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Field-effect at electrical contacts to two-dimensional materials

Nano Research 2021年第12期14卷 4894-4900页

作者： Yao Guo Yan Sun Alvin Tang Ching-Hua Wang Yanqing Zhao Mengmeng Bai Shuting Xu Zheqi Xu Tao Tang Sheng Wang Chenguang Qiu Kang Xu Xubiao Peng Junfeng Han Eric Pop Yang Chai School of Physics Beijing Institute of TechnologyBeijing100081China Department of Electrical Engineering and Stanford SystemX Alliance Stanford UniversityStanfordCA94305USA Advanced Manufacturing EDA Co. Ltd.Shanghai201204China Key Laboratory for the Physics and Chemistry of Nanodevices Department of ElectronicsPeking UniversityBeijing100871China Department of Applied Physics The Hong Kong Polytechnic UniversityHong KongChina

The inferior electrical contact to two-dimensional(2D)materials is a critical challenge for their application in post-silicon very large-scale integrated circuits.Electrical contacts were generally related to their resistive effect,quantified as contact resistance.With a systematic investigation,this work demonstrates a capacitive metal-insulator-semiconductor(MIS)Field-effect at the electrical contacts to 2D materials:The Field-effect depletes or accumulates charge carriers,redistributes the voltage potential,and gives rise to abnormal current saturation and nonlinearity.On one hand,the current saturation hinders the devices’driving ability,which can be eliminated with carefully engineered contact configurations.On the other hand,by introducing the nonlinearity to monolithic analog artificial neural network circuits,the circuits’perception ability can be significantly enhanced,as evidenced using a coronavirus disease 2019(COVID-19)critical illness prediction model.This work provides a comprehension of the Field-effect at the electrical contacts to 2D materials,which is fundamental to the design,simulation,and fabrication of electronics based on 2D materials.

关键词： Field-effect electrical contact two-dimensional materials nonlinearity in-memory-computing

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Monolayer organic Field-effect transistors

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Science China Chemistry 2019年第3期62卷 313-330页

作者： Jie Liu Lang Jiang Wenping Hu Yunqi Liu Daoben Zhu Beijing National Laboratory for Molecular Sciences Key Laboratory of Organic Solids Institute of Chemistry Chinese Academy of Sciences Tianjin Key Laboratory of Molecular Optoelectronic Sciences Department of Chemistry School of Science

Monolayer organic Field-effect transistors(OFETs) are attracting worldwide interest in device physics and novel applications due to their ultrathin active layer for two-dimensional charge transport. The monolayer films are generally prepared by thermal evaporation, the Langmuir technique or self-assembly process, etc., but their electrical performance is relatively lower than corresponding thick films. From 2011, the performance of monolayer OFETs has been boosted by using the monolayer molecular crystals(MMCs) as active channels, which opened up a new era for monolayer OFETs. In this review, recent progress of monolayer OFETs, including the preparation of monolayer films, their OFET performance and applications are summarized.Finally, perspectives of monolayer OFETs in the near future are also discussed.

关键词： monolayer films organic Field-effect transistors monolayer molecular crystals(MMCs) mobility

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A Field-effect approach to directly profiling the localized states in monolayer MoS2

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Science Bulletin 2019年第15期64卷 1049-1055页

作者： Hao Wu Yuan Liu Zeyu Deng Hung-Chieh Cheng Dehui Li Jian Guo Qiyuan He Sen Yang Mengning Ding Yun-Chiao Huang Chen Wang Yu Huang Xiangfeng Duan Department of Materials Science and Engineering University of CaliforniaLos AngelesCA90095USA Department of Chemistry and Biochemistry University of CaliforniaLos AngelesCA90095USA California NanoSystems Institute University of CaliforniaLos AngelesCA90095USA

A fundamental understanding of the charge transport mechanism in two-dimensional semiconductors(e.g., MoS2) is crucial for fully exploring their potential in electronic and optoelectronic devices. By using monolayer graphene as the barrier-free contact to MoS2, we show that the field-modulated conductivity can be used to probe the electronic structure of the localized states. A series of regularly distributed plateaus were observed in the gate-dependent transfer curves. Calculations based on the variable-range hopping theory indicate that such plateaus can be attributed to the discrete localized states near mobility edge. This method provides an effective approach to directly profiling the localized states in conduction channel with an ultrahigh resolution up to 1 meV.

