检索结果-南通市图书馆

High Voltage 2023年第6期8卷 1264-1274页

作者： Xiaotong Zhang Zhuolin Cheng Xing Sun Kangning Wu Jianying Li State Key Laboratory of Electrical Insulation and Power Equipment Xi'an Jiaotong UniversityXi'anChina

The direct bonding copper(DBC)substrates of insulated gate bipolar transistor(IGBT)modules degrade inevitably under cycling thermo‐mechanical stress,causing potential threat to the reliability of IGBT modules.However,little attention has been paid to monitoring their degradation.This paper proposes a DBC degradation monitoring method for IGBT modules,which combines boundary‐dependent thermal network and feedback control.A thermal network is employed to describe the internal material degradation of IGBT modules and can be extracted from a finite‐element method model.The boundary conditions including power losses and DBC degradation are considered,enabling the thermal network suitable for various working conditions and different DBC degradation conditions of IGBT modules.The DBC degradation is characterised by its equivalent thermal conductivities measured in the thermal cycling ageing experiments.On the basis of the boundary‐dependent thermal network,feedback control is applied to monitor DBC degradation by regulating boundary‐dependent thermal impedances.Finally,the proposed model is verified from the effectiveness and accuracy of DBC degradation monitoring and junction temperature calculation.This method casts new light on thermal network modelling and could provide a feasible method for the monitoring of DBC degradation.

关键词： network bipolar transistor

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

人工道德基础器件:模拟道德逻辑的晶体管

Science China Materials 2024年第2期67卷 608-618页

作者：陈绍敏俞礽坚邹浥于希鹏刘常飞胡袁源郭太良陈惠鹏 Institute of Optoelectronic Display National&Local United Engineering Lab of Flat Panel Display TechnologyFuzhou UniversityFuzhou 350002China Department of Information Engineering Zhicheng CollegeFuzhou UniversityFuzhou 350002China Fujian Science&Technology Innovation Laboratory for Optoelectronic Information of China Fuzhou 350100China College of Semiconductors(College of Integrated Circuits) Hunan UniversityChangsha 410082China

日益先进的人工智能在生活中的广泛应用,促进了人工道德问题的产生.机器人的人工伦理的建立和实施通常是通过被动程序指令解决的,而在硬件层面的主动实现仍然具有挑战性.在这里,受认知心理学和神经生理学的启发,我们展示了一种典型的人... 详细信息

日益先进的人工智能在生活中的广泛应用,促进了人工道德问题的产生.机器人的人工伦理的建立和实施通常是通过被动程序指令解决的,而在硬件层面的主动实现仍然具有挑战性.在这里,受认知心理学和神经生理学的启发,我们展示了一种典型的人工道德器件.通过判断善恶和解决道德困境,器件实现了机器人三定律中的第一定律.器件展示了自我、本我和超我三种状态,以及绝对命令、本能漠视、本能冲动、道德义务论、功利主义和利己主义等六种人性.道德的起源在电子学方面得到了揭示,这是潜意识和意识之间的对抗性协作.这项工作为未来人工智能的意识产生和道德形成提供了一条可行的道路.

关键词： artificial morality neuromorphic device transistor three laws of robotics subconsciousness

Effective passivation of black phosphorus transistor against ambient degradation by an ultra-thin tin oxide film

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Science Bulletin 2019年第9期64卷 570-574页

作者： Dianzhong Wu Zhijian Peng Chuanhong Jin Zhiyong Zhang School of Engineering and Technology China University of Geosciences Hunan Institute of Advanced Sensing and Information Technology Xiangtan University

Recently, two-dimensional (2D) layered semiconducting materials have been considered as promising channel materials to construct aggressively-scaled transistors owing to their excellent electrostatics and remained hig... 详细信息

关键词： BP SnO FET Effective passivation of black phosphorus transistor against ambient degradation by an ultra-thin tin oxide film

Direct nanoscopic observation of plasma waves in the channel of a graphene field-effect transistor

