Field-effect transistors with multiple channels constructed by carbon nanotubes

作     者：CHEN Changxin ZHANG Yafei 

作者机构：National Key Laboratory of Nano/Micro Fabrication Technology Key Laboratory for Thin Film and Microfabrication of Ministry of Education Institute of Micro and Nano Science and Technology Shanghai Jiaotong University Shanghai 200030 China National Key Laboratory of Nano/Micro Fabrication Technology Key Laboratory for Thin Film and Microfabrication of Ministry of Education Institute of Micro and Nano Science and Technology Shanghai Jiaotong University Shanghai 200030 China 

出 版 物：《Science China(Technological Sciences)》 (中国科学（技术科学英文版）)

年 卷 期：2005年第48卷第6期

页      面：669-678页

核心收录：

学科分类：0810[工学-信息与通信工程] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0802[工学-机械工程] 0702[理学-物理学] 0812[工学-计算机科学与技术（可授工学、理学学位）] 

基　　金：This work was supported by the National Natural Science Foundation of China(Grant No.60576064) the Developing Foundation of Shanghai Science and Technology(Grant No.0452nm056) the National Basic Research Program of China(Grant No.2006CB300406) 

主　　题：multi-channel, carbon nanotubes, field-effect transistors, directed alignment, transconductance. 

摘      要：Single-wall carbon nanotubes (SWNTs) pre-decorated with functional molecules are directly aligned in the AC electric field, which makes SWNTs parallelly bridge the source and drain electrodes and act as the multiple conduction channels of the field-effect transistor (FET). The method avoids the mutual tanglement of SWNTs and makes them align between the source and drain electrodes abreast and dispersedly. It is indicated that aligning SWNTs in the high-volatility solvents can decrease the contaminant around the electrodes and has a function to purify the raw SWNTs. The obtained multi-channel FET not only takes on a high transconductance, but also holds the good reliability and stability.