing 210023China Optical Communication Research and Development Center 54th Research Institute of China Electronics Technology Group CorporationShijiazhuang 050081China

An 8-channel hybrid-integrated chip for 200 Gb/s(8×25 Gb/s)signal transmission has been *** channels are all within the O-band,and with a spacing of 800 *** core of this chip is a monolithic integrated multi-wavelength laser array of 8 directly-modulated distributed feedback(DFB)*** using the reconstruction equivalent chirp technique,multi-wavelength integration and asymmetric phase shift structures are achieved in the laser *** output laser beams of the array are combined by a planar light-wave circuit,which is hybrid-integrated with the laser array by photonic wire *** results of this transmitter chip show good single-mode working of each unit laser,with a sidemode suppression ratio above 50 dB,and the modulation bandwidth is above 20 *** eye diagrams are obtained in the lasers for 25 Gb/s non-return-to-zero modulation,which implies a total 200 Gb/s transmission rate for the whole chip.

关键词： direct modulation laser array reconstruction equivalent chirp photonic wire bonding hybrid integration

Enhanced potassium storage of carbon nanofibers as binderfree anodes enabled by coupling ultra-small amorphous Sb_(2)O_(3),graphene modification and sulfur doping

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Rare Metals 2024年第1期43卷 51-64页

作者： Zhao Huang Yu-Kang Lou Lin Peng Yuan Peng Meng-Meng Wang Ming Zhang College of Railway Transportation Hunan University of TechnologyZhuzhou 412007China College of Semiconductors(College of integrated circuits) Changsha Semiconductor Technology and Application Innovation Research InstituteHunan UniversityChangsha 410082China Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education College of Semiconductors(College of Integrated Circuits)Hunan UniversityChangsha 410082China

Considering the intrinsic advantages of natural copiousness and cost-effectiveness of potassium resource,potassium-ion batteries(KIBs) are booming as prospective alternatives to lithium-ion batteries(LIBs) in large-scale energy storage scenarios. Nevertheless, lacking desirable electrodes for reversibly hosting the bulky K+hinders the widespread application of KIBs, and it needs to be urgently solved. Hereon, the porous S-doped Sb_(2)O_(3)-graphene-carbon(SAGC) nanofibers are manufactured through an adjustable and facile approach, which involves electrospinning, in situ etching and sulfuration. The synthesized SAGC is featured by the ultra-small amorphous Sb_(2)O_(3) homogeneously wrapped inside the carbon matrix, as well as the co-incorporation of graphene and sulfur. Tentatively,the SAGC nanofiber sheets are applied as binder-free anodes for KIBs, exhibiting a prominent cycling life(256.72 m Ah·g^(-1) over 150 cycles at 100 m A·g^(-1)) and rate·g^(-1) over 100 cycles at 1 A·g^(-1)). The positive synergy among all the active components accounts for the distinguished performances of the SAGC. By reinforcing the tolerability to the swelling stress, producing the valid electrochemical active sites, and promoting the charge transferring for reversible K+uptake, the SAGC finally renders the excellent cyclability, capacity, and rate capability. Moreover, the extrinsic electrochemical pseudocapacitance characteristics induced by the porous carbon substrate elevate the K-storage capacity of the SAGC as well. It is hoped that the conclusions drawn may offer new insights into a direction for the high-performance binderfree KIB anodes.

关键词： S-doped Sb_(2)O_(3)-graphene-carbon Nanofibers Binder-free Anodes Potassium-ion batteries

Atomic tracking of thermally-driven structural evolution in 2D crystals:Case of NbSe_(2)

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InfoMat 2024年第2期6卷 90-98页

作者： Baofei Hou Teng Zhang Tingting Wang Hongyan Ji Huixia Yang Liangguang Jia Xu Han Jingsi Qiao Yu Zhang Liwei Liu Hong-Jun Gao Yeliang Wang School of integrated circuits and Electronics&Yangtze Delta Region Academy Beijing Institute of TechnologyBeijingthe People's Republic of China institute of Physics Chinese Academy of SciencesBeijingthe People's Republic of China