在线全文

学校读者我要写书评

暂无评论

Light(Science & Applications) 2020年第1期9卷 1079-1085页

作者： Amin Soltani Frederik Kuschewski Marlene Bonmann Andrey Generalov Andrei Vorobiev Florian Ludwig Matthias M.Wiecha Dovile Cibiraite Frederik Walla Stephan Winnerl Susanne C.Kehr Lukas M.Eng Jan Stake Hartmut G.Roskos Physikalisches Institut Johann Wolfgang Goethe-UniversitatMax-von-Laue-Str.1D-60438 Frankfurt am MainGermany Institut für Angewandte Physik Technische Universitat DresdenNöthnitzer Str.61D-01187 DresdenGermany Department of Microtechnology and Nanoscience Chalmers University of TechnologySE-41296 GothenburgSweden Institute of Ion Beam Physics and Materials Research Helmholtz-Zentrum Dresden-RossendorfBautzner Landstraße 400D-01328 DresdenGermany Complexity and Topology in Quantum Matter(CT.QMAT) Cluster of Excellence EXC 2147Dresden/WurzburgGermany Department of Electronics and Nanoengineering Aalto UniversityTietotie 302150EspooFinland

Plasma waves play an important role in many solid-state phenomena and devices.They also become significant in electronic device structures as the operation frequencies of these devices increase.A prominent example is field-effect transistors(FETs),that witness increased attention for application as rectifying detectors and mixers of electromagnetic waves at gigahertz and terahertz frequencies,where they exhibit very good sensitivity even high above the cut-off frequency defined by the carrier transit time.Transport theory predicts that the coupling of radiation at THz frequencies into the channel of an antenna-coupled FET leads to the development of a gated plasma wave,collectively involving the charge carriers of both the two-dimensional electron gas and the gate electrode.In this paper,we present the first direct visualization of these waves.Employing graphene FETs containing a buried gate electrode,we utilize near-field THz nanoscopy at room temperature to directly probe the envelope function of the electric field amplitude on the exposed graphene sheet and the neighboring antenna regions.Mapping of the field distribution documents that wave injection is unidirectional from the source side since the oscillating electrical potentials on the gate and drain are equalized by capacitive shunting.The plasma waves,excited at 2 THz,are overdamped,and their decay time lies in the range of 25-70 fs.Despite this short decay time,the decay length is rather long,i.e.,0.3-0.5μm,because of the rather large propagation speed of the plasma waves,which is found to lie in the range of 3.5-7×10^(6)m/s,in good agreement with theory.The propagation speed depends only weakly on the gate voltage swing and is consistent with the theoretically predicted 1/4 power law.

关键词： antenna channel transistor

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

InGaZnO薄膜晶体管泄漏电流模型

物理学报 2019年第5期68卷 219-225页

作者：邓小庆邓联文何伊妮廖聪维黄生祥罗衡中南大学物理与电子学院长沙410083 湖南省新型片式电感及先进制造装备工程技术研究中心怀化419600

研究了非晶氧化锌镓铟薄膜晶体管(amorphous InGaZnO thin-film transistor,InGaZnO TFT)的泄漏电流模型.基于Poole-Frenkel热发射效应和热离子场致发射效应的泄漏电流产生机制,分别得到了高电场和低电场条件下的载流子产生-复合率.在... 详细信息

研究了非晶氧化锌镓铟薄膜晶体管(amorphous InGaZnO thin-film transistor,InGaZnO TFT)的泄漏电流模型.基于Poole-Frenkel热发射效应和热离子场致发射效应的泄漏电流产生机制,分别得到了高电场和低电场条件下的载流子产生-复合率.在此基础上推导得到了InGaZnO TFT的分段式泄漏电流-电压数学模型,并利用平滑函数得到了关断区和亚阈区连续统一的泄漏电流模型.所提出的泄漏电流模型的计算值和TCAD模拟值与实验结果较为吻合.利用所提出的InGaZnO TFT泄漏电流模型和TCAD模拟,讨论了InGaZnO TFT不同的沟道宽度、沟道长度和栅介质层厚度对泄漏电流值的影响.研究结果对InGaZnO TFT集成传感电路的设计具有一定参考价值.

