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Fluoro-substituted DPP-bisthiophene conjugated polymer with azides in the side chains as ambipolar semiconductor and photoresist

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Science China Chemistry 2022年第9期65卷 1791-1797页

作者： Wenlin Jiang Xiaobo Yu Cheng Li Xisha Zhang Guanxin Zhang Zitong Liu Deqing Zhang Beijing National Laboratory for Molecular Sciences Organic Solids LaboratoryInstitute of ChemistryChinese Academy of SciencesBeijing 100190China State Key Laboratory of Applied Organic Chemistry(SKLAOC) Key Laboratory of Special Function Materials and Structure DesignCollege of Chemistry and Chemical EngineeringLanzhou UniversityLanzhou 730000China School of Chemical Sciences University of Chinese Academy of SciencesBeijing 100049China

photoresists are essential for the fabrication of flexible electronics through all-photolithographic processes.Single component semiconducting photoresist exhibits both semiconducting and photo-patterning properties,and as a result,the device fabrication process can be simplified.However,the design of semiconducting polymeric photoresist with ambipolar semiconducting property remains challenging.In this paper,we report a single component semiconducting photoresist(PFDPPF4T-N_(3))by incorporating azide groups and noncovalent conformation locks into the side alkyl chains and conjugated backbones of a diketopyrrolopyrrole-based conjugated polymer,respectively.The results reveal that PFDPP4FT-N_(3) exhibits ambipolar semiconducting property with hole and electron mobilities up to 1.12 and 1.17 cm^(2) V^(−1) s^(−1),respectively.Moreover,field effect transistors with the individual photo-patterned thin films of PFDPP4FT-N_(3) also show ambipolar semiconducting behavior with hole and electron mobilities up to 0.66 and 0.80 cm^(2) V^(−1) s^(−1),respectively.These results offer a simple yet effective design strategy for high-performance single component semiconducting photoresists,which hold great potential for flexible electronics processed by all-photolithography.

关键词： conjugated polymer ambipolar semiconductor photoresist noncovalent conformation lock diketopyrrolopyrrole

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Synthesis and Properties of UV-curable Hyperbranched Polyurethane and Its Application in the Negative-type photoresist

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Journal of Wuhan University of Technology(Materials Science) 2014年第1期29卷 208-212页

作者：刘敬成 LIN Licheng JIA Xiuli LIU Ren ZHANG Shengwen 刘晓亚 School of Chemical and Material Engineering Jiangnan University

UV-curable hyperbranched polyurethane （UV-HBPU） containing carboxyl groups was synthesized from isophorone diisocyanate （IPDI）, diethanolamine （DEOA）, polyethylene glycol （PEG-400）, hydroxyethyl acrylate （HEA）, and 2,2-his （hydroxymethyl） propionic acid （DMPA）. The UV-HBPU was used as a negative-type photoresist for a printed circuit board （PCB）. Fourier-transform infrared spectroscopy （FTIR） and proton nuclear magnetic resonance （1HNMR） spectroscopy of UV-HBPUs indicated that the synthesis was successful. Differential scanning calorimetry （DSC） and thermogravimetric analysis （TGA） showed that the thermal stability of the UV-HBPUs decreased as the HEA content increased. The polymer exhibited excellent photoresist properties, and the resolution of circuits based on this negative-type photoresist reached 10 μm.

关键词： UV-curable hyperbranched polyurethane photoresist

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Fabrication of Diffraction-limited Full Aperture Microlens Array by Melting photoresist

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High Technology Letters 1997年第1期3卷 5-9页

作者：高应俊

A further study on the fabrication of diffraction--limited full aperture microlens array by melting photoresist is described. The formation of aspherical surface is considered. The parameters for controlling the process of lens production, the height of original photoresist cylinders and the angle of contact between the melted photoresist and the substrate, are discussed in detail. The diffraction limited full--aperture microlens arrays have been obtained,and some measurement results are shown in the paper. A method of controlling the formation of quality microlens array in real time is suggested.

关键词： Microlens array Melting photoresist Diffraction-limited

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AZ~ 15nXT photoresist for Lift-off Applications

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高分子通报 2014年第12期 170-178页

作者： CHEN Chun-wei TOUKHY Medhat BOGUSZ Zachary MEYER Stephen LIU Wei-hong LU Ping-hung AZ Electronic Materials USA Corp.(A Subsidiary of Merck KGaA DarmstadtGermany)

AZ15nXT is a chemically-amplified negative-tone thick film photoresist.The resist has vertical profile and is widely used for redistribution layer(RDL)and through silicon vias(TSV)applications.For lift-off applications,however,the inverted profile is needed.In this paper,we report the effects of process conditions on the resist profile and process window for lift off applications.

