Reversible and controllable threshold voltage modulation for n-channel MoS2 and p-channel MoTe_(2 )field-effect transistors via multiple counter doping with ODTS/poly-L-lysine charge enhancers

作     者：Seung Gi Seo Jinheon Jeong Seung Yeob Kim Ajit Kumar Sung Hun Jin Seung Gi Seo;Jinheon Jeong;Seung Yeob Kim;Ajit Kumar;Sung Hun Jin

作者机构：Department of Electronic EngineeringIncheon National UniversityAcademy-ro 119Yeongsu-guIncheon 22012Republic of Korea 

出 版 物：《Nano Research》 (纳米研究（英文版）)

年 卷 期：2021年第14卷第9期

页      面：3214-3227页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：supported by the Priority Research Centers Program through the National Research Foundation of Korea(NRF) funded by the Ministry of Education(No.NRF-2020R1A6A1A03041954) partly supported by(i)the Basic Science Research Program through the National Research Foundation of Korea(NRF) funded by the Ministry of Education(No.NRF-2019R1F1A1062767)and by(ii)the National Research Foundation of Korea(NRF) funded by the Ministry of Science,ICT and Future Planning(No.NRF-2021R1A2C1012593) 

主　　题：transition metal dichalcogenides(TMDCs) counter doping charge enhancer field-effect transistors micro-light-emitting diode(m-LED) 

摘      要：Confronted by the inherent physical limitations in scaling down Si technology,transition metal dichalcogenides(TMDCs)as alternatives are being tremendously researched and paid attention ***,mature counter doping technology for TMDCs is still elusive,and thus,a controllable and reversible charge enhancer is adopted for acceptor(or donor)-like doping via octadecyltrichlorosilane(ODTS)(or poly-L-lysine(PLL))***,multiple counter doping for TMDC field-effect transistors(FETs),combined with a threshold voltage(V;h)freezing scheme,renders the V_(th) modulation controllable,with negligible degradation and decent sustainability of FETs even after each treatment of a representative charge *** parallel,the counter doping mechanism is systematically investigated via photoluminescence spectroscopy,X-ray photoelectron spectroscopy,atomic force microscopy(AFM),surface energy characterization,and measurement of optoelectronic properties under illumination with light of various *** impressively,complementary inverters,composed of type-converted molybdenum ditelluride(MoTe_(2)FETs and hetero-TMDC FETs in enhancement mode,are demonstrated via respective ODTS/PLL ***,driving backplane application for micro-light-emitting diode(p-LED)displays and physical validation of a corresponding counter doping scheme even for flexible polyethylene terephthalate(PET)substrates could be leveraged to relieve daunting challenges in the application of nanoscale Si-based three-dimensional(3D)stacked systems,with potential adoption of ultralow power and monolithic optical interconnection technology.