关键词： Two-dimensional layered materials Field-effect transistor Localized states Electronic transport Conductivity plateau

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The design and synthesis of fused thiophenes and their applications in organic Field-effect transistors

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Science China Chemistry 2010年第4期53卷 779-791页

作者： LIU Ying, YU Gui & LIU YunQi Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China Beijing National Laboratory for Molecular Sciences Key Laboratory of Organic Solids Institute of Chemistry Chinese Academy of Sciences Beijing China

Fused thiophenes refer to oligothienoacenes in which several thiophenes are coupled together via twoor multi-positions and their derivatives. The synthesized organic semiconductors based on fused thiophenes exhibit excellent field effect properties due to their efficient intermolecular S…S interactions and π…π stacking. The performances of organic Field-effect transistors (OFETs) depend not only on the materials but also on the devices. Such factors which influence the device performances as device structures, fabrication technologies and interface engineering are extensively investigated based on the fused thiophenes. Searching for new organic semiconductors and improving the device fabrication technologies are two major issues in the development of OFETs.

关键词： fused thiophenes oligothienoacenes organic Field-effect transistors device performance

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Reversible chemical switches of functionalized nitrogen-doped graphene Field-effect transistors

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Chinese Chemical Letters 2020年第2期31卷 565-569页

作者： Rong Rong Song Liu Institute of Chemical Biology and Nanomedicine(ICBN) State Key Laboratory of Chemo/Biosensing and ChemometricsCollege of Chemistry and Chemical EngineeringHunan UniversityChangsha 410082China

Nitrogen doping is a promising way to modulate the electrical properties of graphene to realize graphene-based electronics and promise fascinating properties and applications.Herein,we report a method to noncovalently assembly titanium(Ⅳ) bis(ammoniumlactato) dihydroxide(Ti complex) on nitrogen-doped graphene to create a reliable hybrids which can be used as a reversible chemical induced switching.As the adsorption and desorption of Ti complex in sequential treatments,the conductance of the nitrogen-doped graphene transistors was finely modulated.Control experiments with pristine graphene clearly demonstrated the important effort of the nitrogen in this chemical sensor.Under optimized conditions,nitrogen-doped graphene transistors open up new ways to develop multifunctional devices with high sensitivity.

关键词： Field-effect transistors Nitrogen-doped graphene Doping effect Ti complex Reversible switch

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Field-effect transistor chemical sensors of single nanoribbon of copper phthalocyanine

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Science China Chemistry 2009年第6期52卷 751-754页

作者： YaJie Zhang WenPing Hu Key Laboratory of Organic Solids Institute of Chemistry Chinese Academy of Sciences Beijing 100190 China

Copper phthalocyanine (CuPc) nanoribbon Field-effect transistors were implemented as chemical sensors. They showed fast response and high reversibility in the detection of the tetrahydrofuran atmosphere at room temperature. The drain current of the Field-effect transistor sensor decreased from 6.7 to 0.2 nA when the transistor was measured under the tetrahydrofuran atmosphere. The sensor was self-refreshable in a few minutes. These results demonstrate that the organic single crystalline nanoribbon transistors could effectively act as chemical sensors.

关键词： CuPc nanoribbon Field-effect transistor THF sensor

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Optimization of ambipolar current and analog/RF performance for T-shaped tunnel Field-effect transistor with gate dielectric spacer

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Chinese Physics B 2019年第1期28卷 656-662页

作者：韩茹张海潮王党辉李翠 School of Computer Science and Engineering Northwestern Polytechnical University

A new T-shaped tunnel Field-effect transistor(TTFET) with gate dielectric spacer(GDS) structure is proposed in this paper. To further studied the effects of GDS structure on the TTFET, detailed device characteristics such as current-voltage relationships, energy band diagrams, band-to-band tunneling(BTBT) rate and the magnitude of the electric field are investigated by using TCAD simulation. It is found that compared with conventional TTFET and TTFET with gate-drain overlap(GDO) structure, GDS-TTFET not only has the minimum ambipolar current but also can suppress the ambipolar current under a more extensive bias range. Furthermore, the analog/RF performances of GDS-TTFET are also investigated in terms of transconductance, gate-source capacitance, gate-drain capacitance, cutoff frequency, and gain bandwidth production. By inserting a low-κ spacer layer between the gate electrode and the gate dielectric, the GDS structure can effectively reduce parasitic capacitances between the gate and the source/drain, which leads to better performance in term of cutoff frequency and gain bandwidth production. Finally, the thickness of the gate dielectric spacer is optimized for better ambipolar current suppression and improved analog/RF performance.

