Effect of Bi_2 Ti_2O_7 Seeding Layer on Capacitance-voltage Properties of Bi_(3.54)Nd_(0.46)Ti_3O_(12) Films
Effect of Bi_2 Ti_2O_7 Seeding Layer on Capacitance-voltage Properties of Bi_(3.54)Nd_(0.46)Ti_3O_(12) Films作者机构:School of Materials Science and Engineering Harbin Institute of Technology Harbin 150001 China School of Environment and Materials Engineering Yantai University Yantai 264005 China
出 版 物:《Journal of Materials Science & Technology》 (材料科学技术(英文版))
年 卷 期:2010年第26卷第3期
页 面:206-210页
核心收录:
学科分类:081702[工学-化学工艺] 082903[工学-林产化学加工工程] 08[工学] 0817[工学-化学工程与技术] 0806[工学-冶金工程] 0829[工学-林业工程] 0805[工学-材料科学与工程(可授工学、理学学位)] 0703[理学-化学] 0802[工学-机械工程] 082201[工学-制浆造纸工程] 0822[工学-轻工技术与工程] 0801[工学-力学(可授工学、理学学位)] 0702[理学-物理学]
主 题:Metalorganic decomposition Bismuth titanate Ferroelectric materials
摘 要:Au/Bi 3.54 Nd 0.46 Ti 3 O 12 /Bi 2 Ti 2 O 7 /Si structure has been fabricated with a preferentially (111)-orientated Bi 2 Ti 2 O 7 seeding layer as a ferroelectric gate of metal-ferroelectric-insulator field effect *** 3.54 Nd 0.46 Ti 3 O 12 and Bi 3.54 Nd 0.46 Ti 3 O 12 /Bi 2 Ti 2 O 7 films are both well-crystallized when annealed at 680℃ for 40 min,and have smooth,dense and crack-free *** width of memory window of the ferroelectric gate increases with increasing electric field applied to the Bi 3.54 Nd 0.46 Ti 3 O 12 thin *** width of memory window of Au/Bi 3.54 Nd 0.46 Ti 3 O 12 /Bi 2 Ti 2 O 7 /Si with seeding layer is relatively wider than that of Au/Bi 3.54 Nd 0.46 Ti 3 O 12 /Si at the same bias voltage,and the counterclockwise hysteresis curve of Au/Bi 3.54 Nd 0.46 Ti 3 O 12 /Bi 2 Ti 2 O 7 /Si is referred to as polarization type switching at different *** 2 Ti 2 O 7 seeding layer plays an important role in alleviating the element interdiffusion between Bi 3.54 Nd 0.46 Ti 3 O 12 and Si.