检索结果-南通市图书馆

High-performance multilayer WSe2 field-effect transistors with carrier type control

在线全文

学校读者我要写书评

暂无评论

Nano Research 2018年第2期11卷 722-730页

作者： Pushpa Raj Pudasaini Akinola Oyedele Cheng Zhang Michael G. Stanford Nicholas Cross Anthony T. Wong Anna N. Hoffman Kai Xiao Gerd Duscher David G. Mandrus Thomas Z. Ward Philip D. Rack Department of Materials Science and Engineering University of Tennessee Knoxville USA Center for Nanophase Materials Sciences Oak Ridge National Laboratory Oak Ridge USA Bredesen Center for Interdisciplinary Research and Graduate Education University of Tennessee Knoxville USA Materials Science and Technology Division Oak Ridge National Laboratory Oak Ridge USA

In this stud high-performance multilayer WSe2 field-effect transistor （FET） devices with carrier type control are demonstrated via thickness modulation and a remote oxygen plasma surface treatment. Carrier type control in multilayer WSe2 FET devices with Cr/Au contacts is initially demonstrated by modulating the WSe2 thickness. The carrier type evolves with increasing WSe2 channel thickness, being p-type, ambipolar, and n-type at thicknesses 〈 3, - 4, and 〉 5 nm, respectively. The thickness-dependent carrier type is attributed to changes in the bandgap of WSe2 as a function of the thickness and the carrier band offsets relative to the metal contacts. Furthermore, we present a strong hole carrier doping effect via remote oxygen plasma treatment. It non-degenerately converts n-type characteristics into p-type and enhances field-effect hole mobility by three orders of magnitude. This work demonstrates progress towards the realization of high-performance multilayer WSe2 FETs with carrier type control, potentially extendable to other transition metal dichalcogenides, for future electronic and oDtoelectronic alpplications.

关键词： transition metaldichalcogenide field-effect transistors carrier control plasma treatment carrier mobility

effect of spin on the instability of THz plasma waves in field-effect transistors under non-ideal boundary conditions

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Plasma Science and Technology 2023年第12期25卷 24-30页

作者：张丽萍李佳妮冯江旭苏俊燕 School of Sciences Lanzhou University of TechnologyLanzhou 730050People’s Republic of China

Terahertz(THz) radiation can be generated due to the instability of THz plasma waves in field-effect transistors(FETs). In this work, we discuss the instability of THz plasma waves in the channel of FETs with spin and quantum effects under non-ideal boundary conditions. We obtain a linear dispersion relation by using the hydrodynamic equation, Maxwell equation and spin equation. The influence of source capacitance, drain capacitance, spin effects, quantum effects and channel width on the instability of THz plasma waves under the non-ideal boundary conditions is investigated in great detail. The results of numerical simulation show that the THz plasma wave is unstable when the drain capacitance is smaller than the source capacitance;the oscillation frequency with asymmetric boundary conditions is smaller than that under non-ideal boundary conditions;the instability gain of THz plasma waves becomes lower under non-ideal boundary conditions. This finding provides a new idea for finding efficient THz radiation sources and opens up a new mechanism for the development of THz technology.

关键词： the instability of THz plasma waves spin effects non-ideal boundary conditions quantum effects field-effect transistors

Contact optimisation strategy for wafer-scale field-effect transistors based on two-dimensional semiconductors

在线全文

学校读者我要写书评

暂无评论

Journal of Materials Science & Technology 2023年第2期133卷 230-237页

作者： Ling Tong Xiaojiao Guo Zhangfeng Shen Lihui Zhou Jingyi Ma Xinyu Chen Honglei Chen Yin Xia Chuming Sheng Saifei Gou Die Wang Xinyu Wang Xiangqi Dong Yuxuan Zhu Xinzhi Zhang David Wei Zhang Sheng Dai Xi Li Peng Zhou Yangang Wang Wenzhong Bao State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghai 200433China College of Biological Chemical Science and EngineeringJiaxing UniversityJiaxing 314001China Key Laboratory for Advanced Materials and Feringa Nobel Prize Scientist Joint Research Center Institute of Fine ChemicalsSchool of Chemistry&Molecular EngineeringEast China University of Science and TechnologyShanghai 200237China State Key Laboratory of Surface Physics and Department of Physics Fudan UniversityShanghai 200433China

Two-dimensional(2D)semiconductors can be utilized to continually miniaturize nanoscale electronic ***,achieving a practical solution for satisfying electrical contact with 2D semiconductors remains *** this study,we developed a novel contact structure with transferred multilayer(t-ML)MoS 2 by integrating both edge and top *** in-situ plasma treatment for the edge of the MoS 2 channel and successive metal deposition,we achieved 16 times lower contact resistivity(22.8 kΩμm)than that of the top contacted *** thickness-dependent electrical measurement indicates that edge contact is highly effective with thick MoS 2 due to the alleviated current-crowding effect re-sulting from the small contact *** temperature-dependent transport measurement further confirms the effective minimization of the influence from the Schottky barrier and tunnelling ***,the simplified resistor network model and energy-band diagram were proposed to understand the carrier transport *** work provides a practical strategy for achieving excellent electrical contact between bulk metals and 2D semiconductors,paving the way for future large-scale 2D electronic devices.

