Modeling electric field of power metal-oxide-semiconductor field-effect transistor with dielectric trench based on Schwarz–Christoffel transformation

作     者：汪志刚 廖涛 王亚南 Zhi-Gang Wang;Tao Liao;Ya-Nan Wang

作者机构：School of Information Science and Technology Southwest Jiao Tong University 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2019年第28卷第5期

页      面：366-373页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0704[理学-天文学] 

基　　金：Project supported by the National Natural Science Foundation of China(Grant No.61404110) the National Higher-education Institution General Research and Development Project,China(Grant No.2682014CX097) 

主　　题：conformal mapping Schwarz–Christoffel transformation electric field trench metal-oxidesemiconductor field-effect transistor (MOSFET) breakdown voltage 

摘      要：A power metal-oxide-semiconductor field-effect transistor(MOSFET) with dielectric trench is investigated to enhance the reversed blocking capability. The dielectric trench with a low permittivity to reduce the electric field at reversed blocking state has been studied. To analyze the electric field, the drift region is segmented into four regions, where the conformal mapping method based on Schwarz–Christoffel transformation has been applied. According to the analysis, the improvement in the electric field for using the low permittivity trench is mainly due to the two electric field peaks generated in the drift region around this dielectric trench. The analytical results of the electric field and the potential models are in good agreement with the simulation results.