检索结果-南通市图书馆

Beam steering of external cavity diode laser by an intracavity electro-optic ceramic deflector

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Chinese Optics Letters 2011年第8期9卷 62-65页

作者：高敏叶青董作人卞正兰方祖捷蔡海文瞿荣辉 Shanghai Key Laboratory of All Solid-State Laser and Applied Techniques Shanghai Institute of Optics and Fine MechanicsChinese Academy of Sciences Graduate University of Chinese Academy of Sciences

A novel beam-steering external cavity diode laser using an intracavity lead lanthanum zirconate titanate （PLZT） electro-optic ceramic deflector is proposed and demonstrated experimentally. The laser consists of a semiconductor laser with single mode fiber coupled output, polarization controller, PLZT electro-optic ceramic deflector, and output concave mirror. By applying proper driven electrical signals on the PLZT electro-optic deflector, the beam deflection angle achieves 5.8 mrad at 1 000 V. A high-speed beam-steering property with less than 120-ns switching time is also observed. Moreover, a good beam quality with

关键词： Ceramic materials Electric properties Gaussian beams Mirrors Polarization semiconductor diodes Single mode fibers Solid state lasers

Stable, efficient diode-pumped femtosecond Yb:KGW laser through optimization of energy density on SESAM

在线全文

学校读者我要写书评

暂无评论

Chinese Optics Letters 2011年第7期9卷 62-64页

作者：李进峰梁晓燕何晋平林华 Shanghai Institute of Optics and Fine Mechanics Chinese Academy of Sciences

An efficient high-power diode-pumped femtosecond Yb：KGW laser is repored. Through optimization of energy density by semiconductor saturable absorber mirror, output power achieved 2.4 W with pulse duration of 350 fs and repetition rate of 53 MHz at a pump power of 12.5 W, corresponding to an optical-to-optical efficiency of 19.2%. We believe that it is the highest optical-to-optical efficiency for single-diode-numoed bulk Yb：KGW femtosecond lasers to date.

关键词： diodes Optical pumping Optimization Pulse repetition rate semiconductor diodes semiconductor lasers Ytterbium

Stable Narrow Linewidth 689 nm Diode Laser for the Second Stage Cooling and Trapping of Strontium Atoms

在线全文

学校读者我要写书评

暂无评论

Chinese Physics Letters 2010年第7期27卷 126-128页

作者：李烨林弋戈赵阳王强王少凯杨涛曹建平李天初方占军臧二军 Division of Electricity and Quantum Metrology National Institute of Metrology Beijing 100013 Department of Precision Instruments and Mechanology Tsinghua University Beijing 100084 Department of optical Engineering Beijing Institute of Technology Beijing 100081

We report stable narrow linewidth laser systems based on self-developed Littman configuration external cavity diode lasers （ECDLs）. The frequency of the ECDL is stabilized to a high fineness ultralow-expansion glass reference cavity with the Pound-Drever-Hall technique. By heterodyne beating of two identical systems, we conclude that the linewidth 4.3× 10^-14 at an averaging measurement time. of each ECDL is reduced to lower than 150 Hz and its frequency stability reaches time of 1 s, the averaged long-term frequency drift is less than 0.2 Hz/s over 30 h

关键词： LASERS -- Industrial applications semiconductor diodes STRONTIUM STABILITY (Mechanics) GLASS SPECTRUM analysis

High-Voltage AlGaN/GaN-Based Lateral Schottky Barrier diodes

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Chinese Physics Letters 2014年第6期31卷 237-240页

作者：康贺王权肖红领王翠梅姜丽娟冯舂陈竑殷海波王晓亮王占国侯洵 Key Lab of semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 Beijing Key Laboratory of Low-Dimensional semiconductor Materials and Devices Beijing 100083 ISCAS-XJTU Joint Laboratory of Functional Materials and Devices for Informatics Beijing 100083

Lateral Schottky barrier diodes （SBDs） on A1GaN/GaN heterojunctions are fabricated and studied. The characteristics of the fabricated SBDs with different Schottky contact diameters and different Schottky-Ohmic contact spacings are investigated. The breakdown voltage can be increased by either increasing the Schottky-Ohmie con- tact spacing or increasing the Schottky contact diameter. However, the specific on-resistance is increased at the same time. A high breakdown voltage of 1400 V and low reverse leakage current below 20nA are achieved by the device with a Schottky contact diameter of 100 μm and a contact spacing of 40 μm, yielding a high V^2BR/ RoN,sp value of 194 ***^-2.

关键词： semiconductor doping semiconductor diodes DOPING agents (Chemistry) SCHOTTKY-barrier diodes PHYSICAL & theoretical chemistry

Growth and Application of Chalcogenides of Lead and Related Compounds

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Rare Metals 1992年第1期11卷 27-33页

作者：王海龙朱筱春张位在曹根娣陈鹤明沈玉华 Shanghai Institute of Optics and Fine Mechanics Academia Sinica P. O. Box 800-216 Shanghai China 201800

Large grain, low-dislocation, high-quality single crystals of various Pb-salt compounds have been grown reproducibly by the Horizontal Unseeded Vapor Growth (HUVG) technique. The Tunable Diode Lasers with better performance have been made with such crystals. The annealing feature, dislocations and diffusion in the crystals have also been investigated.

