Dosimetry Methods of Fast Neutron Using the Semiconductor Diodes

作     者：H. Zaki Dizaji T. Kakavand F. Abbasi Davani 

作者机构：Department of Physics Faculty of Science Zanffan University Zanjan Iran Department of Physics Faculty of Science Imam Hossein Comprehensive University Tehran Iran Department of Physics Faculty of Science Imam Khomeini international University Qazvin Iran Department of Radiation Application Shahid Beheshti University Tehran Iran 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2014年第31卷第1期

页      面：61-64页

核心收录：

学科分类：082704[工学-辐射防护及环境保护] 08[工学] 0827[工学-核科学与技术] 

主　　题：SEMICONDUCTOR detectors PARTICLE detectors PIN diodes SEMICONDUCTOR diodes NUCLEAR counters SILICON detectors 

摘      要：Semiconductor detectors based on a silicon pin diode are frequently used in the detection of different nuclear radiations. For the detection and dosimetry of fast neutrons, these silicon detectors are coupled with a fast neutron converter. Incident neutrons interact with the converter and produce charged particles that can deposit their energy in the detectors and produce a signal. In this study, three methods are introduced for fast neutron dosimetry by using the silicon detectors, which are： recoil proton spectroscopy, similarity of detector response function with conversion function, and a discriminator layer. Monte Carlo simulation is used to calculate the response of dosimetry systems based on these methods. In the different doses of an 241Am-Be neutron source, dosimetry responses are evaluated. The error values of measured data for dosimetry by these methods are in the range of 15-25%. We find fairly good agreement in the 241Am-Be neutron sources.