关键词： tunneling field effect transistor T-shaped tunnel Field-effect transistor gate dielectric spacer ambipolar current analog/RF performance

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Field-effect transistors with multiple channels constructed by carbon nanotubes

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Science China(Technological Sciences) 2005年第6期48卷 669-678页

作者： CHEN Changxin ZHANG Yafei National Key Laboratory of Nano/Micro Fabrication Technology Key Laboratory for Thin Film and Microfabrication of Ministry of Education Institute of Micro and Nano Science and Technology Shanghai Jiaotong University Shanghai 200030 China National Key Laboratory of Nano/Micro Fabrication Technology Key Laboratory for Thin Film and Microfabrication of Ministry of Education Institute of Micro and Nano Science and Technology Shanghai Jiaotong University Shanghai 200030 China

Single-wall carbon nanotubes (SWNTs) pre-decorated with functional molecules are directly aligned in the AC electric field, which makes SWNTs parallelly bridge the source and drain electrodes and act as the multiple conduction channels of the Field-effect transistor (FET). The method avoids the mutual tanglement of SWNTs and makes them align between the source and drain electrodes abreast and dispersedly. It is indicated that aligning SWNTs in the high-volatility solvents can decrease the contaminant around the electrodes and has a function to purify the raw SWNTs. The obtained multi-channel FET not only takes on a high transconductance, but also holds the good reliability and stability.

关键词： multi-channel, carbon nanotubes, Field-effect transistors, directed alignment, transconductance.

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Organic single crystals or crystalline micro/nanostructures: Preparation and Field-effect transistor applications

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Science China Chemistry 2010年第6期53卷 1225-1234页

作者： FU XiaoLong,WANG ChengLiang,LI RongJin,DONG HuanLi & HU WenPing Beijing National Laboratory for Molecular Sciences,Key Laboratory of Organic Solids,Institute of Chemistry,Chinese Academy of Sciences,Beijing 100190,China Beijing National Laboratory for Molecular Sciences Key Laboratory of Organic Solids Institute of Chemistry Chinese Academy of Sciences Beijing China

Organic single crystals hold great promise for the development of organic semiconductor materials,because they could reveal the intrinsic electronic properties of these materials,providing high-performance electronic devices and probing the structureproperty relationships.This article reviews the preparation methods for organic single crystals or crystalline micro/nanostructures,including vapor phase growth methods and solution-processed methods,and summarizes a few methods employed in the fabrication of Field-effect transistors along with dozens of examples concerning both small molecules and polymers with high Field-effect performance.

关键词： organic single crystal physical vapor transport (PVT) solution-processed technique Field-effect transistors (FETs) micro/nanostructures

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Modeling electric field of power metal-oxide-semiconductor Field-effect transistor with dielectric trench based on Schwarz–Christoffel transformation

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Chinese Physics B 2019年第5期28卷 366-373页

作者：汪志刚廖涛王亚南 School of Information Science and Technology Southwest Jiao Tong University

A power metal-oxide-semiconductor Field-effect transistor(MOSFET) with dielectric trench is investigated to enhance the reversed blocking capability. The dielectric trench with a low permittivity to reduce the electric field at reversed blocking state has been studied. To analyze the electric field, the drift region is segmented into four regions, where the conformal mapping method based on Schwarz–Christoffel transformation has been applied. According to the analysis, the improvement in the electric field for using the low permittivity trench is mainly due to the two electric field peaks generated in the drift region around this dielectric trench. The analytical results of the electric field and the potential models are in good agreement with the simulation results.

关键词： conformal mapping Schwarz–Christoffel transformation electric field trench metal-oxidesemiconductor Field-effect transistor (MOSFET) breakdown voltage

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