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Application of artificial neural network for switching loss modeling in power IGBTs

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Journal of Zhejiang University-Science C(Computers and Electronics) 2010年第6期11卷 435-443页

作者： Yan DENG Xiang-ning HE Jing ZHAO Yan XIONG Yan-qun SHEN Jian JIANG School of Electrical Engineering Zhejiang University Hangzhou 310027 China

The modeling of switching loss in semiconductor power devices is important in practice for the prediction and evaluation of thermal safety and system *** simulation-based behavioral models and data processing-based empirical models are difficult and have limited *** the artificial neural network(ANN) algorithm has often been used for modeling, it has never been used for modeling insulated gate bipolar transistor(IGBT) transient *** this paper, we attempt to use the ANN method for this purpose, using a customized switching loss test *** compare its performance with two conventional curve-fitting models and verify the results by *** model is generally superior in calculation speed, accuracy, and data requirement, and is also able to be extended to loss modeling for all kinds of semiconductor power devices.

关键词： Insulated gate bipolar transistor(IGBT) switching loss Modeling Artificial neural network(ANN)

Low working loss Si/4H-SiC heterojunction MOSFET with analysis of the gate-controlled tunneling effect

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Journal of Electronic Science and Technology 2023年第4期21卷 35-47页

作者： Hang Chen You-Run Zhang State Key Laboratory of Electronic Thin Films and Integrated Devices School of Integrated Circuit Science and EngineeringUniversity of Electronic Science and Technology of ChinaChengdu610054China

A silicon (Si)/silicon carbide (4H-SiC) heterojunction double-trench metal-oxide-semiconductor field effect transistor (MOSFET) (HDT-MOS) with the gate-controlled tunneling effect is proposed for the first time based on simulations. In this structure, the channel regions are made of Si to take advantage of its high channel mobility and carrier density. The voltage-withstanding region is made of 4H-SiC so that HDT-MOS has a high breakdown voltage (BV) similar to pure 4H-SiC double-trench MOSFETs (DT-MOSs). The gate-controlled tunneling effect indicates that the gate voltage (V_(G)) has a remarkable influence on the tunneling current of the heterojunction. The accumulation layer formed with positive VG can reduce the width of the Si/SiC heterointerface barrier, similar to the heavily doped region in an Ohmic contact. This narrower barrier is easier for electrons to tunnel through, resulting in a lower heterointerface resistance. Thus, with similar BV (approximately 1770 V), the specific on-state resistance (R_(ON-SP)) of HDT-MOS is reduced by 0.77 mΩ·cm^(2) compared with that of DT-MOS. The gate-to-drain charge (Q_(GD)) and switching loss of HDT-MOS are 52.14% and 22.59% lower than those of DT-MOS, respectively, due to the lower gate platform voltage (V_(GP)) and the corresponding smaller variation (ΔV_(GP)). The figure of merit (Q_(GD)×R_(ON-SP)) of HDT-MOS decreases by 61.25%. Moreover, the heterointerface charges can reduce RON-SP of HDT-MOS due to trap-assisted tunneling while the heterointerface traps show the opposite effect. Therefore, the HDT-MOS structure can significantly reduce the working loss of SiC MOSFET, leading to a lower temperature rise when the devices are applied in the system.

关键词： Heterojunction On-state resistance Silicon carbide(4H-SiC)trench metal-oxide-semiconductor field effect transistors(MOSFETs) switching loss

IC Pattern Based Power Factor Maximization Model for Improved Power Stabilization

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Intelligent Automation & Soft Computing 2023年第4期36卷 401-414页

作者： N.Hariharan Y.Sukhi N.Kalaiarasi R.M.K.College of Engineering and Technology Thiruvallur601206India R.M.K.Engineering College Thiruvallur601206India

The voltageﬂuctuation in electric circuits has been identiﬁed as key issue in different electric *** the usage of electricity growing in rapid way,there exist higherﬂuctuations in powerﬂ*** maintain theﬂow or stabi-lity of power in any electric circuit,there are many circuit models are discussed in ***,they suffer to maintain the output voltage and not capable of maintaining power *** improve the performance in power stabilization,an efﬁcient IC pattern based power factor maximization model(ICPFMM)in this *** model is focused on improving the power stability with the use of IC(Inductor and Conductor)towards identifying most efﬁcient circuit for the current duty cycle according to the input voltage,voltage in capacitor and output voltage *** model with boost converter diverts the incoming voltage through number of conductors and *** triggering speciﬁc inductor,a speciﬁc capacitor gets charged and a particular circuit gets *** model maintains num-ber of IC(Inductor and Conductor)patterns through which the powerﬂow *** to that,the pattern available,the mofset controls the level of power to be regulated through any *** the pattern,the model computes the Cir-cuits switching loss and Circuits Conduction loss for various ***-ing to the input voltage,the model estimates Circuit Power Stabilization Support(CPSS)according to the voltage available in any capacitor and input *** the value of CPSS,the model trigger optimal number of circuits to maintain voltage *** this approach,more than one circuit has been triggered to maintain output voltage and to get *** proposed model not only main-tains power stability but also reduces the wastage in voltage which is not *** proposed model improves the performance in voltage stability with less switching loss.

