Hysteresis loop behaviors of ferroelectric thin films: A Monte Carlo simulation study

作     者：C.M.Bedoya-Hincapié H.H.Ortiz-varez E.Restrepo-Parra J.J.Olaya-Flrez J.E.Alfonso 

作者机构：PCM Computational Applications Universidad Nacional de Colombia Univesidad Santo Tomás Universidad de Caldas AFIS Análisis de Fallas Integridad y Superficies Universidad Nacional de Colombia Grupo de Ciencia de Materialesy superficies Departamento de Física Universidad Nacional de Colombia 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2015年第24卷第11期

页      面：492-496页

核心收录：

学科分类：07[理学] 070205[理学-凝聚态物理] 0805[工学-材料科学与工程（可授工学、理学学位）] 0704[理学-天文学] 0702[理学-物理学] 

基　　金：sponsored by the research departments of the Universidad Nacional de Colombia DIMA and DIB under Project 201010018227-"Crecimientoy caracterización eléctrica y estructural de películas delgadas de BixTiyOz producidas mediante Magnetrón Sputtering" Project 12920-"Desarrollo teóricoexperimental de nanoestructuras basadas en Bismutoy materiales similares" "Bisnano Project" 

主　　题：ferroelectrics bismuth titanate hysteresis loop dipolar defects 

摘      要：The ferroelectric response of bismuth titanate Bi4Ti3O12 （BIT） thin film is studied through a Monte Carlo simulation of hysteresis loops. The ferroelectric system is described by using a Diffour Hamiltonian with three terms： the electric field applied in the z direction, the nearest dipole-dipole interaction in the transversal （x-y） direction, and the nearest dipole-dipole interaction in the direction perpendicular to the thin film （the z axis）. In the sample construction, we take into consideration the dipole orientations of the monoclinic and orthorhombic structures that can appear in BIT at low temperature in the ferroelectric state. The effects of temperature, stress, and the concentration of pinned dipole defects are assessed by using the hysteresis loops. The results indicate the changes in the hysteresis area with temperature and stress, and the asymmetric hysteresis loops exhibit evidence of the imprint failure mechanism with the emergence of pinned dipolar defects. The simulated shift in the hysteresis loops conforms to the experimental ferroelectric response.