Evaluation of the drain–source voltage effect on AlGaAs/InGaAs PHEMTs thermal resistance by the structure function method

作     者：马琳 冯士维 张亚民 邓兵 岳元 

作者机构：Institute of Semiconductor Device Reliability Physics College of Electronic Information & Control EngineeringBeijing University of Technology 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2014年第35卷第9期

页      面：60-64页

核心收录：

学科分类：0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0702[理学-物理学] 

基　　金：Project supported by the National Natural Science Foundation of China(Nos.61376077,61201046,61204081) the Beijing Natural Science Foundation(Nos.4132022,4122005) the Guangdong Strategic Emerging Industry Project of China(No.2012A080304003) the Doctoral Fund of Innovation of Beijing University of Technology 

主　　题：AIGaAs/InGaAs PHEMTs structure function method thermal resistance drain-source voltage 

摘      要：The effect of drain-source voltage on A1GaAs/InGaAs PHEMTs thermal resistance is studied by experimental measuring and simulation. The result shows that A1GaAs/InGaAs PHEMTs thermal resistance presents a downward trend under the same power dissipation when the drain-source voltage （VDs） is decreased. Moreover, the relatively low VDS and large drain-source current （IDs） result in a lower thermal resistance. The chip-level and package-level thermal resistance have been extracted by the structure function method. The simulation result indicated that the high electric field occurs at the gate contact where the temperature rise occurs. A relatively low VDS leads to a relatively low electric field, which leads to the decline of the thermal resistance.