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Mild hyperthermia synergized chemotherapy by Bi_(2)Se_(3)/MoSe_(2)nanosaucers for cancer treatment with negligible thermal resistance

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Nano Research 2022年第9期15卷 8270-8280页

作者： Fei Gao Tingbin Zhang Yuqing Miao Huijun Ma Hui Guo Ruyi Jin Zhi Li Haifang Wang Haiming Fan Lingyun Zhao Institute of Integrative Medicine Shaanxi University of Chinese MedicineXi'an 712046China Key Laboratory of Advanced Materials Ministry of Education of ChinaSchool of Materials Science&EngineeringTsinghua UniversityBeijing 100084China College of Pharmacy Shaanxi University of Chinese MedicineXi'an 712046China Key Laboratory of Synthetic and Natural Functional Molecule Chemistry of the Ministry of Education College of Chemistry and Materials ScienceNorthwest UniversityXi’an 710069China Shaanxi Key Laboratory of Integrative Traditional Chinese and Western Medicine for Prevention and Treatment of Cardiovascular Diseases Institute of Integrative MedicineShaanxi University of Chinese MedicineXi'an 712046China

Harsh photothermal temperatures(>50℃)caused heating damage to the normal tissues and induced thermal resistance in cancer cells,which significantly limited the safety and efficacy of photothermal therapy(PTT)in cancer treatment.Mild hyperthermia(thermal efficacy,the Bi_(2)Se_(3)substrates provided large specific surface area to anchor more doxorubicin(DOX)molecules as chemotherapeutic agent.Under the stimuli of mPTT/tumor acidic microenvironment,the tumor-specific drug release and the enhanced chemotherapy could be realized,showing impressive therapeutic outcomes against 4T1 cells.The synergetic therapeutic mechanism might be attributed to the mPTT induced cell membrane permeability,and interestingly,the expression of heat shock proteins 70 was not elevated obviously after the synergetic therapy,thus to avoid the tumor thermal resistance and further improve the therapeutic effect.The in vivo anti-tumoral performance of the BMNSs was further studied and complete tumor eradication was achieved without any recurrence and biotoxicity.Not only demonstrating a paradigm of high therapeutic efficacy of mild hyperthermia and synergistic chemotherapy for precise cancer therapy,our findings proved that the cancer therapeutic effect can be improved with minimal side effects through exquisite designing of the microstructures and the physiochemical properties of the nanoplatform.

关键词： mild hyperthermia MoSe_(2)/Bi_(2)Se_(3)nanosaucers thermal resistance heat shock proteins 70

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thermal resistance Testing Technology Research of Integration High Power-LED

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Journal of Harbin Institute of Technology(New Series) 2013年第2期20卷 106-110页

作者： Ping Xue Chang-Hong Jia Xu-Sheng Wang Hao Sun Optic & Electronic Engineering Research Center Harbin University of Science and Technology

In this paper,high-power LED with many integrated chips is used as thermal resistance analysis research object, and we do thermal resistance testing technology research on it. We put forward the thermocouple point contact test method. According to the principle that LED forward voltage changes with temperature,LED heat sink to surface temperature distribution is studied directly in the test,and then we analyze the thermal resistance of high-power LED with many integrated chips when its secondary packaging is introduced. This method makes the measurement of thermal resistance of LED more rapid and convenient. It provides an effective assessment method for the analysis of high power LED device design and engineering application.

关键词： thermal resistance junction temperature integrated high power LED cooling

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thermal resistance of Common Rice Maintainer and Restorer Lines to High Temperature During Flowering and Early Grain Filling Stages

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Rice science 2012年第4期19卷 309-314页

作者： FU Guan-fu SONG Jian XIONG Jie LIAO Xi-yuan ZHANG Xiu-fu WANG Xi LE Ming-kai TAO Long-xing National Key Laboratory of Rice Biology China National Rice Research Institute

Fifteen common rice maintainer lines and 26 high-yielding restorer lines were used to evaluate their thermal resistance and fertility during flowering and early grain filling stages. The rice plants were subjected to high temperature stress （39-43 ℃） for 1-15 d from main stem flowering. Based on the heat stress index, they were divided into thermal resistant lines, semi-thermal resistant lines, semi-thermal sensitive lines and thermal sensitive lines. Therefore, the maintainer lines K22B, Bobai B and V20B belonged to thermal resistant lines, whereas 11-32B, Zhongzhe B and Zhong 9B belonged to thermal sensitive lines. For rice restorer lines, Minghui 63 had the highest thermal resistance, followed by R207, P32, P929, and the lowest thermal resistant lines P62-2-2, R8006 and P51. The correlation analysis indicated that the heat stress index was significantly correlated with seed-setting rate and abortive grain rate under heat stress, but not under natural conditions. This indicated that heat stress occurred during flowering and early grain filling stages mainly decreased the seed- setting rate and significantly increased the abortive grain rate in both rice maintainer and restorer lines.