关键词： InGaZnO 泄漏电流 thin-film transistor 器件模型

Overview of recent progress in condition monitoring for insulated gate bipolar transistor modules:Detection,estimation,and prediction

在线全文

学校读者我要写书评

暂无评论

High Voltage 2021年第6期6卷 967-977页

作者： Meng Huang Haoran Wang Liangjun Bai Kang Li Ju Bai Xiaoming Zha School of Electrical Engineering and Automation Wuhan UniversityWuhanChina Energy Department Aalborg UniversityAalborgDenmark

The insulated gate bipolar transistor(IGBT)is one of the most fragile components in power electronics converters.In order to improve the reliability of IGBTs,various measurements are taken according to the condition monitoring(CM)technique.Traditional CM techniques include the measurement and estimation of the device operation conditions.Recently,emerging techniques have been developed,not only for the detection and estimation but also for the prognostics of IGBTs with the condition data.In this paper,a review is performed on the recent progress in the CM techniques for IGBTs.First,some emerging electrical and thermal measurements are reviewed.Based on the sensed data,the health indicator estimation techniques are summarised.Moreover,for the emerging prognostics and health management applications,some remaining using lifetime(RUL)prediction methods are reviewed.Finally,the research gaps and directions are discussed for the CM in IGBT applications.

关键词： bipolar transistor estimation

Optimization of ambipolar current and analog/RF performance for T-shaped tunnel field-effect transistor with gate dielectric spacer

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Chinese Physics B 2019年第1期28卷 656-662页

作者：韩茹张海潮王党辉李翠 School of Computer Science and Engineering Northwestern Polytechnical University

A new T-shaped tunnel field-effect transistor(TTFET) with gate dielectric spacer(GDS) structure is proposed in this paper. To further studied the effects of GDS structure on the TTFET, detailed device characteristics such as current-voltage relationships, energy band diagrams, band-to-band tunneling(BTBT) rate and the magnitude of the electric field are investigated by using TCAD simulation. It is found that compared with conventional TTFET and TTFET with gate-drain overlap(GDO) structure, GDS-TTFET not only has the minimum ambipolar current but also can suppress the ambipolar current under a more extensive bias range. Furthermore, the analog/RF performances of GDS-TTFET are also investigated in terms of transconductance, gate-source capacitance, gate-drain capacitance, cutoff frequency, and gain bandwidth production. By inserting a low-κ spacer layer between the gate electrode and the gate dielectric, the GDS structure can effectively reduce parasitic capacitances between the gate and the source/drain, which leads to better performance in term of cutoff frequency and gain bandwidth production. Finally, the thickness of the gate dielectric spacer is optimized for better ambipolar current suppression and improved analog/RF performance.

关键词： tunneling field effect transistor T-shaped tunnel field-effect transistor gate dielectric spacer ambipolar current analog/RF performance

Synaptic transistor with multiple biological functions based on metal-organic frameworks combined with the LIF model of a spiking neural network to recognize temporal information

在线全文

学校读者我要写书评

暂无评论

Microsystems & Nanoengineering 2023年第4期9卷 107-118页

作者： Qinan Wang Chun Zhao Yi Sun Rongxuan Xu Chenran Li Chengbo Wang Wen Liu Jiangmin Gu Yingli Shi Li Yang Xin Tu Hao Gao Zhen Wen School of Advanced Technology Xi’an Jiaotong-Liverpool UniversitySuzhou 215123P.R.China Department of Electrical Engineering and Electronics University of LiverpoolLiverpool L693GJUK School of Science Xi’an Jiaotong-Liverpool UniversitySuzhou 215123P.R.China Department of Electrical Engineering Eindhoven University of TechnologyDen Dolech 25612 AZ EindhovenThe Netherlands Institute of Functional Nano and Soft Materials(FUNSOM) Joint International Research Laboratory of Carbon-Based Functional Materials and DevicesSoochow UniversitySuzhou 215123P.R.China

