High-Voltage AlGaN/GaN-Based Lateral Schottky Barrier Diodes

作     者：康贺 王权 肖红领 王翠梅 姜丽娟 冯舂 陈竑 殷海波 王晓亮 王占国 侯洵 

作者机构：Key Lab of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 Beijing Key Laboratory of Low-Dimensional Semiconductor Materials and Devices Beijing 100083 ISCAS-XJTU Joint Laboratory of Functional Materials and Devices for Informatics Beijing 100083 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2014年第31卷第6期

页      面：237-240页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：the National Science and Technology Major Project 国家863计划 国家973计划 国家自然科学基金 中国科学院知识创新工程项目 

主　　题：SEMICONDUCTOR doping SEMICONDUCTOR diodes DOPING agents (Chemistry) SCHOTTKY-barrier diodes PHYSICAL & theoretical chemistry 

摘      要：Lateral Schottky barrier diodes （SBDs） on A1GaN/GaN heterojunctions are fabricated and studied. The characteristics of the fabricated SBDs with different Schottky contact diameters and different Schottky-Ohmic contact spacings are investigated. The breakdown voltage can be increased by either increasing the Schottky-Ohmie con- tact spacing or increasing the Schottky contact diameter. However, the specific on-resistance is increased at the same time. A high breakdown voltage of 1400 V and low reverse leakage current below 20nA are achieved by the device with a Schottky contact diameter of 100 μm and a contact spacing of 40 μm, yielding a high V^2BR/ RoN,sp value of 194 ***^-2.