关键词： rice maintainer line restorer line heat stress fertility thermal resistance

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Effect of microstructure of Au80Sn20 solder on the thermal resistance TO56 packaged GaN-based laser diodes

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Journal of Semiconductors 2020年第10期41卷 29-32页

作者： Hao Lin Deyao Li Liqun Zhang Pengyan Wen Shuming Zhang Jianping Liu Hui Yang School of Materials Science and Engineering Shanghai UniversityShanghai 201900China Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of SciencesSuzhou 215123China

Au80Sn20 alloy is a widely used solder for laser diode packaging.In this paper,the thermal resistance of Ga N-based blue laser diodes packaged in TO56 cans were measured by the forward voltage method.The microstructures of Au80Sn20 solder were then investigated to understand the reason for the difference in thermal resistance.It was found that the microstructure with a higher content of Au-rich phase in the center of the solder and a lower content of(Au,Ni)Sn phase at the interface of the solder/heat sink resulted in lower thermal resistance.This is attributed to the lower thermal resistance of Au-rich phase and higher thermal resistance of(Au,Ni)Sn phase.

关键词： Au80Sn20 laser diodes package thermal resistance

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Scalable Multi-harmonic Large-Signal Model for AlGaN/GaN HEMTs Including a Geometry-Dependent thermal resistance

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Chinese Journal of Electronics 2017年第5期26卷 952-959页

作者： WANG Changsi XU Yuehang WEN Zhang CHEN Zhikai XU Ruimin School of Electronic Engineering University of Electronic Science and Technology of China

A scalable large-signal model of AlGa N/Ga N High electron mobility transistors(HEMTs)suitable for multi-harmonic characterizations is presented.This model is fulfilled utilizing an improved drain-source current(Ids) formulation with a geometry-dependent thermal resistance(Rth) and charge-trapping modification.The Idsmodel is capable of accurately modeling the highorder transconductance(gm),which is significant for the prediction of multi-harmonic characteristics.The thermal resistance is identified by the electro-thermal Finite element method(FEM) simulations,which are physically and easily scalable with the finger numbers,unit gate width and power dissipations of the device.Accurate predictions of the quiescent currents,S-parameters up to 40 GHz,and large-signal harmonic performance for the devices with different gate peripheries have been achieved by the proposed model.

关键词： GaN HEMTs Large-signal model Scalable model thermal resistance

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Evaluation of the drain–source voltage effect on AlGaAs/InGaAs PHEMTs thermal resistance by the structure function method

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Journal of Semiconductors 2014年第9期35卷 60-64页

作者：马琳冯士维张亚民邓兵岳元 Institute of Semiconductor Device Reliability Physics College of Electronic Information & Control EngineeringBeijing University of Technology

The effect of drain-source voltage on A1GaAs/InGaAs PHEMTs thermal resistance is studied by experimental measuring and simulation. The result shows that A1GaAs/InGaAs PHEMTs thermal resistance presents a downward trend under the same power dissipation when the drain-source voltage （VDs） is decreased. Moreover, the relatively low VDS and large drain-source current （IDs） result in a lower thermal resistance. The chip-level and package-level thermal resistance have been extracted by the structure function method. The simulation result indicated that the high electric field occurs at the gate contact where the temperature rise occurs. A relatively low VDS leads to a relatively low electric field, which leads to the decline of the thermal resistance.

关键词： AIGaAs/InGaAs PHEMTs structure function method thermal resistance drain-source voltage

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Deep submicron PDSOI thermal resistance extraction

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Journal of Semiconductors 2010年第9期31卷 14-16页

作者：卜建辉毕津顺习林茂韩郑生 Institute of Microelectronics Chinese Academy of Sciences

Deep submicron partially depleted silicon on insulator（PDSOI） MOSFETs with H-gate were fabricated based on the 0.35μm SOI process developed by the Institute of Microelectronics of the Chinese Academy of Sciences. Because the self-heating effect（SHE） has a great influence on SOI,extractions of thermal resistance were done for accurate circuit simulation by using the body-source diode as a thermometer.The results show that the thermal resistance in an SOI NMOSFET is lower than that in an SOI PMOSFET;and the thermal resistance in an SOI NMOSFET with a long channel is lower than that with a short channel.This offers a great help to SHE modeling and parameter extraction.