Spiking neural networks(SNNs)have immense potential due to their utilization of synaptic plasticity and ability to take advantage of temporal correlation and low power consumption.The leaky integration and firing(LIF)model and spike-timing-dependent plasticity(STDP)are the fundamental components of SNNs.Here,a neural device is first demonstrated by zeolitic imidazolate frameworks(ZIFs)as an essential part of the synaptic transistor to simulate SNNs.Significantly,three kinds of typical functions between neurons,the memory function achieved through the hippocampus,synaptic weight regulation and membrane potential triggered by ion migration,are effectively described through short-term memory/long-term memory(STM/LTM),long-term depression/long-term potentiation(LTD/LTP)and LIF,respectively.Furthermore,the update rule of iteration weight in the backpropagation based on the time interval between presynaptic and postsynaptic pulses is extracted and fitted from the STDP.In addition,the postsynaptic currents of the channel directly connect to the very large scale integration(VLSI)implementation of the LIF mode that can convert high-frequency information into spare pulses based on the threshold of membrane potential.The leaky integrator block,firing/detector block and frequency adaptation block instantaneously release the accumulated voltage to form pulses.Finally,we recode the steadystate visual evoked potentials(SSVEPs)belonging to the electroencephalogram(EEG)with filter characteristics of LIF.SNNs deeply fused by synaptic transistors are designed to recognize the 40 different frequencies of EEG and improve accuracy to 95.1%.This work represents an advanced contribution to brain-like chips and promotes the systematization and diversification of artificial intelligence.

关键词： transistor network neural

High-Performance Photo-Modulated Thin-Film transistor Based on Quantum dots/Reduced Graphene Oxide Fragment-Decorated ZnO Nanowires

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Nano-Micro Letters 2016年第3期8卷 247-253页

作者： Zhi Tao Yi-an Huang Xiang Liu Jing Chen Wei Lei Xiaofeng Wang Lingfeng Pan Jiangyong Pan Qianqian Huang Zichen Zhang School of Electronic Science and Engineering Southeast University State Key Laboratory of Precision Measurement Technology and Instruments Collaborative Innovation Center for Micro/Nano Fabrication Device and System Department of Precision Instrument Tsinghua University School of Information and Communication Engineering Beijing University of Posts and Telecommunications Institute of Semiconductors Chinese Academy of Science

In this paper, a photo-modulated transistor based on the thin-film transistor structure was fabricated on the flexible substrate by spin-coating and magnetron sputtering. A novel hybrid material that composed of Cd Se quantum dots and reduced graphene oxide(RGO) fragment-decorated ZnO nanowires was synthesized to overcome the narrow optical sensitive waveband and enhance the photo-responsivity. Due to the enrichment of the interface and heterostructure by RGO fragments being utilized, the photo-responsivity of the transistor was improved to 2000 AW^(-1) and the photo-sensitive wavelength was extended from ultraviolet to visible. In addition, a positive back-gate voltage was employed to reduce the Schottky barrier width of RGO fragments and ZnO nanowires. As a result, the amount of carriers was increased by 10 folds via the modulation of back-gate voltage. With these inherent properties, such as integrated circuit capability and wide optical sensitive waveband, the transistor will manifest great potential in the future applications in photodetectors.

关键词： Thin-film transistor Quantum dots Reduced graphene oxide ZnO nanowires

Organic permeable base light-emitting transistor:a new concept device architecture for display technology

在线全文

学校读者我要写书评

暂无评论

Science China Chemistry 2021年第8期64卷 1261-1262页

作者： Haikuo Gao Zhagen Miao Huanli Dong Beijing National Laboratory for Molecular Sciences Key Laboratory of Organic SolidsInstitute of ChemistryChinese Academy of SciencesBeijing100190China University of Chinese Academy of Sciences Beijing100049China

As an important part of the information industry,display technology has been playing a very important role in the development of information technology.Due to the obvious advantages in thickness,color gamut,view angle and contrast ratio,organic light-emitting diodes(OLEDs)are recognized as one of the most important display technologies and have been successfully commercialized in mobile phones and TVs.

关键词： transistor emitting diodes