Effect of Bi_2 Ti_2O_7 Seeding Layer on Capacitance-voltage Properties of Bi_(3.54)Nd_(0.46)Ti_3O_(12) Films

作     者：Huizhong Xu Liang Zhen Changhong Yang Zhuo Wang 

作者机构：School of Materials Science and Engineering Harbin Institute of Technology Harbin 150001 China School of Environment and Materials Engineering Yantai University Yantai 264005 China 

出 版 物：《Journal of Materials Science & Technology》 (材料科学技术（英文版）)

年 卷 期：2010年第26卷第3期

页      面：206-210页

核心收录：

学科分类：081702[工学-化学工艺] 082903[工学-林产化学加工工程] 08[工学] 0817[工学-化学工程与技术] 0806[工学-冶金工程] 0829[工学-林业工程] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0802[工学-机械工程] 082201[工学-制浆造纸工程] 0822[工学-轻工技术与工程] 0801[工学-力学（可授工学、理学学位）] 0702[理学-物理学] 

主　　题：Metalorganic decomposition Bismuth titanate Ferroelectric materials 

摘      要：Au/Bi 3.54 Nd 0.46 Ti 3 O 12 /Bi 2 Ti 2 O 7 /Si structure has been fabricated with a preferentially （111）-orientated Bi 2 Ti 2 O 7 seeding layer as a ferroelectric gate of metal-ferroelectric-insulator field effect *** 3.54 Nd 0.46 Ti 3 O 12 and Bi 3.54 Nd 0.46 Ti 3 O 12 /Bi 2 Ti 2 O 7 films are both well-crystallized when annealed at 680℃ for 40 min,and have smooth,dense and crack-free *** width of memory window of the ferroelectric gate increases with increasing electric field applied to the Bi 3.54 Nd 0.46 Ti 3 O 12 thin *** width of memory window of Au/Bi 3.54 Nd 0.46 Ti 3 O 12 /Bi 2 Ti 2 O 7 /Si with seeding layer is relatively wider than that of Au/Bi 3.54 Nd 0.46 Ti 3 O 12 /Si at the same bias voltage,and the counterclockwise hysteresis curve of Au/Bi 3.54 Nd 0.46 Ti 3 O 12 /Bi 2 Ti 2 O 7 /Si is referred to as polarization type switching at different *** 2 Ti 2 O 7 seeding layer plays an important role in alleviating the element interdiffusion between Bi 3.54 Nd 0.46 Ti 3 O 12 and Si.