A 3D SiC MOSFET with poly-silicon/SiC heterojunction diode

作     者：Sheng-Long Ran Zhi-Yong Huang Sheng-Dong Hu Han Yang Jie Jiang Du Zhou 冉胜龙;黄智勇;胡盛东;杨晗;江洁;周读

作者机构：Chongqing Engineering Laboratory of High Performance Integrated CircuitsSchool of Microelectronics and Communication EngineeringChongqing UniversityChongqing 400044China 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2022年第31卷第1期

页      面：669-674页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：the Natural Science Foundation Project of Chongqing Science and Technology Commission,China(Grant No.cstc2020jcyj-msxmX0243) the Fundamental Research Funds for the Central Universities,China(Grant No.2020CDJ-LHZZ-024) the Chongqing Technology Innovation and Application Development Key Project,China(Grant No.cstc2019jscx-zdztzxX0051) 

主　　题：heterojunction diode SiC MOSFET switching loss on-state resistance 

摘      要：A three-dimensional(3D)silicon-carbide(SiC)trench metal-oxide-semiconductor field-effect transistor(MOSFET)with a heterojunction diode(HJD-TMOS)is proposed and studied in this *** SiC MOSFET is characterized by an HJD which is partially embedded on one side of the *** the device is in the turn-on state,the body parasitic diode can be effectively controlled by the embedded HJD,the switching loss thus decreases for the ***,a highly-doped P+layer is encircled the gate oxide on the same side as the HJD and under the gate oxide,which is used to lighten the electric field concentration and improve the reliability of gate oxide *** mechanism for the HJD-TMOS is *** with the conventional device with the same level of on-resistance,the breakdown voltage of the HJD-TMOS is improved by 23.4%,and the miller charge and the switching loss decrease by 43.2%and 48.6%,respectively.