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Analyses of temperature-dependent interface states,series resistances,and AC electrical conductivities of Al/p Si and Al/Bi_4Ti_3O_(12)/p Si structures by using the admittance spectroscopy method

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Chinese Physics B 2013年第10期22卷 608-613页

作者： Mert Ylldlrlm Perihan Durmus Semsettin Altlndal Department of Physics Faculty of Arts & SciencesDüzce University Department of Physics Faculty of SciencesGazi University

In this study, Al/p-Si and Al/Bi4Ti3O12/p-Si structures are fabricated and their interface states （Nss）, the values of series resistance （Rs）, and AC electrical conductivity （σac） are obtained each as a function of temperature using admit- tance spectroscopy method which includes capacitance-voltage （C-V） and conductance-voltage （G-V） measurements. In addition, the effect of interfacial Bi4Ti3012 （BTO） layer on the performance of the structure is investigated. The voltage- dependent profiles of Nss and Rs are obtained from the high-low frequency capacitance method and the Nicollian method, respectively. Experimental results show that Nss and Rs, as strong functions of temperature and applied bias voltage, each exhibit a peak, whose position shifts towards the reverse bias region, in the depletion region. Such a peak behavior is attributed to the particular distribution of Nss and the reordering and restructuring of Nss under the effect of temperature. The values of activation energy （Ea）, obtained from the slope of the Arrhenius plot, of both structures are obtained to be bias voltage-independent, and the Ea of the metal-ferroelectric-semiconductor （MFS） structure is found to be half that of the metal-semiconductor （MS） structure. Furthermore, other main electrical parameters, such as carrier concentration of acceptor atoms （NA）, built-in potential （Vbi）, Fermi energy （EF）, image force barrier lowering （△φb）, and barrier height （φb）, are extracted using reverse bias C 2-V characteristics as a function of temperature.

关键词： MFS structures bismuth titanate temperature dependent activation energy AC electrical con-ductivity

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Ferroelectric and dielectric properties of La/Mn co-doped Bi_4Ti_3O_12 ceramics

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Chinese Physics B 2010年第3期19卷 539-545页

作者：吴云翼王晓慧李龙土 State Key Laboratory of New Ceramics and Fine Processing Department of Materials Science and EngineeringTsinghua University

La/Mn co-doped Bi4Ti3O12 ceramics, Bi3.25La0.75Ti3-xMnxO12 （x = 0.02, 0.04, 0.06, 0.08）, were prepared by the solid-state reaction method. The influence of manganese substitution for the titanium part in Bi3.25La0.75Ti3O12 on the sintering behaviour, microstructure, Raman spectra and electrical properties was investigated. The experimental results show that the phase composition of all samples with and without manganese doping, sintered at 1000 ℃, consists of a single phase with a bismuth-layered structure belonging to the crystalline phase Bi4Ti3O12. There is no evidence of any impurity phase, but a small change in crystallographic orientation is observed. The Curie temperature of Bi3.25La0.75Ti3-xMnxO12 ceramics is steadily shifted to lower temperature with increasing Mn-doping content. Moreover, the remnant polarisation （Pr） of Bi3.25La0.75Ti3- xMnxO12 samples increases with Mn-doping content, and the Bi3.25La0.75Ti2.92Mn0.08O12 sample exhibits the largest Pr of 16.6 μC/cm^2.

关键词： bismuth titanate ceramics doping ferroelectric

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Effect of Bi_2 Ti_2O_7 Seeding Layer on Capacitance-voltage Properties of Bi_(3.54)Nd_(0.46)Ti_3O_(12) Films

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Journal of Materials Science & Technology 2010年第3期26卷 206-210页

作者： Huizhong Xu Liang Zhen Changhong Yang Zhuo Wang School of Materials Science and Engineering Harbin Institute of Technology Harbin 150001 China School of Environment and Materials Engineering Yantai University Yantai 264005 China

Au/Bi 3.54 Nd 0.46 Ti 3 O 12 /Bi 2 Ti 2 O 7 /Si structure has been fabricated with a preferentially （111）-orientated Bi 2 Ti 2 O 7 seeding layer as a ferroelectric gate of metal-ferroelectric-insulator field effect transistor.Bi 3.54 Nd 0.46 Ti 3 O 12 and Bi 3.54 Nd 0.46 Ti 3 O 12 /Bi 2 Ti 2 O 7 films are both well-crystallized when annealed at 680℃ for 40 min,and have smooth,dense and crack-free surfaces.The width of memory window of the ferroelectric gate increases with increasing electric field applied to the Bi 3.54 Nd 0.46 Ti 3 O 12 thin films.The width of memory window of Au/Bi 3.54 Nd 0.46 Ti 3 O 12 /Bi 2 Ti 2 O 7 /Si with seeding layer is relatively wider than that of Au/Bi 3.54 Nd 0.46 Ti 3 O 12 /Si at the same bias voltage,and the counterclockwise hysteresis curve of Au/Bi 3.54 Nd 0.46 Ti 3 O 12 /Bi 2 Ti 2 O 7 /Si is referred to as polarization type switching at different voltages.Bi 2 Ti 2 O 7 seeding layer plays an important role in alleviating the element interdiffusion between Bi 3.54 Nd 0.46 Ti 3 O 12 and Si.

