Graded tensile-strained bulk InGaAs/InP superluminescent diode with very wide emission spectrum

作     者：王书荣 朱洪亮 刘志宏 张瑞英 丁颖 赵玲娟 周帆 边静 王鲁峰 王圩 

作者机构：Center of Optoelectronics Research & Development Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 Institute of Solar Energy Yunnan Normal University Kunming 650092 Center of Optoelectronics Research & Development Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 Center of Optoelectronics Research & Development Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 kind of novel broad-band superluminescent diodes (SLDs) using graded tensile-strained bulk InGaAs is developed. The graded tensile-strained bulk InGaAs is obtained by changing only group-Ⅲtrimethyl-gallium source flow during low-pressure metal organic vapor-phase epitaxy. At the injection current of 200 mA the fabricated SLDs with such structure demonstrate full-width at half-maximum spectral width of 106 nm and the output light power of 13.6 mW respectively. 

出 版 物：《Chinese Optics Letters》 (中国光学快报（英文版）)

年 卷 期：2004年第2卷第6期

页      面：359-361页

核心收录：

学科分类：070207[理学-光学] 07[理学] 08[工学] 0803[工学-光学工程] 0702[理学-物理学] 

基　　金：This work is financially supported by the National Natural Science Foundation of China (No. 90101023) the National "973" Project of China (No. G20000683-1) 

主　　题：Emission spectroscopy Light sources Metallorganic vapor phase epitaxy Semiconducting indium gallium arsenide Semiconductor diodes 

摘      要：A kind of novel broad-band superluminescent diodes (SLDs) using graded tensile-strained bulk InGaAs is developed. The graded tensile-strained bulk InGaAs is obtained by changing only group-Ⅲ trimethyl-gallium source flow during low-pressure metal organic vapor-phase epitaxy. At the injection current of 200 mA, the fabricated SLDs with such structure demonstrate full-width at half-maximum spectral width of 106 nm and the output light power of 13.6 mW, respectively.