A low drift curvature-compensated bandgap reference with trimming resistive circuit

作     者：Zhi-hua NING Le-nian HE 

作者机构：Institute of Very Large Scale Integrated Circuits Zhejiang University Hangzhou 310027 China 

出 版 物：《Journal of Zhejiang University-Science C(Computers and Electronics)》 (浙江大学学报C辑（计算机与电子（英文版）)

年 卷 期：2011年第12卷第8期

页      面：698-706页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 

基　　金：Project (No.2008ZX01020-001) supported by the National Science and Technology Major Project China 

主　　题：Voltage reference Bandgap Temperature compensation Low drift Resistive trimming 

摘      要：A low temperature drift curvature-compensated complementary metal oxide semiconductor (CMOS) bandgap ref-erence is proposed.A dual-differential-pair amplifier was employed to add compensation with a high-order term of TlnT (T is the thermodynamic temperature) to the traditional 1st-order compensated *** reduce the offset of the amplifier and noise of the bandgap reference,input differential metal oxide semiconductor field-effect transistors (MOSFETs) of large size were used in the amplifier and to keep a low quiescent current,these MOSFETs all work in weak *** voltage reference s temperature curvature has been further corrected by trimming a switched resistor *** circuit delivers an output voltage of 3 V with a low dropout regulator (LDO).The chip was fabricated in Taiwan Semiconductor Manufacturing Company (TSMC) s 0.35-μm CMOS process,and the temperature coefficient (TC) was measured to be only 2.1×10 6/°C over the temperature range of 40-125 °C after *** power supply rejection (PSR) was 100 dB @ DC and the noise was 42 μV (rms) from 0.1 to 10 Hz.