关键词： Soft computing DC-DC converters boost rectiﬁers power stabilization conduction loss switching loss intelligent automation

A 3D SiC MOSFET with poly-silicon/SiC heterojunction diode

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Chinese Physics B 2022年第1期31卷 669-674页

作者：冉胜龙黄智勇胡盛东杨晗江洁周读 Chongqing Engineering Laboratory of High Performance Integrated Circuits School of Microelectronics and Communication EngineeringChongqing UniversityChongqing 400044China

A three-dimensional(3D)silicon-carbide(SiC)trench metal-oxide-semiconductor field-effect transistor(MOSFET)with a heterojunction diode(HJD-TMOS)is proposed and studied in this *** SiC MOSFET is characterized by an HJD which is partially embedded on one side of the *** the device is in the turn-on state,the body parasitic diode can be effectively controlled by the embedded HJD,the switching loss thus decreases for the ***,a highly-doped P+layer is encircled the gate oxide on the same side as the HJD and under the gate oxide,which is used to lighten the electric field concentration and improve the reliability of gate oxide *** mechanism for the HJD-TMOS is *** with the conventional device with the same level of on-resistance,the breakdown voltage of the HJD-TMOS is improved by 23.4%,and the miller charge and the switching loss decrease by 43.2%and 48.6%,respectively.

关键词： heterojunction diode SiC MOSFET switching loss on-state resistance

3.3 kV 4H-SiC DMOSFET with a source-contacted dummy gate for high-frequency applications

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Journal of Semiconductors 2021年第6期42卷 41-47页

作者： Kyuhyun Cha Kwangsoo Kim Department of Electronic Engineering Sogang UniversitySeoul 04107Korea

In this paper,a 4 H-Si C DMOSFET with a source-contacted dummy gate(DG-MOSFET)is proposed and analyzed through Sentaurus TCAD and PSIM *** source-contacted MOS structure forms fewer depletion regions than the PN ***,the overlapping region between the gate and the drain can be significantly reduced while limiting RON *** a result,the DG-MOSFET offers an improved high-frequency figure of merit(HF-FOM)over the conventional DMOSFET(C-MOSFET)and central-implant MOSFET(CI-MOSFET).The HF-FOM(RON×QGD)of the DG-MOSFET was improved by59.2%and 22.2%compared with those of the C-MOSFET and CI-MOSFET,*** a double-pulse test,the DG-MOSFET could save total power losses of 53.4%and 5.51%,***,in a power circuit simulation,the switching power loss was reduced by 61.9%and 12.7%in a buck converter and 61%and 9.6%in a boost converter.

关键词： 4H-Si C MOSFET dummy-gate gate-drain charge switching loss

Comparison of Three SVPWM Strategies

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Journal of Electronic Science and Technology of China 2007年第3期5卷 283-287页

作者： Wei-Feng Zhang Yue-Hui Yu with the Department of Electronic Science and Technology Huazhong University of Science and Technology Wuhan 430074 China

Three space vector pulse width modulation （SVPWM） schemes, called 7-segment space vector modulation （SVM）, 5-segment SVM and 3-segment SVM are studied in this paper. The basic principle of SVPWM is presented. The switching sequence of different scheme is described. The modulation signals, DC bus voltage utilization, and output line voltage harmonic of these schemes are analyzed by the MATLAB software with different modulation index M and frequency modulation index N. The simulation results are analyzed and show that discontinuous modulating functions lead a reduction of switching actions. The DC bus voltage utilization of three schemes is almost the same. For all three SVM, the frequency modulation index N will affect the harmonic characteristic, and the modulation index M will affect DC bus voltage utilization and the harmonic content. The experiment is implemented by the DSP of TMS320F2812. The results validate three algorithms and the simulation.

关键词： DC bus voltage utilization harmonic switching loss switching sequence space vector pulse width modulation.

Event-Triggered Model Predictive Control of Three-phase Grid-connected Inverter with Operation State Consideration

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Event-Triggered Model Predictive Control of Three-phase Grid...

A novel DC-AC Single Phase Resonant Inverter using soft switching boost converter

第32届中国控制与决策会议

作者： Shouyu Zhu Jingjing Huang Benfei Wang Yuangang Sun Xiangqian Tong School of Electrical Engineering Xi’an University of Technology School of Electronic and Information Engineering Xi’an Jiaotong University School of Intelligent Systems Engineering Sun Yat-sen University

An event-triggered Model Predictive Control（ET-MPC） method is proposed for three-phase grid-connected inverter. In proposed method, MPC will be triggered only when the state error in inverter exceeds a preset threshold;otherwise, the control actions and switching behaviors will be the same as previous period. Therefore, the proposed method has the advantages of less computational burden and switching actions compared with conventional one. Besides, the switching and conduction losses of switching devices are decreased and the system efficiency is improved. The simulation model of proposed ET-MPC scheme is built in MATLAB/SIMULINK and compared with traditional MPC scheme. The results show the effectiveness and superiority of proposed ET-MPC method.

关键词： Event-triggered(ET) model predictive control(MPC) switching loss

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A novel DC-AC Single Phase Resonant Inverter using soft swit...