关键词： thermal resistance self heating effect PDSOI

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thermal resistance Calculation Method of High-power LEDs

Thermal Resistance Calculation Method of High-power LEDs

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2007亚洲显示国际会议

作者： Zhiling Ma Xueren Zheng School of Physics South China University of Technology Guangzhou 510640 China

＜正＞Estimation method of thermal resistance of high-power LED to predict junction temperature in the early stage of design is important to make good thermal management.Methods based on infinite series techniques require the summation of a large number of terms with coefficients that depend on boundary conditions leading to lengthy expressions whose relation- ship with the geometry of system is difficult to establish.Numerical simulation methods based on FEM or FDM are often of little help in early stages of design,because they require a great effort to precisely define the problem.The method present in this paper is based on the constant angle heat spreading model,taking the border effect into account,yields the accurate results over the whole range of chip dimensions and substrate thickness conditions.In this paper we assume the sidewalls and the top of the LED package to be adiabatic with the bottom surface bonded to the heat sink.A special func- tion is used to replace a segmented function to keep the model continuous.The final expression of thermal resistance calcu- lation for circular chip is consistent for all the border parameters.After we derive the model of circular power dissipation element of radius r on a substrate of thickness h,with a heat-spreading angle α,author discussed that under the condition of multilayer structures the spreading angle will change.

关键词： thermal resistance Border Effect Spreading angle Light-emitting diodes（LEDs）

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Effect of thermal Acclimation on thermal Preference,resistance and Locomotor Performance of Hatchling Soft-shelled Turtle

Effect of Thermal Acclimation on Thermal Preference,Resistan...

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浙江省动物学会第十二届会员代表大会暨学术讨论会

作者： Mei-Xian WU Ling-Jun HU Wei DANG Hong-Liang LU Wei-Guo DU Hangzhou Key Laboratory for Animal Adaptation and Evolution School of Life and Environmental SciencesHangzhou Normal University Xiaoshan College of Science and Technology Zhejiang Ocean University Key Laboratory of Animal Ecology and Conservation Biology Institute of ZoologyChinese Academy of Sciences

The significant influence of thermal acclimation on physiological and behavioral performance has been documented in many ectothermic animals,but such studies are still limited in turtle species.We acclimated hatchling soft-shelled turtles(Pelodiscus sinensis) under three thermal conditions(10,20 and 30℃) for 4 weeks,and then measured selected body temperature (T).critical thermal minimum(CT) and maximum(CT).and locomotor performance at different body temperatures.thermal acclimation significantly affected thermal preference and resistance of P.sinensis hatchlings.Hatchling turtles acclimated to 10℃selected relatively lower body temperatures and were less resistant to high temperatures than those acclimated to 20℃and 30℃.The turtles’ resistance to low temperatures increased with a decreasing acclimation temperature.The thermal resistance range(i.***.the difference between CT and CT,TRR) was widest in turtles acclimated to 20℃,and narrowest in those acclimated to 10℃.The locomotor performance of turtles was affected by both body temperature and acclimation temperature.Hatchling turtles acclimated to relatively higher temperatures swam faster than did those acclimated to lower temperatures.Accordingly,hatchling turtles acclimated to a particular temperature may not enhance the performance at that temperature.Instead,hatchlings acclimated to relatively warm temperatures have a better performance,supporting the "hotter is better" hypothesis.

关键词： Pelodiscus sinensis thermal acclimation thermal resistance locomotor performance

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Dependence of IGBT Junction-Case Steady State thermal resistance on Heating Current

Dependence of IGBT Junction-Case Steady State Thermal Resist...

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2010 3rd International Conference on Computer and Electrical Engineering(ICCEE 2010)

作者： Ming Chen Yong Tang Bo Wang National Key Laboratory for Vessel Integrated Power System Technology Naval University of Engineering

High heating current dependence of the IGBT module junction-case steady state thermal resistance is investigated. The conception of the thermal resistance and the physical structure of the IGBT module and the thermal impedance test principle are briefly introduced. The junction-case thermal resistance can be deduced by Finite Element Method in the numerical simulator ANSYS. The transient thermal impedance curve and the junction-case steady state thermal resistance of a certain type of IGBT are obtained by the thermal resistance test experiments. It’s found that the junction-case steady state thermal resistance decreased when the heating current increased. When the high heating current reaches a certain level, the steady state thermal resistance becomes a constant.

关键词： IGBT thermal resistance junction temperature heating current transient thermal impedance case temperature

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