New Technique:A low drift current reference based on PMOS temperature correction technology

作     者：Yi-die YE Le-nian HE Ya-dan SHEN 

作者机构：Institute of Very Large Scale Integrated Circuits Design Zhejiang University Hangzhou 310027 China 

出 版 物：《Journal of Zhejiang University-Science C(Computers and Electronics)》 (浙江大学学报C辑（计算机与电子（英文版）)

年 卷 期：2012年第13卷第12期

页      面：937-943页

核心收录：

学科分类：080904[工学-电磁场与微波技术] 0810[工学-信息与通信工程] 082704[工学-辐射防护及环境保护] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 081105[工学-导航、制导与控制] 0827[工学-核科学与技术] 081001[工学-通信与信息系统] 081002[工学-信号与信息处理] 0825[工学-航空宇航科学与技术] 0811[工学-控制科学与工程] 

主　　题：Current reference Cross structure PMOS cascode Temperature coefficient Low drift 

摘      要：A low drift current reference based on PMOS temperature correction technology is *** achieve the minimum temperature coefficient(TC),the PMOS cascode current mirror is designed as a cross *** exchanging the bias for two layers of the self-biased PMOS cascode structure,the upper PMOS,which is used to adjust the TC together with the resistor of the self-biased PMOS cascode structure,is forced to work in the linear *** the proposed current reference is the on-chip current reference of a high voltage LED driver with high accuracy,it was designed using a CSMC 1 μm 40 V BCD *** shows that the TC of the reference current was only 23.8×10 6 /°C over the temperature range of 40-120 °C under the typical condition.