关键词： Metalorganic decomposition bismuth titanate Ferroelectric materials

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Hysteresis loop behaviors of ferroelectric thin films: A Monte Carlo simulation study

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Chinese Physics B 2015年第11期24卷 492-496页

作者： C.M.Bedoya-Hincapié H.H.Ortiz-varez E.Restrepo-Parra J.J.Olaya-Flrez J.E.Alfonso PCM Computational Applications Universidad Nacional de Colombia Univesidad Santo Tomás Universidad de Caldas AFIS Análisis de Fallas Integridad y Superficies Universidad Nacional de Colombia Grupo de Ciencia de Materialesy superficies Departamento de Física Universidad Nacional de Colombia

The ferroelectric response of bismuth titanate Bi4Ti3O12 （BIT） thin film is studied through a Monte Carlo simulation of hysteresis loops. The ferroelectric system is described by using a Diffour Hamiltonian with three terms： the electric field applied in the z direction, the nearest dipole-dipole interaction in the transversal （x-y） direction, and the nearest dipole-dipole interaction in the direction perpendicular to the thin film （the z axis）. In the sample construction, we take into consideration the dipole orientations of the monoclinic and orthorhombic structures that can appear in BIT at low temperature in the ferroelectric state. The effects of temperature, stress, and the concentration of pinned dipole defects are assessed by using the hysteresis loops. The results indicate the changes in the hysteresis area with temperature and stress, and the asymmetric hysteresis loops exhibit evidence of the imprint failure mechanism with the emergence of pinned dipolar defects. The simulated shift in the hysteresis loops conforms to the experimental ferroelectric response.

关键词： ferroelectrics bismuth titanate hysteresis loop dipolar defects

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Dielectric properties of bismuth-containing pyrochlores:A comparative analysis

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Journal of Advanced Dielectrics 2022年第2期12卷 29-35页

作者： M.V.Talanov E.V.Glazunova V.I.Kozlov S.P.Kubrin A.A.Bush V.M.Talanov K.E.Kamentsev Research Institute of Physics Southern Federal University av.Stachki 193 Rostov-on-Don344090Russia Research Institute of Solid State Electronics Materials MIREA-Russian Technological University(RTU MIREA)5th Street of Sokolinaya Gora 22 Moscow 119454Russia Technological Department Platov South-Russian State Polytechnic University(NPI)Prosvescheniya Str.132 Novocherkassk 346428Russia

The comparative analysis of the dielectric properties of bismuth-containing pyrochlores with different manifestation of atomic order/disorder was carried out.We examined the dielectric properties(including behavior in electric fields)of two pyrochlore compounds:BZN(presumably a composition close to Bi_(1.5)Zn_(0.5)Nb_(1.5)O_(6.5))ceramics with chemical disorder in both A and B cation sublattices and Bi_(2)Ti_(2)O_(7)single crystal with fully chemical ordered structure.The fundamental differences between the dielectric properties of the BZN ceramics and Bi_(2)Ti_(2)O_(7)single crystal were shown.In particular,in the dielectric relaxation behavior(which cannot be described via Arrhenius law in the Bi_(2)Ti_(2)O_(7))or in the influence of the electric fields on the dielectric permittivity(split-ting of the field-cooled and zero-field-cooled behaviors was observed for Bi_(2)Ti_(2)O_(7)below estimated freezing temperature).The results of this study highlights the special role of Bi_(2)Ti_(2)O_(7)as a candidate material for studying aspects of geometric frustration related with pyrochlore structure in non-magnetic medium and specifies the future directions of research.

关键词： Pyrochlores relaxor behavior bismuth titanate dielectric permittivity geometric frustration

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Dielectric properties of amorphous Bi-Ti-O thin films

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Journal of Advanced Dielectrics 2021年第2期11卷 1-5页

作者： R.Sun W.Xu R.B.van Dover Department of Materials Science and Engineering Cornell University IthacaNY 14853USA Department of Applied and Engineering Physics Cornell University IthacaNY 14853USA

We report the unexpectedly excellent dielectric properties of amorphous thin films with compositions in the Bi-Ti-O system.Films were deposited by RF magnetron reactive co-sputtering.In the composition range of 0.5 详细信息

关键词： bismuth titanate amorphous thin films composition spread co-sputtering.

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