High yield fabrication of semiconducting thin-film field-effect transistors based on chemically functionalized single-walled carbon nanotubes

作     者：ZHAO JianWen QIAN Jun SHEN YongQiang WANG XiaoHua SHI AiHua LEE ChunWei 

作者机构：College of Chemistry and Chemical Engineering Jishou University Jishou 416000 China Printable Electronics Research Centre Suzhou Institute of Nanotech and Nano-bionics Chinese Academy of Sciences Suzhou 215123 China Key Laboratory of Photochemical Conversion and Optoelectronic Materials TIPC Chinese Academy of Sciences Beijing 100190 China School of Materials Science and Engineering Nanyang Technological University Singapore 637819 Singapore 

出 版 物：《Science China Chemistry》 (中国科学（化学英文版）)

年 卷 期：2011年第54卷第9期

页      面：1484-1490页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0702[理学-物理学] 

基　　金：supported by the Scientific Research Fund of Hunan Provincial Education Department(09B084) the Opening Project of Key Laboratory of Photochemical Conversion and Optoelectronic Materials,TIPC, Chinese Academy of Sciences(PCOM201114) 

主　　题：single-walled carbon nanotubes field-effect transistors radicals effectively eliminated 

摘      要：Here we report a simple and scalable method to fabricate high performance thin-film field-effect transistors(FETs) with high yield based on chemically functionalized single-walled carbon nanotubes(SWNTs) by organic radical *** UV-Vis-NIR spectra,Raman spectra and electrical characterization demonstrated that metallic species in CoMoCat 65 and HiPco SWNTs could be effectively eliminated after reaction with some organic radical *** effects of the substrate properties on the electrical properties of FET devices were investigated,and the results showed that the electrical properties of FET devices fabricated on high hydrophobic substrates were better than those on low hydrophobic ***,it was found that FET devices based on 1,1 -azobis(cyanocyclohexane)(ACN)-modified CoMoCat 65 SWNTs exhibited more excellent electrical performance with effective mobility of ～11.8 cm2/Vs and on/off ratio of ～2×105 as compared with benzoyl peroxide(BPO)-modified CoMoCat 65 SWNTs and lauoryl peroxideand(LPO)-modified HiPco SWNTs,likely due to the introduction of the electron-withdrawing groups(CN group) on the SWNT *** method does not require nontrivial reaction conditions or complicated purification after reaction,therefore promising low-cost production of high-performance devices for macroelectronics.