Advanced atomic tracking techniques play a critical role in characterizing structural evolution,elucidating fundamental mechanisms of exotic phenomena and tailoring delicate *** driven structural modulation in 2D crystals,such as the charge density wave(CDW),often leads to intriguing quantum properties,making them a valuable platform for exploring fundamental physics and potential device ***,despite their significance,experimental studies addressing atomic tracking of thermally-driven structural evolution in 2D crystals have been ***,we utilize high-accuracy variable-temperature atomic tracking measurements with scanning tunneling microscopy(STM)to directly observe a series of structural transitions in a model 2D crystal,namely NbSe_(2).With the atomic tracking technique,we confirm the existence of the universal thermally-driven CDW transition hysteresis between the heating and cooling *** transition hysteresis,characterized by a constant temperature offset,represents a new phenomenon of structural *** findings provide a feasible method to track CDW transitions at the atomic scale in 2D crystals,significantly contributing to a better understanding and the potential modulation of these materials'functions in nanodevices.

关键词： 2D crystal atomic tracking technique structural evolution temperature hysteresis

Implementation of sub-100 nm vertical channel-all-around(CAA) thin-film transistor using thermal atomic layer deposited IGZO channel

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Journal of Semiconductors 2024年第7期45卷 40-44页

作者： Yuting Chen Xinlv Duan Xueli Ma Peng Yuan Zhengying Jiao Yongqing Shen Liguo Chai Qingjie Luan Jinjuan Xiang Di Geng Guilei Wang Chao Zhao Beijing Superstring Academy of Memory Technology Beijing 100176China State Key Laboratory of Fabrication Technologies for integrated circuits Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China

In-Ga-Zn-O(IGZO) channel based thin-film transistors(TFT), which exhibit high on-off current ratio and relatively high mobility, has been widely researched due to its back end of line(BEOL)-compatible potential for the next generation dynamic random access memory(DRAM) application. In this work, thermal atomic layer deposition(TALD) indium gallium zinc oxide(IGZO) technology was explored. It was found that the atomic composition and the physical properties of the IGZO films can be modulated by changing the sub-cycles number during atomic layer deposition(ALD) process. In addition, thin-film transistors(TFTs) with vertical channel-all-around(CAA) structure were realized to explore the influence of different IGZO films as channel layers on the performance of transistors. Our research demonstrates that TALD is crucial for high density integration technology, and the proposed vertical IGZO CAA-TFT provides a feasible path to break through the technical problems for the continuous scale of electronic equipment.

关键词： In-Ga-Zn-O(IGZO) thermal atomic layer deposition vertical channel thin-film transistor

A multimode digital controller IC for flyback converter with high accuracy primary-side feedback

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Journal of Zhejiang University-Science C(Computers and Electronics) 2013年第8期14卷 652-662页

作者： Jian-ping QIU Le-nian HE Yu-lin WANG institute of very large scale integrated circuits Design Zhejiang University

A digital controller IC for the flyback converter with primary-side feedback is proposed. The controller is used for adapter charger or LED driver applications. To obtain high accuracy for the primary-side feedback, a digital primary-side sensing technology is adopted, which can auto-track the knee point of the primary auxiliary winding voltage. Furthermore, an internal digital compensator eliminates the need for external loop compensation components while achieving excellent line and load regulation. The controller could output both constant voltage and constant current depending on the load current. Pulse width modulation and pulse frequency modulation are used in constant voltage mode while quasi-resonant control is used in constant current mode. The digital controller is validated by using FPGA.