关键词： Crystals Diffusion Crystals Dislocations Lasers, semiconductor Semiconducting Lead Compounds Applications semiconductor diodes

Low threshold voltage light-emitting diode in silicon-based standard CMOS technology

在线全文

学校读者我要写书评

暂无评论

Chinese Optics Letters 2011年第8期9卷 75-78页

作者：董赞王伟黄北举张旭关宁陈弘达 State Key Laboratory on Integrated Optoelectronics Institute of SemiconductorsChinese Academy of Sciences

Low-voltage silicon （Si）-based light-emitting diode （LED） is designed based on the former research of LED in Si-based standard complementary metal oxide semiconductor （CMOS） technology. The low-voltage LED is designed under the research of cross-finger structure LEDs and sophisticated structure enhanced LEDs for high efficiency and stable light source of monolithic chip integration. The device size of low-voltage LED is 45.85x38.4 （#m）, threshold voltage is 2.2 V in common condition, and temperature is 27 ~C. The external quantum efficiency is about 10-6 at stable operating state of 5 V and 177 mA.

关键词： CMOS integrated circuits Light emission Light sources Metallic compounds MOS devices Quantum theory Semiconducting silicon Semiconducting silicon compounds semiconductor diodes Threshold voltage

Characteristics of a GaN-based Gunn diode for THz signal generation

在线全文

学校读者我要写书评

暂无评论

Journal of semiconductors 2012年第8期33卷 37-43页

作者： R K Parida N C Agrawala G N Dash A K Panda ITER Siksha‘O'Anusandhan University Rengali College Sambalpur University National Institute of Science&Technology

A generalized large-signal computer simulation program for a Gunn oscillator has been developed. The properties of a Gunn diode oscillator based on the widely explored GaN, are investigated using the developed program. The results show some interesting properties in GaN Gunn diodes which are not seen in GaAs and InP diodes. An output power of 1400 kW/cm^2 is achieved from the GaN Gunn diode, as compared to 4.9 kW/cm^2 from a GaAs diode.

关键词： Gunn devices semiconductor diodes semiconductor materials power GaN

Parallel optical coherence tomography using a CCD camera

在线全文

学校读者我要写书评

暂无评论

Chinese Optics Letters 2004年第8期2卷 475-476页

作者：屈军乐 Ravi S.Jonnal Donald T.Miller Institute of Optoelectronics Shenzhen University Shenzhen 518060 School of Optometry Indiana University Bloomington IN 47405 USA School of Optometry Indiana University Bloomington IN 47405 USA School of Optometry Indiana University Bloomington IN 47405 USAarallel optical coherence tomography is demonstrated using a 12-bit scientific-grade charge-coupled device array. A superluminescent diode in combination with a free-space Michelson interferometer was employed to achieve 10-μm axial resolution and 1.1-μm transverse resolution on a 902×575 /μm2 field of view. We imaged a test mirror and bovine retinal tissue using a four-step phase shift method.

Parallel optical coherence tomography is demonstrated using a 12-bit scientific-grade charge-coupled device array. A superluminescent diode in combination with a free-space Michelson interferometer was employed to achieve 10-μm axial resolution and 1.1-μm transverse resolution on a 902×575 /μm2 field of view. We imaged a test mirror and bovine retinal tissue using a four-step phase shift method.

关键词： Cameras Charge coupled devices Interferometers Phase shift semiconductor diodes

Graded tensile-strained bulk InGaAs/InP superluminescent diode with very wide emission spectrum

在线全文

学校读者我要写书评

暂无评论

Chinese Optics Letters 2004年第6期2卷 359-361页

作者：王书荣朱洪亮刘志宏张瑞英丁颖赵玲娟周帆边静王鲁峰王圩 Center of Optoelectronics Research & Development Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 Institute of Solar Energy Yunnan Normal University Kunming 650092 Center of Optoelectronics Research & Development Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 Center of Optoelectronics Research & Development Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 kind of novel broad-band superluminescent diodes (SLDs) using graded tensile-strained bulk InGaAs is developed. The graded tensile-strained bulk InGaAs is obtained by changing only group-Ⅲtrimethyl-gallium source flow during low-pressure metal organic vapor-phase epitaxy. At the injection current of 200 mA the fabricated SLDs with such structure demonstrate full-width at half-maximum spectral width of 106 nm and the output light power of 13.6 mW respectively.

A kind of novel broad-band superluminescent diodes (SLDs) using graded tensile-strained bulk InGaAs is developed. The graded tensile-strained bulk InGaAs is obtained by changing only group-Ⅲ trimethyl-gallium source flow during low-pressure metal organic vapor-phase epitaxy. At the injection current of 200 mA, the fabricated SLDs with such structure demonstrate full-width at half-maximum spectral width of 106 nm and the output light power of 13.6 mW, respectively.

关键词： Emission spectroscopy Light sources Metallorganic vapor phase epitaxy Semiconducting indium gallium arsenide semiconductor diodes