Scalable Multi-harmonic Large-Signal Model for AlGaN/GaN HEMTs Including a Geometry-Dependent Thermal Resistance

作     者：WANG Changsi XU Yuehang WEN Zhang CHEN Zhikai XU Ruimin 

作者机构：School of Electronic EngineeringUniversity of Electronic Science and Technology of China 

出 版 物：《Chinese Journal of Electronics》 (电子学报(英文))

年 卷 期：2017年第26卷第5期

页      面：952-959页

核心收录：

学科分类：0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0701[理学-数学] 

基　　金：supported by the National Natural Science Foundation of China(No.61474020) the National Key Project of Science and Technology 

主　　题：GaN HEMTs Large-signal model Scalable model Thermal resistance 

摘      要：A scalable large-signal model of AlGa N/Ga N High electron mobility transistors(HEMTs)suitable for multi-harmonic characterizations is presented.This model is fulfilled utilizing an improved drain-source current(Ids) formulation with a geometry-dependent thermal resistance(Rth) and charge-trapping modification.The Idsmodel is capable of accurately modeling the highorder transconductance(gm),which is significant for the prediction of multi-harmonic characteristics.The thermal resistance is identified by the electro-thermal Finite element method(FEM) simulations,which are physically and easily scalable with the finger numbers,unit gate width and power dissipations of the device.Accurate predictions of the quiescent currents,S-parameters up to 40 GHz,and large-signal harmonic performance for the devices with different gate peripheries have been achieved by the proposed model.