关键词： Multimode Digital control Primary-side sensing Quasi-resonant control Constant voltage (CV) Constant current (CC) LED driver

Stability-enhanced RF signal transmission over long fiber-optic links

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Chinese Optics Letters 2024年第5期22卷 131-136页

作者：尹知谦郑满航张川博管世健周昕刘奕彤刚泽宇聂佳强张云山朱兴邦方涛陈向飞 Engineering Research Center of Precision Photonics Integration and System Application Ministry of Education&Key Laboratory of Intelligent Optical Sensing and ManipulationMinistry of Education&National Laboratory of Solid State Microstructures&College of Engineering and Applied Sciences&Institute of Optical Communication Engineering&Nanjing University-Tongding Joint Lab for Large-scale Photonic Integrated CircuitsNanjing UniversityNanjing 210023China College of Electronics and Optical Engineering and College of Flexible Electronics(Future Technology) Nanjing University of Posts and TelecommunicationsNanjing 210023China The 41st Research institute of China Electronics Technology Group Corp Qingdao 266000China

We propose a method for optimizing the phase stability of microwave signal transmission over long ***,the design of the photon link was modified to reduce the radio frequency(RF)signal’s baseline noise and increase ***,a low-noise driver circuit was developed for a two-section distributed feedback(DFB)laser designed using reconstruction equivalent chirp(REC)technology to create an ultra-stable laser,and its performance was characterized through linewidth *** results indicate that the DFB laser achieved narrower linewidth,improving system phase *** an injection current(30 mA)is applied to the reflection section of the two-section DFB laser,the laser linewidth will be narrower(1.38 MHz),further enhancing the system’s phase transmission *** a 1 Hz offset frequency,a residual phase noise of-88.65 dBc/Hz is *** short-term stability with an averaging time of 1 s is 1.60×10^(-14),and the long-term stability over a testing time of 60,000 s is 3.41×10^(-18).Even after incorporating temperature variations,the long-term stability reaches 8.37×10^(-18) at 22 h.

关键词： frequency dissemination two-section distributed feedback laser phase stability

A low drift curvature-compensated bandgap reference with trimming resistive circuit

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Journal of Zhejiang University-Science C(Computers and Electronics) 2011年第8期12卷 698-706页

作者： Zhi-hua NING Le-nian HE institute of very large scale integrated circuits Zhejiang University Hangzhou 310027 China

A low temperature drift curvature-compensated complementary metal oxide semiconductor (CMOS) bandgap ref-erence is proposed.A dual-differential-pair amplifier was employed to add compensation with a high-order term of TlnT (T is the thermodynamic temperature) to the traditional 1st-order compensated *** reduce the offset of the amplifier and noise of the bandgap reference,input differential metal oxide semiconductor field-effect transistors (MOSFETs) of large size were used in the amplifier and to keep a low quiescent current,these MOSFETs all work in weak *** voltage reference's temperature curvature has been further corrected by trimming a switched resistor *** circuit delivers an output voltage of 3 V with a low dropout regulator (LDO).The chip was fabricated in Taiwan Semiconductor Manufacturing Company (TSMC)'s 0.35-μm CMOS process,and the temperature coefficient (TC) was measured to be only 2.1×10 6/°C over the temperature range of 40-125 °C after *** power supply rejection (PSR) was 100 dB @ DC and the noise was 42 μV (rms) from 0.1 to 10 Hz.

关键词： Voltage reference Bandgap Temperature compensation Low drift Resistive trimming

New Technique:A low drift current reference based on PMOS temperature correction technology

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Journal of Zhejiang University-Science C(Computers and Electronics) 2012年第12期13卷 937-943页

作者： Yi-die YE Le-nian HE Ya-dan SHEN institute of very large scale integrated circuits Design Zhejiang University Hangzhou 310027 China

A low drift current reference based on PMOS temperature correction technology is *** achieve the minimum temperature coefficient(TC),the PMOS cascode current mirror is designed as a cross *** exchanging the bias for two layers of the self-biased PMOS cascode structure,the upper PMOS,which is used to adjust the TC together with the resistor of the self-biased PMOS cascode structure,is forced to work in the linear *** the proposed current reference is the on-chip current reference of a high voltage LED driver with high accuracy,it was designed using a CSMC 1 μm 40 V BCD *** shows that the TC of the reference current was only 23.8×10 6 /°C over the temperature range of 40-120 °C under the typical condition.

关键词： Current reference Cross structure PMOS cascode Temperature coefficient Low drift