Field-effect transistors based on two-dimensional materials for logic applications

作     者：王欣然 施毅 张荣 Wang Xin-Ran , Shi Yi , and Zhang Rong National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China

作者机构：National Laboratory of Microstructures and School of Electronic Science and EngineeringNanjing University 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2013年第22卷第9期

页      面：147-161页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0704[理学-天文学] 

基　　金：supported by the National Basic Research Program of China (Grant No. 2013CBA01600) the National Natural Science Foundation of China (Grant Nos. 61261160499 and 11274154) the National Science and Technology Major Project of the Ministry of Science and Technology of China (Grant No. 2011ZX02707) the Natural Science Foundation of Jiangsu Province, China (Grant No. BK2012302) the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20120091110028) 

主　　题：graphene MoS2 two-dimensional (2D) materials field-effect transistors 

摘      要：Field-effect transistors （FETs） for logic applications, graphene and MoS2, are discussed. These materials have based on two representative two-dimensional （2D） materials, drastically different properties and require different consider- ations. The unique band structure of graphene necessitates engineering of the Dirac point, including the opening of the bandgap, the doping and the interface, before the graphene can be used in logic applications. On the other hand, MoS2 is a semiconductor, and its electron transport depends heavily on the surface properties, the number of layers, and the carrier density. Finally, we discuss the prospects for the future developments in 2D material transistors.