关键词： Chemically amplified Thick film Lift-off Negative photoresist Inverted profile

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Generating Microstructures with Highly Variable Mechanical Performance using Two-Photon Lithography and Thiol-ene Photopolymerization

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Chinese Journal of Polymer Science 2023年第1期41卷 67-74页

作者： Xiao Yang Yan-Fang Niu Meng-Xiao Wei Jun-Ning Zhang Ke-Liang Liu Xin Du Zhong-Ze Gu State Key Laboratory of Bioelectronics School of Biological Science and Medical EngineeringSoutheast UniversityNanjing210096China

In this study,we investigate the effect of the exposure dose on the mechanical property of the photoresins generated with acrylate self-polymerization and thiol-ene polymerization.The results indicate that the mechanical performance of the thiol-ene photoresin is highly depended on the exposure dose during the solidification process.With 350-fold exposure dose change,the stiffness of the thiol-ene photoresin reached more that 700-fold change compare to 14-fold of the acrylate photoresin.We developed a TPL photoresist based on our results and show the capability to fabricate microstrucutres with high resolution and variable mechanical performances using this method.

关键词： Thiol-ene Two photo lithography 3D printing photoresist

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Te-free SbBi thin film as a laser heat-mode photoresist

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Chinese Optics Letters 2019年第9期17卷 105-108页

作者：张奎王正伟陈国东王阳曾爱军朱菁 Syarhei Avakaw Heorgi Tsikhanchuk Laboratory of Micro-Nano Optoelectronic Materials and Devices Key Laboratory of Materials for High-Power LaserShanghai Institute of Optics and Fine MechanicsChinese Academy of SciencesShanghai 201800China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China KBTEM-OMO Joint Stock Company Minsk 220033Republic of Belarus

A Te-free binary phase change material Sb Bi is proposed as a new inorganic photoresist for heat-mode lithography. It shows good film-forming ability(surface roughness <1 nm), low threshold power for crystallization(2 m W), and high etching selectivity(15:1). Line-type, dot-type, and complex pattern structures with the smallest feature size of 275 nm are fabricated on Sb Bi thin films using a 405 nm diode laser direct writing system. In addition, the excellent grating structures with a period of 0.8 μm demonstrate that thermal interference does not affect the adjacent microstructures obviously. These results indicate that Sb Bi is a promising laser heat-mode resist material for micro/nanostructure fabrication.

关键词： Te-free SbBi laser heat-mode photoresist

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Full-color micro-LED display with high color stability using semipolar(20-21) InGaN LEDs and quantum-dot photoresist

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Photonics Research 2020年第5期8卷 630-636页

作者： SUNG-WEN HUANG CHEN YU-MING HUANG KONTHOUJAM JAMES SINGH YU-CHIEN HSU FANG-JYUN LIOU JIE SONG JOOWON CHOI PO-TSUNG LEE CHIEN-CHUNG LIN ZHONG CHEN JUNG HAN TINGZHU WU HAO-CHUNG KUO Department of Photonics&Graduate Institute of Electro-Optical Engineering College of Electrical and Computer EngineeringTaiwan Chiao Tung UniversityHsinchu 30010China Institute of Photonic System Taiwan Chiao Tung UniversityTainan 71150China Saphlux Inc. BranfordConnecticut 06405USA Departm ent of Electronic Science Fujian Engineering Research Center for Solid-State LightingXiamen UniversityXiamen 361005China Departm ent of Electrical Engineering Yale UniversityNew HavenConnecticut 06520USA

Red-green-blue(RGB)full-color micro light-emitting diodes(μ-LEDs)fabricated from semipolar(20-21)wafers,with a quantum-dot photoresist color-conversion layer,were demonstrated.The semipolar(20-21)In Ga N/Ga Nμ-LEDs were fabricated on large(4 in.)patterned sapphire substrates by orientation-controlled epitaxy.The semipolarμ-LEDs showed a 3.2 nm peak wavelength shift and a 14.7%efficiency droop under 200 A∕cm2injected current density,indicating significant amelioration of the quantum-confined Stark effect.Because of the semipolarμ-LEDs’emission-wavelength stability,the RGB pixel showed little color shift with current density and achieved a wide color gamut(114.4%NTSC space and 85.4%Rec.2020).