关键词： Edge contact 2D materials field-effect transistors Schottky barrier Contact resistance

Reversible and controllable threshold voltage modulation for n-channel MoS2 and p-channel MoTe_(2 )field-effect transistors via multiple counter doping with ODTS/poly-L-lysine charge enhancers

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Nano Research 2021年第9期14卷 3214-3227页

作者： Seung Gi Seo Jinheon Jeong Seung Yeob Kim Ajit Kumar Sung Hun Jin Department of Electronic Engineering Incheon National UniversityAcademy-ro 119Yeongsu-guIncheon 22012Republic of Korea

Confronted by the inherent physical limitations in scaling down Si technology,transition metal dichalcogenides(TMDCs)as alternatives are being tremendously researched and paid attention ***,mature counter doping technology for TMDCs is still elusive,and thus,a controllable and reversible charge enhancer is adopted for acceptor(or donor)-like doping via octadecyltrichlorosilane(ODTS)(or poly-L-lysine(PLL))***,multiple counter doping for TMDC field-effect transistors(FETs),combined with a threshold voltage(V;h)freezing scheme,renders the V_(th) modulation controllable,with negligible degradation and decent sustainability of FETs even after each treatment of a representative charge *** parallel,the counter doping mechanism is systematically investigated via photoluminescence spectroscopy,X-ray photoelectron spectroscopy,atomic force microscopy(AFM),surface energy characterization,and measurement of optoelectronic properties under illumination with light of various *** impressively,complementary inverters,composed of type-converted molybdenum ditelluride(MoTe_(2)>FETs and hetero-TMDC FETs in enhancement mode,are demonstrated via respective ODTS/PLL ***,driving backplane application for micro-light-emitting diode(p-LED)displays and physical validation of a corresponding counter doping scheme even for flexible polyethylene terephthalate(PET)substrates could be leveraged to relieve daunting challenges in the application of nanoscale Si-based three-dimensional(3D)stacked systems,with potential adoption of ultralow power and monolithic optical interconnection technology.

关键词： transition metal dichalcogenides(TMDCs) counter doping charge enhancer field-effect transistors micro-light-emitting diode(m-LED)

Radio-Frequency Performance of Epitaxial Graphene field-effect transistors on Sapphire Substrates

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Chinese Physics Letters 2014年第7期31卷 210-213页

作者：刘庆彬蔚翠李佳宋旭波何泽召芦伟立顾国栋王元刚冯志红 National Key Laboratory of ASIC Hebei Semiconductor Research Institute Shijiazhuang 050051

We report dc and the first-ever measured small signal rf performance of epitaxial graphene field-effect transistors （GFETs）, where the epitaxial graphene is grown by chemical vapor deposition （CVD） on a 2-inch c-plane sapphire substrate. Our epitaxial graphene material has a good flatness and uniformity due to the low carbon concentration during the graphene growth. With a gate length Lg = 100 nm, the maximum drain source current Ids and peak transconductance gm reach 0.92 A/mm and 0.143 S/mm, respectively, which are the highest results reported for GFETs directly grown on sapphire. The extrinsic cutoff frequency （fT） and maximum oscillation frequency （fmax） of the device are 12 GHz and 9.5 GHz, and up to 32 GHz and 21.5 GHz after de-embedding, respectively. Our work proves that epitaxial graphene on sapphire substrates is a promising candidate for rf electronics.

关键词： field-effect transistors GRAPHENE RADIO frequency EPITAXY PERFORMANCE evaluation

Extraction of Channel Length Independent Series Resistance for Deeply Scaled Metal-Oxide-Semiconductor field-effect transistors

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Chinese Physics Letters 2014年第9期31卷 141-143页

作者：马丽娟纪小丽陈原聪夏好广朱晨昕郭强闫锋 School of Electronic Science and Engineering Nanjing University Nanjing 210093 Wuhan Xinxin Semiconductor Manufacturing Corporation Wuhan 430205

The recently developed four Rsd extraction methods from a single device, involving the constant-mobility method,the direct Id Vgs method, the conductance method and the Y-tunctlon metnoa, are evaluatea on 32 nm n-channel metal-oxide-semiconductor field-effect transistors （nMOSFETs）. It is found that Rsd achieved from the constant- mobility method exhibits the channel length independent characteristics. The L-dependent Rsd extracted from the other three methods is proven to be associated with the gate-voltage-induced mobility degradation in the extraction procedures. Based on L-dependent behaviors of Rsd, a new method is proposed for accurate series resistance extraction on deeply scaled MOSFETs.