关键词： LEDs photoresist sapphire

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Acidic Polyester Imides as Thermally Stable Binder Polymers for Negative-Tone Black photoresist

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Materials Sciences and Applications 2020年第4期11卷 234-244页

作者： Genggongwo Shi Kyeongha Baek Jun Bae Lee Soon Park School of Material Science and Engineering Ulsan National Institute of Science and Technology (UNIST) Ulsan South Korea CCTech. Co. Ltd. Hwaseong South Korea Duksan Neolux Co. Ltd. Cheonan South Korea

Polyimides are well-known for their high chemical inertness and thermal stability. However, it is usually challenging to synthesize UV-curable polyimides since the imidization reaction requires such harsh conditions that acrylate type double bonds cannot withstand. In this work, synthetic methods are developed to obtain polyester-imide type binder polymers with high thermal stability, high compatibility with the other components of the black photoresist, and fine photolithographic patterning property for the negative-tone black photoresist. The syntheses of diimide-diacid or diimide-diol intermediates for the polyesterification with dianhydride gave polyester imides which meets this requirement. The photolithographic tests have shown that the patterning of the micron-sized PDL of the organic light emitting diode (OLED) panel could be obtained. This work will interest the researchers working on the design and optimization of thermally stable binder polymers.

关键词： Polyester Imide One-Pot Solution Polymerization Black photoresist Photolithography

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Research on the process of fabricating a multi-layer metal micro-structure based on UV-LIGA overlay technology

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Nanotechnology and Precision Engineering 2019年第2期2卷 83-88页

作者： Yali Ma Wenkai Liu Chong Liu Department of Military Materials Distribution Army Military Transportation UniversityTianjin 300161China School of Mechanical Engineering Dalian University of TechnologyDalian 116023China

In this paper,we report the study of the process of fabricating a multi-layermetal micro-structure using UV-LIGA overlay technology,includingmask fabrication,substrate treatment,and UV-LIGA overlay processes.To solve the process problems in the masking procedure,the swelling problemof the first layer of SU-8 thick photoresist was studied experimentally.The 5μmline-width compensation and closed 20μmand 30μmisolation strips were designed and fabricated around the micro-structure pattern.The pore problemin the Ni micro-electroforming layer was analyzed and the electroforming parameters were improved.The pH value of the electroforming solution should be controlled between 3.8 and 4.4 and the current density should be below 3 A/dm^2.To solve the problems of high inner stress and incomplete development of the micro-cylinder hole array with a diameter of 30μm,the lithography process was optimized.The pre-baking temperature was increased via gradient heating and rose every 5℃ from 65℃ to 85℃ and then remained at 85℃ for 50 min–1 h.In addition,the full contact exposure was used.Finally,a multi-layer metal micro-structure with high precision and good quality of microelectroforming layer was fabricated using UV-LIGA overlay technology.

关键词： UV-LIGA overlay technology SU-8 photoresist Micro-electroforming technology Multi-layer metal micro-structure

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Research on the Mechanism of Multilayer Reactive Ion Etching

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Plasma Science and Technology 2013年第8期15卷 825-829页

作者：于斌斌袁军堂汪振华胡小秋 Nanjing University of Science and Technology

Dry etching has now become one of the key processes of high ratio of depth to width microstructure and fine patterning. This paper presents a new dry etching technology - multilayer reactive ion etching technology （MRIE）. By taking full advantage of the spatial layout of the chamber, arranging multi-layer electrodes and transporting the discharged gas by a layered air supply device, the function of simultaneous etching in every reaction chamber （layer） is realized. This method can significantly enhance the productivity. Taking the photoresist etching by MRIE as an example, the law and mechanism influencing the etching rate and uniformity were analyzed for different conditions. The result shows that when plate distance is 50/55/60 mm （from bottom to top）, and vacuum degree, ratio of O2 to Ar, RF source power, and continuous etching time are respectively 40 Pa, 1/2, 600 W, and 20 min, the optimal process is achieved. The average etching rate and uniformity are 143.93 A/min and 9.8%, respectively.

关键词： MRIE etching rate uniformity photoresist

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