关键词： METAL oxide semiconductor field-effect transistors RESEARCH EXTRACTION techniques ADMITTANCE (Electricity) field-effect transistors METAL oxide semiconductors

SnSe field-effect transistors with improved electrical properties

在线全文

学校读者我要写书评

暂无评论

Nano Research 2022年第2期15卷 1532-1537页

作者： Shuai Liu Yujia Chen Shengxue Yang Chengbao Jiang School of Materials Science and Engineering Beihang UniversityBeijing 100191China

Low-symmetry two-dimensional(2D)materials,with unique in-plane direction-dependent optical,electrical,and thermoelectric properties,have been intensively studied for their potential application values in advanced electronic and optoelectronic ***,since anisotropic 2D materials are highly sensitive to the environmental factors,researches on their high-performance field-effect transistors(FETs)are still ***,we report a high-performance SnSe FET based on a van der Waals(vdWs)heterostructure of SnSe encapsulated in hexagonal boron nitride(/7BN)together with graphene *** device exhibits a high on/off ratio exceeding 1 × 10^(9),and a carrier mobility of 118 cm^(2)·V^(-1)s^(-1).Our work highlights low-symmetry 2D SnSe holds potential to be used for designing excellent electronic devices.

关键词： few-layer SnSe anisotropy field-effect transistors van der Waals heterostructure hysteresis

High yield fabrication of semiconducting thin-film field-effect transistors based on chemically functionalized single-walled carbon nanotubes

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Science China Chemistry 2011年第9期54卷 1484-1490页

作者： ZHAO JianWen QIAN Jun SHEN YongQiang WANG XiaoHua SHI AiHua LEE ChunWei College of Chemistry and Chemical Engineering Jishou University Jishou 416000 China Printable Electronics Research Centre Suzhou Institute of Nanotech and Nano-bionics Chinese Academy of Sciences Suzhou 215123 China Key Laboratory of Photochemical Conversion and Optoelectronic Materials TIPC Chinese Academy of Sciences Beijing 100190 China School of Materials Science and Engineering Nanyang Technological University Singapore 637819 Singapore

Here we report a simple and scalable method to fabricate high performance thin-film field-effect transistors(FETs) with high yield based on chemically functionalized single-walled carbon nanotubes(SWNTs) by organic radical *** UV-Vis-NIR spectra,Raman spectra and electrical characterization demonstrated that metallic species in CoMoCat 65 and HiPco SWNTs could be effectively eliminated after reaction with some organic radical *** effects of the substrate properties on the electrical properties of FET devices were investigated,and the results showed that the electrical properties of FET devices fabricated on high hydrophobic substrates were better than those on low hydrophobic ***,it was found that FET devices based on 1,1'-azobis(cyanocyclohexane)(ACN)-modified CoMoCat 65 SWNTs exhibited more excellent electrical performance with effective mobility of ～11.8 cm2/Vs and on/off ratio of ～2×105 as compared with benzoyl peroxide(BPO)-modified CoMoCat 65 SWNTs and lauoryl peroxideand(LPO)-modified HiPco SWNTs,likely due to the introduction of the electron-withdrawing groups(CN group) on the SWNT *** method does not require nontrivial reaction conditions or complicated purification after reaction,therefore promising low-cost production of high-performance devices for macroelectronics.

关键词： single-walled carbon nanotubes field-effect transistors radicals effectively eliminated

Improved Performance of Phthalocyanine Derivative field-effect transistors by Inserting a Para-Quarterphenyl as the Inducing Layer

在线全文

学校读者我要写书评

暂无评论

Chinese Physics Letters 2014年第5期31卷 183-186页

作者：董妮吴晓明党焕芹刘冬月张强魏军印寿根 Institute of Material Physics Tianjin University of Technology Tianjin 300384 Key Laboratory of Display Material and Photoelectric Devices (Ministry of Education) Tianjin University of Technology Tianjin 300384 Singapore Institute of Manufacturing Technology 71 Nanyang Drive 638075 Singapore

We investigate the phthalocyanine derivative organic field-effect transistors （OFETs） using a novel para - quaterphenyl （p-4p） as the inducing layer. Compared to the devices without the p-4p inducing layer, the performances of p-type （copper phthalocyanine） and n-type （fluorinated copper phthaloeyanine） OFETs with optimized thickness of p-4p thin films are greatly enhanced. Both the field-effect mobility and the on/off ratio of the two-type devices are improved by one order of magnitude compared to those of the control devices. This re- markable improvement is attributed to the introduction of p-4p, which can form a highly oriented and continuous phthalocyanine derivative film with the molecular π - π stack direction parallel to the substrate.

关键词： field-effect transistors COPPER phthalocyanine PHOTONS ELECTRO-optical modulation WAVEGUIDES